select brandShort,logo,brand from pdf_brand where id=2 limit 1 VI101_技术文档

VI101 [ETC]

Analog IC ; 模拟IC\n

VI101


型号：	VI101
厂家：	ETC
描述：	Analog IC 模拟IC\n 模拟IC
文件：	总2页 (文件大小：142K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

VI10150C

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

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VISHAY

VI10150C-E3-4W

High-Voltage Trench MOS Barrier Schottky Rectifier

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VISHAY

VI10150C-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A

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VISHAY

VI10150C-M3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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VISHAY

VI10150C-M3/4W

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 150V V(RRM), Silicon, TO-262AA,

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VISHAY

VI10150CHM3-4W

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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VISHAY

VI10150CHM3/4W

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 150V V(RRM), Silicon, TO-262AA,

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VISHAY

VI10150S

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

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VISHAY

VI10150S-E3/4W

High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

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VISHAY

VI10150S-M3/4W

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 150V V(RRM), Silicon, TO-262AA,

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VISHAY

VI10150SG-M3-4W

High-Voltage Trench MOS Barrier Schottky Rectifier

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VISHAY

VI10150SG-M3/4W

DIODE 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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VISHAY

VI10150SGHM3-4W

High-Voltage Trench MOS Barrier Schottky Rectifier

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VISHAY

VI10150SGHM3/4W

DIODE 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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VISHAY

VI10150SHM3/4W

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 150V V(RRM), Silicon, TO-262AA,

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VISHAY

VI102

Analog IC

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ETC

VI10210000J0G

Barrier Strip Terminal Block

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AMPHENOL

VI10210200J0G

Barrier Strip Terminal Block

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AMPHENOL

VI10210300J0G

Barrier Strip Terminal Block

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AMPHENOL

VI10210500J0G

Barrier Strip Terminal Block

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AMPHENOL

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