WD3LE01GX809V [ETC]

DDR3 240-Pin Registered-ECC DIMMs;


型号：	WD3LE01GX809V
厂家：	ETC
描述：	DDR3 240-Pin Registered-ECC DIMMs 双倍数据速率
文件：	总3页 (文件大小：97K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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> Embedded OEM > DRAM > DDR3

DRAM

DRAM DDR3

RDIMM

DDR3

DDR2

DDR

SDR

RDIMM

UDIMM

SODIMM

mini DIMM

Speciality

Flash

DDR3 is the current mainstream dram technology

standardized by JEDEC, bringing further improvements

in power consumption and increased bandwidth over

DDR2. Available in power supply voltages of 1.5V

(DDR3) and 1.35V (DDR3L) and with transfer data

rates from 800Mb/s to 1.6Gb/s and beyond, DDR3 has

become the de facto mainstream memory technology

especially for server and notebook applications in the

SSD

ADD2

Modems

1H of 2010. Many other applications are available in the

market today to take advantage of the superior

performance features of DDR3 and DDR3L. Wintec

currently offers following DDR3 and DDR3L Modules

and will continue to add more solutions as

DDR3/DDR3L enabled applications will proliferate.

DDR3 240-Pin Registered-ECC DIMMs

Standard Profile (1.181”) with Nominal Voltage (1.5V)

DIMM

Component

Config

Density

1GB

Part Number

Rank

Voltage

1.5V

Config

WD3RE01GX809-xxxxx-yyz

1 rank

128x72

128Mx8

WD3RE02GX818-xxxxx-yyz

WD3RE02GX809-xxxxx-yyz

WD3RE02GX418-xxxxx-yyz

WD3RE04GX418-xxxxx-yyz

WD3RE04GX818-xxxxx-yyz

WD3RE04GX436-xxxxx-yyz

WD3RE08GX436-xxxxx-yyz

WD3RE08GX836-xxxxx-yyz

2 rank

1 rank

2 rank

4 rank

256x72

512x72

1024x72

128Mx8

256Mx8

256Mx4

512Mx4

256Mx8

256Mx4

512Mx4

256Mx8

1.5V

2GB

4GB

8GB

Wintec Industries – OEM Embedded Design Center

WD3RE08GX418-xxxxx-yyz

1 rank

1024x72

1024Mx4

1.5V

Very Low Profile (0.72”) with Nominal Voltage (1.5V)

DIMM

Component

Config

Density

1GB

Part Number

Rank

Voltage

1.5V

Config

WD3RE01GX809V-xxxxx-yyz

1 rank

128x72

128Mx8

WD3RE02GX818V-xxxxx-yyz

WD3RE02GX809V-xxxxx-yyz

WD3RE02GX418V-xxxxx-yyz

WD3RE04GX418V-xxxxx-yyz

WD3RE04GX818V-xxxxx-yyz

2 rank

1 rank

2 rank

256x72

512x72

128Mx8

256Mx8

256Mx4

512Mx4

256Mx8

1.5V

2GB

4GB

8GB

WD3RE08GX418V-xxxxx-yyz

1 rank

1024x72

1024Mx4

1.5V

Standard Profile (1.181”) with Low Voltage (1.35V)

DIMM

Component

Config

Density

1GB

Part Number

Rank

Voltage

1.35V

Config

WD3LE01GX809-xxxxx-yyz

1 rank

128x72

128Mx8

WD3LE02GX818-xxxxx-yyz

WD3LE02GX809-xxxxx-yyz

WD3LE02GX418-xxxxx-yyz

WD3LE04GX418-xxxxx-yyz

WD3LE04GX818-xxxxx-yyz

WD3LE04GX436-xxxxx-yyz

WD3LE08GX436-xxxxx-yyz

WD3LE08GX836-xxxxx-yyz

WD3LE08GX418-xxxxx-yyz

2 rank

1 rank

2 rank

4 rank

1 rank

256x72

512x72

1024x72

128Mx8

256Mx8

256Mx4

512Mx4

256Mx4

512Mx4

256Mx8

1024Mx4

1.35V

2GB

4GB

8GB

Very Low Profile (0.72”) with Low Voltage (1.35V)

DIMM

Component

Config

Density

1GB

Part Number

Rank

Voltage

1.35V

Config

WD3LE01GX809V-xxxxx-yyz

1 rank

128x72

128Mx8

WD3LE02GX818V-xxxxx-yyz

WD3LE02GX809V-xxxxx-yyz

WD3LE02GX418V-xxxxx-yyz

WD3LE04GX418V-xxxxx-yyz

2 rank

1 rank

2 rank

256x72

512x72

128Mx8

256Mx8

256Mx4

512Mx4

256Mx4

1.35V

2GB

4GB

8GB

WD3LE08GX418V-xxxxx-yyz

1 rank

1024x72

1024Mx4

1.35V

Wintec Industries – OEM Embedded Design Center

(xxxxx) Module speed (MHz) and Cas Latency

1066J : 1066MHz CL 7

1333L : 1333Mhz CL9

1600N :1600MHz CL11

DRAM Manufacturer and Die Revision

(yy) = P: Samsung

H: Micron

A: A-Die

B: B-Die

C: C-Die

C: Hynix

Buffer / Register set (Only applies to Registered/Buffered modules)

(z) =

I: Inphi

D: IDT

L: Intel

SITEMAP

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PRIVACY

WEBSITE FEEDBACK

http://www.wintecind.com/oem/DRAM/DDR3/RDIMM.html[4/20/2012 1:11:54 PM]

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