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UT54ACTS244

更新时间：2024-09-18 12:07:26
品牌：ETC
描述：Radiation-Hardened Octal Buffers & Line Drivers, Three-State Outputs

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UT54ACTS244 概述

Radiation-Hardened Octal Buffers & Line Drivers, Three-State Outputs 抗辐射八路缓冲器和线路驱动器，三态输出

UT54ACTS244 数据手册

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UT54ACS244/UT54ACTS244  
Radiation-Hardened  
Octal Buffers & Line Drivers, Three-State Outputs  
FEATURES  
PINOUTS  
20-Pin DIP  
Top View  
Three-state outputs drive bus lines or buffer memory address  
registers  
radiation-hardened CMOS  
- Latchup immune  
High speed  
1
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
1G  
1A1  
2Y4  
1A2  
2Y3  
VDD  
2G  
2
3
1Y1  
2A4  
1Y2  
Low power consumption  
4
Single 5 volt supply  
Available QML Q or V processes  
Flexible package  
- 20-pin DIP  
- 20-lead flatpack  
5
6
1A3  
2Y2  
2A3  
1Y3  
7
8
1A4  
2Y1  
VSS  
2A2  
1Y4  
2A1  
9
DESCRIPTION  
10  
The UT54ACS244 and the UT54ACTS244 are non-inverting  
octal buffer and line drivers which improve the performance and  
density of three-state memory address drivers, clock drivers,  
and bus-oriented receivers and transmitters.  
20-Lead Flatpack  
Top View  
1
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
1G  
VDD  
The devices are characterized over full military temperature  
range of -55 C to +125 C.  
2
1A1  
2Y4  
1A2  
2Y3  
1A3  
2Y2  
1A4  
2Y1  
VSS  
2G  
3
1Y1  
2A4  
1Y2  
2A3  
1Y3  
2A2  
1Y4  
2A1  
FUNCTION TABLE  
4
INPUTS  
OUTPUT  
5
6
1G, 2G  
A
L
Y
L
7
L
L
8
H
X
H
Z
9
H
10  
LOGIC SYMBOL  
(1)  
1G  
EN  
(2)  
(18)  
1Y1  
(16)  
1Y2  
(14)  
1Y3  
(12)  
1A1  
(4)  
1A2  
(6)  
1A3  
(8)  
1A4  
1Y4  
(19)  
2G  
EN  
(11)  
2A1  
(9)  
2Y1  
(7)  
(13)  
2A2  
2Y2  
(5)  
(15)  
2A3  
2Y3  
(3)  
(17)  
2A4  
2Y4  
Note:  
1. Logic symbol in accordance with ANSI/IEEE Std 91-1984 and IEC  
Publication 617-12.  
159  
RadHard MSI Logic  
UT54ACS244/UT54ACTS244  
LOGIC DIAGRAM  
(1)  
(2)  
(19)  
(11)  
1G  
2G  
2A1  
2A2  
2A3  
2A4  
(18)  
(16)  
(14)  
(12)  
(9)  
1A1  
1A2  
1A3  
1A4  
1Y1  
1Y2  
1Y3  
1Y4  
2Y1  
(4)  
(6)  
(8)  
(13)  
(15)  
(17)  
(7)  
2Y2  
(5)  
2Y3  
(3)  
2Y4  
1
RADIATION HARDNESS SPECIFICATIONS  
PARAMETER  
LIMIT  
1.0E6  
80  
UNITS  
Total Dose  
rads(Si)  
2
2
SEU Threshold  
MeV-cm /mg  
2
SEL Threshold  
120  
MeV-cm /mg  
2
Neutron Fluence  
1.0E14  
n/cm  
Notes:  
1. Logic will not latchup during radiation exposure within the limits defined in the table  
2. Device storage elements are immune to SEU affects.  
ABSOLUTE MAXIMUM RATINGS  
SYMBOL  
PARAMETER  
Supply voltage  
LIMIT  
UNITS  
V
V
-0.3 to 7.0  
DD  
V
Voltage any pin  
-.3 to V +.3  
V
I/O  
DD  
T
Storage Temperature range  
Maximum junction temperature  
Lead temperature (soldering 5 seconds)  
Thermal resistance junction to case  
DC input current  
-65 to +150  
C
STG  
T
+175  
+300  
20  
C
J
T
C
LS  
JC  
C/W  
mA  
W
I
10  
I
P
Maximum power dissipation  
1
D
Note:  
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device  
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for  
extended periods may affect device reliability.  
RadHard MSI Logic  
160  
UT54ACS244/UT54ACTS244  
RECOMMENDED OPERATING CONDITIONS  
SYMBOL  
PARAMETER  
LIMIT  
UNITS  
V
Supply voltage  
Input voltage any pin  
Temperature range  
4.5 to 5.5  
V
V
C
DD  
V
0 to V  
DD  
IN  
T
-55 to + 125  
C
161  
RadHard MSI Logic  
UT54ACS244/UT54ACTS244  
7
DC ELECTRICAL CHARACTERISTICS  
6
(V = 5.0V 10%; V = 0V , -55 C < T < +125 C)  
DD  
SS  
C
SYMBOL  
PARAMETER  
CONDITION  
MIN  
MAX  
UNIT  
1
V
IL  
IH  
IN  
Low-level input voltage  
ACTS  
ACS  
0.8  
V
.3V  
DD  
1
V
High-level input voltage  
ACTS  
ACS  
.5V  
.7V  
V
DD  
DD  
I
Input leakage current  
ACTS/ACS  
1
A
V
V
= V or V  
-1  
IN  
DD  
SS  
3
V
OL  
Low-level output voltage  
0.40  
0.25  
I
I
= 12.0mA  
= 100 A  
OL  
OL  
ACTS  
ACS  
3
V
OH  
High-level output voltage  
.7V  
V
I
I
= -12.0mA  
= -100 A  
DD  
OH  
OH  
ACTS  
ACS  
V
- 0.25  
DD  
10  
I
V
V
= V or V  
12  
mA  
OL  
Output current  
IN  
DD  
SS  
SS  
= 0.4V  
(Sink)  
OL  
10  
I
V
V
= V or V  
-12  
mA  
OH  
IN  
DD  
Output current  
= V - 0.4V  
(Source)  
OH  
DD  
I
I
Three-state output leakage current  
V = V and V  
-30  
30  
A
OZ  
O
DD  
SS  
2 ,4  
OS  
Short-circuit output current  
-300  
300  
2.0  
mA  
V = V and V  
O
DD  
SS  
ACTS/ACS  
2,8,9  
P
C = 50pF  
mW/  
MHz  
total  
Power dissipation  
L
I
Quiescent Supply Current  
V
= 5.5V  
DD  
10  
A
DDQ  
I
Quiescent Supply Current Delta  
ACTS  
1.6  
mA  
DDQ  
For input under test  
= V - 2.1V  
V
IN  
DD  
For all other inputs  
V
V
= V or V  
SS  
IN  
DD  
= 5.5V  
DD  
5
C
= 1MHz @ 0V  
= 1MHz @ 0V  
15  
15  
pF  
pF  
IN  
Input capacitance  
5
C
OUT  
Output capacitance  
RadHard MSI Logic  
162  
UT54ACS244/UT54ACTS244  
Notes:  
1. Functional tests are conducted in accordance with MIL-STD-883 with the following input test conditions: VIH = VIH(min) + 20%, - 0%; VIL = VIL(max) + 0%,  
- 50%, as specified herein, for TTL, CMOS, or Schmitt compatible inputs. Devices may be tested using any input voltage within the above specified range, but  
are guaranteed to VIH(min) and VIL(max).  
2. Supplied as a design limit but not guaranteed or tested.  
3. Per MIL-PRF-38535, for current density 5.0E5 amps/cm2, the maximum product of load capacitance (per output buffer) times frequency should not exceed  
3,765 pF/MHz.  
4. Not more than one output may be shorted at a time for maximum duration of one second.  
5. Capacitance measured for initial qualification and when design changes may affect the value. Capacitance is measured between the designated terminal and VSS  
at frequency of 1MHz and a signal amplitude of 50mV rms maximum.  
6. Maximum allowable relative shift equals 50mV.  
7. All specifications valid for radiation dose 1E6 rads(Si).  
8. Power does not include power contribution of any TTL output sink current.  
9. Power dissipation specified per switching output.  
10. This value is guaranteed based on characterization data, but not tested.  
163  
RadHard MSI Logic  
UT54ACS244/UT54ACTS244  
2
AC ELECTRICAL CHARACTERISTICS  
1
(V = 5.0V 10%; V = 0V , -55 C < T < +125 C)  
DD  
SS  
C
SYMBOL  
PARAMETER  
MINIMUM  
MAXIMUM  
UNIT  
t
t
Input to Yn  
1
11  
ns  
PLH  
PHL  
Input to Yn  
1
2
2
2
2
11  
12  
12  
12  
12  
ns  
ns  
ns  
ns  
ns  
t
G low to Yn active  
G low to Yn active  
PZL  
PZH  
t
t
G high to Yn three-state  
G high to Yn three-state  
PLZ  
PHZ  
t
Notes:  
1. Maximum allowable relative shift equals 50mV.  
2. All specifications valid for radiation dose 1E6 rads(Si).  
RadHard MSI Logic  
164  

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