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UNR4223(UN4223) [ETC]

複合デバイス - 抵抗内蔵型トランジスタ ;
UNR4223(UN4223)
型号: UNR4223(UN4223)
厂家: ETC    ETC
描述:

複合デバイス - 抵抗内蔵型トランジスタ

文件: 总6页 (文件大小:255K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

UNR4223|UN4223

Composite Device - Transistors with built-in Resistor

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ETC

UNR4224

Silicon NPN epitaxial planar type

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PANASONIC

UNR4224(UN4224)

複合デバイス - 抵抗内蔵型トランジスタ

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ETC

UNR4224|UN4224

Composite Device - Transistors with built-in Resistor

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ETC

UNR5110

Silicon PNP epitaxial planar type

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PANASONIC

UNR5110(UN5110)

Composite Device - Transistors with built-in Resistor

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ETC

UNR5110G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

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PANASONIC

UNR5110GS

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

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PANASONIC

UNR5110Q

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70

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ETC

UNR5110R

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70

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ETC

UNR5110S

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70

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ETC

UNR5110|UN5110

Composite Device - Transistors with built-in Resistor

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ETC

UNR5111

Silicon PNP epitaxial planar type

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PANASONIC

UNR5111(UN5111)

Composite Device - Transistors with built-in Resistor

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ETC

UNR5111G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

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PANASONIC

UNR5111GQ

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

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PANASONIC

UNR5111GR

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

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PANASONIC

UNR5111Q

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3-G1, SC-70, 3 PIN

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PANASONIC

UNR5111R

暂无描述

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PANASONIC

UNR5111S

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SMINI3-G1, SC-70, 3 PIN

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PANASONIC