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VTA1111 [ETC]

PHOTOTRANSISTOR | DARLINGTON | 825NM PEAK WAVELENGTH | 200M | CAN-4.6 ; 光电晶体管|达林顿| 825NM峰值波长| 200M | CAN- 4.6\n

VTA1111


元器件型号：	VTA1111
生产厂家：	ETC
描述和应用：	PHOTOTRANSISTOR \| DARLINGTON \| 825NM PEAK WAVELENGTH \| 200M \| CAN-4.6 光电晶体管\|达林顿\| 825NM峰值波长\| 200M \| CAN- 4.6\n 晶体光电晶体管光电晶体管
PDF文件：	总1页 (文件大小：52K)
下载文档：	下载PDF数据表文档文件
型号参数：VTA1111参数

VTA1112

PHOTOTRANSISTOR | DARLINGTON | 825NM PEAK WAVELENGTH | 200M | CAN-4.6

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6 ETC

VTA2

VTA2 Miniature TCXOs

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16 VECTRON

VTA200

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 12.5A, 200V V(RRM), Silicon,

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0 MICROSEMI

VTA200/S

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 12.5A, 200V V(RRM), Silicon,

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0 MICROSEMI

VTA200/T

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 12.5A, 200V V(RRM), Silicon

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0 MICROSEMI

VTA301-01F

VALVE VTA BODY PORTED

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20 ETC

VTA301-02F

VALVE VTA BODY PORTED

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22 ETC

VTA325-03F

VALVE VTA BODY PORTED

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30 ETC

VTA400

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 12.5A, 400V V(RRM), Silicon,

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0 MICROSEMI

VTA400/S

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 12.5A, 400V V(RRM), Silicon,

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0 MICROSEMI

VTA400/T

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 12.5A, 400V V(RRM), Silicon,

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0 MICROSEMI

VTA52

Bulk Metal® Foil Technology Tubular Axial-Lead Resistors, Meets or Exceed MIL-R-39005 Requirements

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17 VISHAY

VTA53

Bulk Metal® Foil Technology Tubular Axial-Lead Resistors, Meets or Exceed MIL-R-39005 Requirements

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8 VISHAY

VTA54

Bulk Metal® Foil Technology Tubular Axial-Lead Resistors, Meets or Exceed MIL-R-39005 Requirements

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11 VISHAY

VTA55

Bulk Metal® Foil Technology Tubular Axial-Lead Resistors, Meets or Exceed MIL-R-39005 Requirements

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17 VISHAY

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