WF512K32-120G2UI5A [ETC]
x32 Flash EEPROM Module ; X32闪存EEPROM模块
| 型号： | WF512K32-120G2UI5A |
| 厂家： | 
ETC |
| 描述： | x32 Flash EEPROM Module
|
| 文件： | 总15页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WF512K32-XXX5
HI-RELIABILITY PRODUCT
512Kx32 5V FLASH MODULE, SMD 5962-94612
FEATURES
■ Access Times of 60, 70, 90, 120, 150ns
■ Organized as 512Kx32
■ Packaging
■ Commercial, Industrial and Military Temperature Ranges
■ 5 Volt Programming. 5V ±10% Supply.
• 66 pin, PGA Type, 1.075" square, Hermetic
Ceramic HIP (Package 400(1))
■ Low Power CMOS, 6.5mA Standby
• 68 lead, 40mm, Low Capacitance Hermetic CQFP
(Package 501)
■ Embedded Erase and Program Algorithms
■ TTL Compatible Inputs and CMOS Outputs
■ Built-in Decoupling Caps for Low Noise Operation
■ Page Program Operation and Internal Program Control Time
• 68 lead, 40mm, Low Profile 3.5mm (0.140"), CQFP
(Package 502)
• 68 lead, 22.4mm (0.880") Low Profile CQFP (G2U), 3.5mm
(0.140") high, (Package 510)
■ Weight
WF512K32-XG2UX5 - 8 grams typical
WF512K32-XH1X5 - 13 grams typical
WF512K32-XG4X5 - 20 grams typical
WF512K32-XG4TX5 - 20 grams typical
WF512K32-XG1UX5 - 5 grams typical
• 68 lead, 23.9mm (0.940") Low Profile CQFP (G1U), 3.5mm
(0.140") high, (Package 519)
■ 100,000 Erase/Program Cycles Minimum
■ Sector Architecture
• 8 equal size sectors of 64KBytes each
• Any combination of sectors can be concurrently erased.
Also supports full chip erase
1. Call factory for PGA type (HIP) package options.
Note: See Flash Programming Application Note 4M5 for algorithms.
FIG. 1 PIN CONFIGURATION FOR WF512K32N-XH1X5
PIN DESCRIPTION
TOP VIEW
1
12
23
34
45
56
I/O0-31 Data Inputs/Outputs
I/O
I/O
8
9
WE
2
I/O15
I/O14
I/O13
I/O12
OE
I/O24
I/O25
I/O26
V
CC
I/O31
I/O30
I/O29
I/O28
A0-18
WE1-4
CS1-4
OE
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
CS2
CS
4
I/O10
GND
I/O11
WE
4
A
A
A
A
A
14
16
11
0
A
7
I/O27
VCC
A
A
A
V
10
9
A12
A
A
4
5
6
3
3
A1
A2
A3
GND
NC
Not Connected
A
17
NC
15
CC
WE1
A13
A
BLOCK DIAGRAM
WE3 CS3
WE4 CS4
18
I/O
I/O
I/O
I/O
7
A
8
WE
CS
I/O23
I/O22
I/O21
I/O20
WE1 CS1
WE2 CS2
OE
A
0-18
I/O
I/O
I/O
0
1
2
CS
NC
I/O
1
6
I/O16
I/O17
I/O18
512K x 8
512K x 8
512K x 8
512K x 8
5
4
GND
I/O19
3
8
8
8
8
11
22
33
44
55
66
I/O16-23
I/O24-31
I/O0-7
I/O8-15
April 2001 Rev. 4
1
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF512K32-XXX5
FIG. 2 PIN CONFIGURATION FOR WF512K32F-XG4X5 (Low Capacitance)
AND WF512K32-XG4TX5
TOP VIEW
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-18
WE
Address Inputs
Write Enable
Chip Selects
Output Enable
Power Supply
Ground
9
8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
0
1
2
3
4
5
6
7
CS1-4
OE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
VCC
GND
NC
Not Connected
GND
I/O
I/O
8
9
BLOCK DIAGRAM
CS 2
CS 3
CS4
CS1
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
WE
OE
0-18
A
512K x 8
512K x 8
512K x 8
512K x 8
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
8
8
8
8
I/O16-23
I/O24-31
I/O0-7
I/O8-15
FIG. 3 PIN CONFIGURATION FOR WF512K32-XG2UX5 AND WF512K32-XG1UX5
TOP VIEW
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
9
8
7
6
5
4
3
2
1
68 67 66 65 64 63 62 61
60
A0-18
WE1-4
CS1-4
OE
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
0
1
2
3
4
5
6
7
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
VCC
GND
GND
I/O
I/O
8
9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
BLOCK DIAGRAM
WE
WE
WE
4 CS4
2 CS 2
WE3
1 CS 1
CS3
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
OE
0-18
A
512K x 8
512K x 8
512K x 8
512K x 8
8
8
8
8
I/O16-23
I/O24-31
I/O0-7
I/O8-15
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
2
WF512K32-XXX5
ABSOLUTE MAXIMUM RATINGS (1)
CAPACITANCE
(TA = +25°C)
Parameter
Unit
°C
V
Parameter
Symbol
Conditions
Max Unit
Operating Temperature
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
OE capacitance
COE
V
V
IN = 0 V, f = 1.0 MHz
IN = 0 V, f = 1.0 MHz
50
pF
pF
Supply Voltage Range (VCC)
WE1-4 capacitance
HIP (PGA)
CWE
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
V
20
50
15
°C
°C
CQFP G4T
CQFP G2U/G1U
Lead Temperature (soldering, 10 seconds)
Data Retention (Mil Temp)
20 years
CS1-4 capacitance
CCS
CI/O
CAD
V
IN = 0 V, f = 1.0 MHz
I/O = 0 V, f = 1.0 MHz
IN = 0 V, f = 1.0 MHz
20
20
50
pF
pF
pF
Endurance - write/erase cycles (Mil Temp)
A9 Voltage for sector protect (VID) (3)
100,000 cycles min.
-2.0 to +14.0
Data I/O capacitance
Address input capacitance
V
V
V
NOTES:
This parameter is guaranteed by design but not tested.
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
LOW CAPACITANCE CQFP
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot VSS to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is VCC + 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9
may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input
voltage on A9 is +13.5V which may overshoot to 14.0 V for periods
(TA = +25°C)
Parameter
Symbol
COE
Conditions
Max
Unit
pF
OE capacitance
VIN = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
VI/O = 0 V, f = 1.0 MHz
32
32
15
15
CQFP G4 capacitance
CS1-4 capacitance
Data I/O capacitance
CWE
pF
CCS
pF
up to 20ns.
CI/O
pF
Address input
capacitance
CAD
VIN = 0 V, f = 1.0 MHz
32
pF
RECOMMENDED OPERATING CONDITIONS
This parameter is guaranteed by design but not tested.
Parameter
Symbol
VCC
VIH
Min
4.5
Max
5.5
Unit
V
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
A9 Voltage for Sector Protect
2.0
VCC + 0.5
+0.8
V
VIL
-0.5
-55
-40
11.5
V
TA
+125
+85
°C
°C
V
TA
VID
12.5
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Symbol
ILI
Conditions
Min
Max
10
Unit
Input Leakage Current
Output Leakage Current
VCC Active Current for Read (1)
VCC = 5.5, VIN = GND or VCC
VCC = 5.5, VIN = GND or VCC
CS = VIL, OE = VIH, f = 5MHz
CS = VIL, OE = VIH
µA
µA
ILOx32
ICC1
10
190
240
mA
mA
VCC Active Current for Program or Erase (2)
ICC2
VCC Standby Current
VCC Static Current
Output Low Voltage
ICC4
ICC3
VOL
VCC = 5.5, CS = VIH, f = 5MHz
VCC = 5.5, CS = VIH
6.5
0.6
mA
mA
V
IOL = 8.0 mA, VCC = 4.5
0.45
Output High Voltage
VOH1
VLKO
IOH = 2.5 mA, VCC = 4.5
0.85 X VCC
3.2
V
V
Low VCC Lock-Out Voltage
4.2
DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically
is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF512K32-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS CONTROLLED
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Symbol
-60
-70
-90
-120
Max
-150
Min
Unit
Min
60
0
Max
Min
70
0
Max
Min
90
0
Max
Min
120
0
Max
Write Cycle Time
tAVAV
tWC
tWS
tCP
150
0
ns
ns
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
Data Setup Time
tWLEL
tELEH
tAVEL
tDVEH
tEHDX
tELAX
tEHEL
40
0
45
0
45
0
50
0
50
0
ns
tAS
ns
tDS
tDH
tAH
tCPH
40
0
45
0
45
0
50
0
50
0
ns
Data Hold Time
ns
Address Hold Time
Chip Select Pulse Width High
40
20
45
20
45
20
50
20
50
20
ns
ns
Duration of Byte Programming Operation (1) tWHWH1
300
15
300
15
300
15
300
15
300
15
µs
Sector Erase Time (2)
Read Recovery Time
Chip Programming Time
Chip Erase Time (3)
tWHWH2
tGHEL
sec
ns
0
0
0
0
0
11
64
11
64
11
64
11
64
11
64
sec
sec
NOTES:
1. Typical value for tWHWH1 is 7µs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 8sec.
AC TEST CONDITIONS
FIG. 4
AC TEST CIRCUIT
IOL
Parameter
Typ
Unit
Current Source
Input Pulse Levels
VIL = 0, VIH = 3.0
V
ns
V
Input Rise and Fall
5
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
D.U.T.
VZ
≈
1.5V
V
(Bipolar Supply)
Ceff = 50 pf
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOH
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Current Source
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
4
WF512K32-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE CONTROLLED
(VCC = 5.0V, TA = -55°C to +125°C)
Parameter
Symbol
-60
-70
-90
-120
-150
Unit
Min
60
0
Max
Min
70
0
Max
Min
90
0
Max
Min
Min Max
1W20 FM5a1x 2K32-XXXn5s
Write Cycle Time
tAVAV
tWC
tCS
150
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
tELWL
tWLWH
tAVWH
tDVWH
tWHDX
0
50
0
0
50
0
ns
ns
ns
ns
ns
ns
ns
µs
sec
ns
µs
sec
ns
tWP
tAS
40
0
45
0
45
0
tDS
tDH
tAH
tWPH
40
0
45
0
45
0
50
0
50
0
Data Hold Time
Address Hold Time
Write Enable Pulse Width High
t
WHAX
40
20
45
20
45
20
50
20
50
20
tWHWL
Duration of Byte Programming Operation (1) tWHWH1
300
15
300
15
300
15
300
15
300
15
Sector Erase Time (2)
tWHWH2
tGHWL
Read Recovery Time before Write
VCC Set-up Time
0
0
0
0
0
tVCS
50
50
50
50
50
Chip Programming Time
Output Enable Setup Time
11
64
11
64
11
64
11
64
11
64
tOES
tOEH
0
0
0
0
0
Output Enable Hold Time (4)
Chip Erase Time (3)
10
10
10
10
10
ns
sec
NOTES:
1. Typical value for tWHWH1 is 7µs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 8sec.
4. For Toggle and Data Polling.
AC CHARACTERISTICS – READ ONLY OPERATIONS
(VCC = 5.0V, TA = -55°C to +125°C)
Parameter
Symbol
-60
-70
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tAVAV
tRC
tACC
tCE
tOE
tDF
tDF
tOH
60
70
90
120
150
ns
ns
ns
ns
ns
ns
ns
Address Access Time
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
60
60
30
20
20
70
70
35
20
20
90
90
35
20
20
120
120
50
150
150
55
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output High Z (1)
Output Enable High to Output High Z (1)
30
35
30
35
Output Hold from Address, CS or OE Change,
whichever is First
0
0
0
0
0
1. Guaranteed by design, but not tested
5
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF512K32-XXX5
FIG. 5
AC WAVEFORMS FOR READ OPERATIONS
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
6
WF512K32-XXX5
FIG. 6
WRITE/ERASE/PROGRAM
OPERATION, WE CONTROLLED
NOTES:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the output of the complement of the data written to the device (for each chip).
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
7
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF512K32-XXX5
FIG. 7
AC WAVEFORMS CHIP/SECTOR
ERASE OPERATIONS
NOTE:
1. SA is the sector address for Sector Erase.
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
8
WF512K32-XXX5
FIG. 8
AC WAVEFORMS FOR DATA POLLING
DURING EMBEDDED ALGORITHM OPERATIONS
9
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF512K32-XXX5
FIG. 9
ALTERNATE CS CONTROLLED
PROGRAMMING OPERATION TIMINGS
NOTES:
1. PA represents the address of the memory location to be programmed.
2. PD represents the data to be programmed at byte address.
3. D7 is the output of the complement of the data written to the device (for each chip).
4. DOUT is the output of the data written to the device.
5. Figure indicates the last two bus cycles of a four bus cycle sequence.
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
10
WF512K32-XXX5
PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)
27.3 (1.075) ± 0.25 (0.010) SQ
PIN 1 IDENTIFIER
SQUARE PAD
ON BOTTOM
25.4 (1.0) TYP
4.34 (0.171)
MAX
3.81 (0.150)
± 0.13 (0.005)
1.42 (0.056) ± 0.13 (0.005)
0.76 (0.030) ± 0.13 (0.005)
2.54 (0.100)
TYP
1.27 (0.050) TYP DIA
15.24 (0.600) TYP
25.4 (1.0) TYP
0.46 (0.018) ± 0.05 (0.002) DIA
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
11
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF512K32-XXX5
PACKAGE 510: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2U)
25.15 (0.990) ± 0.25 (0.010) SQ
3.51 (0.140) MAX
22.36 (0.880) ± 0.25 (0.010) SQ
0.25 (0.010) ± 0.10 (0.002)
Pin 1
0.25 (0.010) REF
R 0.25
(0.010)
24.0 (0.946)
± 0.25 (0.010)
0.53 (0.021)
± 0.18 (0.007)
1° / 7°
1.01 (0.040)
± 0.13 (0.005)
23.87
(0.940) REF
DETAIL A
1.27 (0.050) TYP
SEE DETAIL "A"
0.38 (0.015) ± 0.05 (0.002)
20.3 (0.800) REF
The White 68 lead G2U CQFP
fills the same fit and function as
the JEDEC 68 lead CQFJ or 68
PLCC. But the G2U has the TCE
and lead inspection advantage
of the CQFP form.
0.940"
TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 519: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1U)
25.27 (0.995) ± 0.13 (0.005) SQ
3.56 (0.140) MAX
23.88 (0.940) ± 0.25 (0.010) SQ
0.25 (0.010)
0.61 (0.024)
± 0.15 (0.006)
0.84 (0.033) REF
DETAIL A
SEE DETAIL "A"
1.27 (0.050)
0.38 (0.015) ± 0.05 (0.002)
20.3 (0.800) REF
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
12
WF512K32-XXX5
PACKAGE 501: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G4)
5.1 (0.200) MAX
39.6 (1.56) ± 0.38 (0.015) SQ
1.27 (0.050)
± 0.1 (0.005)
PIN 1 IDENTIFIER
Pin 1
12.7 (0.500)
± 0.5 (0.020)
4 PLACES
5.1 (0.200)
± 0.25 (0.010)
4 PLACES
0.25 (0.010)
± 0.05 (0.002)
1.27 (0.050)
TYP
0.38 (0.015)
± 0.08 (0.003)
68 PLACES
38 (1.50) TYP
4 PLACES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T)
3.56 (0.140) MAX
39.6 (1.56) ± 0.38 (0.015) SQ
PIN 1 IDENTIFIER
Pin 1
12.7 (0.500)
± 0.5 (0.020)
4 PLACES
5.1 (0.200)
± 0.25 (0.010)
4 PLACES
0.25 (0.010)
± 0.05 (0.002)
0.38 (0.015)
1.27 (0.050)
TYP
± 0.08 (0.003)
68 PLACES
38 (1.50) TYP
4 PLACES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
13
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WF512K32-XXX5
ORDERING INFORMATION
W F 512K32 X - XXX X X 5 X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
VPP PROGRAMMING VOLTAGE
5 = 5 V
DEVICE GRADE:
M= Military Screened
I = Industrial
C = Commercial
-55°C to +125°C
-40°C to +85°C
0°C to +70°C
PACKAGE TYPE:
H1 = 1.075" sq. Ceramic Hex In Line Package, HIP (Package 400*)
G2U = 22.4mm Low Profile CQFP (Package 510)
G1U = 23.9mm Low Profile CQFP (Package 519)
G4 = 40mm Low Capacitance, CQFP (Package 501)
G4T = 40mm Low Profile CQFP (Package 502)
ACCESS TIME (ns)
IMPROVEMENT MARK
N = No Connect at pins 21 and 39 in HIP for Upgrade (H1 only)*
F = Low Capacitance Device (G4 only)
ORGANIZATION, 512K x 32
User configurable as 1M x 16 or 2M x 8
Flash
WHITE ELECTRONIC DESIGNS CORP.
* Call factory for PGA type (HIP) package options.
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
14
WF512K32-XXX5
DEVICE TYPE
SPEED
PACKAGE
SMD NO.
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
150ns
120ns
90ns
66 pin HIP (H1) 1.075" sq.
66 pin HIP (H1) 1.075" sq.
66 pin HIP (H1) 1.075" sq.
66 pin HIP (H1) 1.075" sq.
5962-94612 01HUX
5962-94612 02HUX
5962-94612 03HUX
5962-94612 04HUX
70ns
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
150ns
120ns
90ns
68 lead CQFP Low Profile (G4T)
68 lead CQFP Low Profile (G4T)
68 lead CQFP Low Profile (G4T)
68 lead CQFP Low Profile (G4T)
5962-94612 01HTX
5962-94612 02HTX
5962-94612 03HTX
5962-94612 04HTX
70ns
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
150ns
120ns
90ns
68 lead Low Capacitance
CQFP (G4)
5962-94612 01HNX
5962-94612 02HNX
5962-94612 03HNX
5962-94612 04HNX
68 lead Low Capacitance
CQFP (G4)
68 lead Low Capacitance
CQFP (G4)
70ns
68 lead Low Capacitance
CQFP (G4)
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
150ns
120ns
90ns
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
5962-94612 01HZX
5962-94612 02HZX
5962-94612 03HZX
5962-94612 04HZX
70ns
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
150ns
120ns
90ns
68 lead CQFP/J (G1U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
5962-94612 01H9X
5962-94612 02H9X
5962-94612 03H9X
5962-94612 04H9X
70ns
15
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
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