VN222LL [ETC]
Obsolete ; 过时的\n
| 型号： | VN222LL |
| 厂家： | 
ETC |
| 描述： | Obsolete
|
| 文件： | 总1页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-CHANNEL ENHANCEMENT
VN2222LL
MODE VERTICAL DMOS FET
ISSUE 2 – FEB 94
S
G
D
TO92
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
UNIT
V
Drain-Source Voltage
60
150
Continuous Drain Current at Tam b = 25°C
Pulsed Drain Current
ID
m A
A
IDM
1
Gate Source Voltage
VGS
V
± 40
Power Dissipation at Tam b = 25°C
Operating and Storage Tem perature Range
Ptot
400
m W
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherw ise stated).
am b
PARAMETER
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
Drain-Source
BVDSS
60
ID=100µA, VGS=0V
Breakdown Voltage
Gate-Source Breakdown
Voltage
VGS(th)
0.6
2.5
V
ID=1m A, VDS= VGS
Gate Body Leakage
IGSS
IDSS
100
nA
V
GS=± 30V, VDS=0V
Zero Gate Voltage Drain
Current (1)
10
500
VDS=48 V, VGS=0V
VDS=48 V, VGS=0V, T=125°C
µA
µA
On State Drain Current(1) ID(on)
750
100
m A
VDS=10 V, VGS=10V
VGS=10V,ID=500m A
Static Drain Source On
State Voltage (1)
VDS(on)
RDS(on)
gfs
3.75
1.50
V
V
VGS=5V, ID=200m A
Static Drain Source On
State Resistance (1)
7.5
VGS=10V,ID=500m A
Ω
Forward
m S
VDS=10V,ID=500m A
Transconductance (1)(2)
Input Capacitance (2)
Ciss
60
25
pF
pF
Comm on Source Output Coss
Capacitance (2)
VDS=25 V, VGS=0V
f=1MHz
Reverse Transfer
Capacitance (2)
Crss
5
pF
Turn-On Tim e (2)(3)
Turn-Off Tim e (2)(3)
t(on)
t(off)
10
10
ns
ns
VDD≈15V, ID=600m A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%, (2) Sam ple test.
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator
3-91
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