WF512K32-120G4TQ5A [ETC]
EEPROM ; EEPROM\n型号: | WF512K32-120G4TQ5A |
厂家: | ETC |
描述: | EEPROM
|
文件: | 总15页 (文件大小:340K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
White Electronic Designs
n
Organized as 512Kx32
n
n
Access Times of 60, 70, 90, 120, 150ns
Packaging
n Commercial, Industrial and Military Temperature Ranges
n
n
n
n
n
5 Volt Programming. 5V 10ꢀ Supply.
Low Power CMOS, 6.5mA Standby
• 66 pin, PGA Type, 1.075" square, Hermetic Ceramic
HIP (Package 400).
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
Built-in Decoupling Caps for Low Noise Operation
• 68 lead, 40mm, Low Profile 3.5mm (0.140"), CQFP
(Package 502)1
• 68 lead, 23.9mm (0.940") Low Profile CQFP (G1U)
3.5mm (0.140") high, (Package 519)
n Page Program Operation and Internal Program
Control Time
• 68 lead, 22.4mm (0.880") Low Profile CQFP (G2U)
3.5mm (0.140") high, (Package 510)1
n
Weight
• WF512K32N - XH1X5 - 13 grams typical
• WF512K32 - XG4TX51 - 20 grams typical
• WF512K32 - XG1UX5 - 5 grams typical
• WF512K32 - XG2UX51 - 8 grams typical
n 100,000 Erase/Program Cycles Minimum
n
n
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Sector Architecture
8 equal size sectors of 64KBytes each
Note 1: Package Not Recommended for New Design
Note 2: See Flash Programming Application Note 4M5 for algorithms.
Any combination of sectors can be concurrently
erased. Also supports full chip erase
FIG. 1
I/O0-31 Data Inputs/Outputs
A0-18 Address Inputs
WE1-4 Write Enables
CS1-4
OE
Chip Selects
Output Enable
Power Supply
Ground
VCC
GND
NC
Not Connected
WE3 CS3
WE4 CS4
WE1 CS1
WE2 CS2
OE
A0-18
512K x 8
512K x 8
512K x 8
512K x 8
8
8
8
8
I/O16-23
I/O24-31
I/O0-7
I/O8-15
March 2002 Rev. 6
1
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White Electronic Designs
FIG. 2
I/O0-31 Data Inputs/Outputs
A0-18 Address Inputs
9
8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
WE
Write Enable
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
0
1
2
3
4
5
6
7
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
CS1-4 Chip Selects
OE
Output Enable
Power Supply
Ground
VCC
GND
NC
GND
I/O
8
9
Not Connected
I/O
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
CS 2
CS 3
CS4
CS1
WE
OE
0-18
A
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
512K x 8
512K x 8
512K x 8
512K x 8
8
8
8
8
I/O16-23
I/O24-31
I/O0-7
I/O8-15
FIG. 3
I/O0-31 Data Inputs/Outputs
A0-18 Address Inputs
WE1-4 Write Enables
CS1-4 Chip Selects
9
8
7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
0
1
2
3
4
5
6
7
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
OE
Output Enable
Power Supply
Ground
VCC
GND
GND
I/O
8
9
I/O
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
WE
WE
WE
4 CS4
2 CS 2
WE3
1 CS 1
CS3
OE
0-18
A
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
512K x 8
512K x 8
512K x 8
512K x 8
8
8
8
8
I/O16-23
I/O24-31
I/O0-7
I/O8-15
Note 1: Package Not Recommended for New Design
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
2
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(TA = +25°C)
Operating Temperature
-55 to +125
-2.0 to +7.0
°C
V
Supply Voltage Range (VCC)
OEcapacitance
COE
CWE
V
V
IN = 0 V, f = 1.0 MHz
IN = 0 V, f = 1.0 MHz
50
pF
pF
Signal voltage range (any pin except A9) (2) -2.0 to +7.0
V
WE1-4 capacitance
HIP (PGA)
20
50
15
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention (Mil Temp)
-65 to +150
+300
°C
°C
CQFPG4T
CQFPG2U/G1U
20 years
CS1-4 capacitance
CCS
CI/O
CAD
V
IN = 0 V, f = 1.0 MHz
I/O = 0 V, f = 1.0 MHz
IN = 0 V, f = 1.0 MHz
20
20
50
pF
pF
pF
Endurance - write/erase cycles (Mil Temp)
A9 Voltage for sector protect (VID) (3)
NOTES:
100,000 cycles min.
-2.0 to +14.0
DataI/Ocapacitance
Addressinputcapacitance
V
V
V
This parameter is guaranteed by design but not tested.
1. Stresses above the absolute maximum rating may cause permanent damage
to the device. Extended operation at the maximum levels may degrade
performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,
inputs may overshoot Vss to -2.0 V for periods of up to 20ns. Maximum DC
voltage on output and I/O pins is Vcc + 0.5V. During voltage transitions,
outputs may overshoot to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9
may overshoot Vss to -2V for periods of up to 20ns. Maximum DC input
voltage on A9 is +13.5V which may overshoot to 14.0 V for periods up
to 20ns.
(TA = +25°C)
OE capacitance
COE
CWE
CCS
VIN = 0 V, f = 1.0 MHz 32
VIN = 0 V, f = 1.0 MHz 32
VIN = 0 V, f = 1.0 MHz 15
pF
CQFP G4 capacitance
CS1-4 capacitance
Data I/O capacitance
pF
pF
pF
CI/O VI/O = 0 V, f = 1.0 MHz 15
Address input capacitance
CAD VIN = 0 V, f = 1.0 MHz 32
pF
This parameter is guaranteed by design but not tested.
SupplyVoltage
VCC
VIH
VIL
TA
4.5
2.0
5.5
VCC + 0.5
+0.8
V
V
InputHighVoltage
InputLowVoltage
-0.5
-55
-40
11.5
V
OperatingTemp.(Mil.)
OperatingTemp.(Ind.)
A9 VoltageforSectorProtect
+125
+85
°C
°C
V
TA
VID
12.5
(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
InputLeakageCurrent
ILI
VCC = 5.5, VIN =GNDorVCC
VCC = 5.5, VIN =GNDorVCC
CS=VIL, OE = VIH, f=5MHz
CS=VIL, OE=VIH
10
10
µA
µA
OutputLeakageCurrent
VCC ActiveCurrentforRead(1)
ILOx32
ICC1
190
240
mA
mA
VCC ActiveCurrentforProgramorErase(2)
ICC2
VCC Standby Current
VCC Static Current
Output Low Voltage
ICC4
ICC3
VOL
VCC = 5.5, CS = VIH, f = 5MHz
VCC =5.5, CS =VIH
6.5
0.6
mA
mA
V
IOL = 8.0 mA, VCC = 4.5
0.45
Output High Voltage
VOH1
VLKO
IOH = 2.5 mA, VCC = 4.5
0.85 X VCC
3.2
V
V
Low VCC Lock-Out Voltage
4.2
DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency component typically is less than2
mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3
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(VCC = 5.0V, VSS = 0V, TA = -55°C to +125°C)
Write Cycle Time
tAVAV
tWLEL
tWC
tWS
tCP
60
0
70
0
90
0
120
0
150
0
ns
ns
WriteEnableSetupTime
ChipSelectPulseWidth
AddressSetupTime
tELEH
40
0
45
0
45
0
50
0
50
0
ns
tAVEL
tAS
tDS
ns
DataSetupTime
tDVEH
40
0
45
0
45
0
50
0
50
0
ns
Data Hold Time
tEHDX
tDH
tAH
tCPH
ns
AddressHoldTime
tELAX
40
20
45
20
45
20
50
20
50
20
ns
ChipSelectPulseWidthHigh
DurationofByteProgrammingOperation(1)
SectorEraseTime(2)
Read Recovery Time
ChipProgrammingTime
Chip Erase Time (3)
tEHEL
ns
tWHWH1
tWHWH2
tGHEL
300
15
300
15
300
15
300
15
300
15
µs
sec
ns
0
0
0
0
0
11
64
11
64
11
64
11
64
11
64
sec
sec
NOTES:
1. Typical value for tWHWH1 is 7µs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 8sec.
InputPulseLevels
InputRiseandFall
VIL = 0, VIH = 3.0
V
5
ns
V
V
InputandOutputReferenceLevel
OutputTimingReferenceLevel
1.5
1.5
Notes:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75W.
VZ is typically the midpoint of VOH and VOL.
IOL & IOHare adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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White Electronic Designs
WF512K32-XXX5
Write Cycle Time
tAVAV
tELWL
tWC
tCS
60
0
70
0
90
0
120
150
ns
ChipSelectSetupTime
WriteEnablePulseWidth
AddressSetupTime
0
0
ns
tWLWH
tAVWH
tDVWH
tWHDX
tWP
tAS
tDS
40
0
45
0
45
0
50
0
50
0
ns
ns
DataSetupTime
40
0
45
0
45
0
50
0
50
0
ns
Data Hold Time
tDH
tAH
tWPH
ns
AddressHoldTime
t
WHAX
40
20
45
20
45
20
50
20
50
20
ns
WriteEnablePulseWidthHigh
DurationofByteProgrammingOperation(1)
SectorEraseTime(2)
tWHWL
ns
tWHWH1
tWHWH2
tGHWL
300
15
300
15
300
15
300
15
300
15
µs
sec
ns
Read Recovery Time before Write
VCC Set-upTime
0
0
0
0
0
tVCS
50
50
50
50
50
µs
sec
ns
ChipProgrammingTime
OutputEnableSetupTime
11
64
11
64
11
64
11
64
11
64
tOES
tOEH
0
0
0
0
0
OutputEnableHoldTime(4)
Chip Erase Time (3)
10
10
10
10
10
ns
sec
NOTES:
1. Typical value for tWHWH1 is 7µs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 8sec.
4. For Toggle and Data Polling.
Read Cycle Time
tAVAV
tAVQV
tELQV
tRC
60
70
90
120
150
ns
ns
ns
ns
ns
ns
ns
AddressAccessTime
tACC
tCE
60
60
30
20
20
70
70
35
20
20
90
90
35
20
20
120
120
50
150
150
55
Chip Select Access Time
OutputEnabletoOutputValid
ChipSelecttoOutputHighZ(1)
OutputEnableHightoOutputHighZ(1)
tGLQV
tEHQZ
tGHQZ
tAXQX
tOE
tDF
30
35
tDF
30
35
OutputHoldfromAddress,CSorOEChange,
whicheverisFirst
tOH
0
0
0
0
0
1. Guaranteed by design, but not tested
5
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White Electronic Designs
NOTES:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7 is the output of the complement of the data written to the device (for each chip).
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
7
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NOTE:
1. SA is the sector address for Sector Erase.
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
8
White Electronic Designs
9
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Notes:
1. PA represents the address of the memory location to be programmed.
2. PD represents the data to be programmed at byte address.
3. D7 is the output of the complement of the data written to the device (for each chip).
4. DOUT is the output of the data written to the device.
5. Figure indicates the last two bus cycles of a four bus cycle sequence.
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
11
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
White Electronic Designs
The White 68 lead G2U CQFP
fills the same fit and function
as the JEDEC 68 lead CQFJ or
68 PLCC. But the G2U has the
TCE and lead inspection
advantage of the CQFP form.
0.940"
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Note 1: Package Not Recommended for New Design
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
12
White Electronic Designs
The White 68 lead G1U CQFP
fills the same fit and function
as the JEDEC 68 lead CQFJ or
68 PLCC. But the G1U has the
TCE and lead inspection
advantage of the CQFP form.
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
5.1 (0.200) MAX
39.6 (1.56) 0.38 (0.015) SQ
1.27 (0.050)
0.1 (0.005)
PIN 1 IDENTIFIER
Pin 1
12.7 (0.500)
0.5 (0.020)
4 PLACES
5.1 (0.200)
0.25 (0.010)
4 PLACES
0.25 (0.010)
0.05 (0.002)
1.27 (0.050)
TYP
0.38 (0.015)
0.08 (0.003)
68 PLACES
38 (1.50) TYP
4 PLACES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Note 1: Package Not Recommended for New Design
13
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White Electronic Designs
Blank=Goldplatedleads
A =Solderdipleads
5 = 5 V
Q=MIL-STD-883Compliant
M= MilitaryScreened
I = Industrial
-55°Cto+125°C
-40°C to +85°C
0°Cto+70°C
C = Commercial
H1 = 1.075" sq. Ceramic Hex In Line Package, HIP (Package 400*)
G2U1 = 22.4mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 510)
G4T1 = 40mm Low Profile CQFP (Package 502)
G1U = 23.9mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 519)
N=NoConnectatpins21and39inHIPforUpgrade
User configurable as 1M x 16 or 2M x 8
Note 1: Package Not Recommended for New Design
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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512K x 32 Flash Module
150ns
120ns
90ns
66 pin HIP (H1) 1.075" sq.
5962-94612 01H4X
5962-94612 02H4X
5962-94612 03H4X
5962-94612 04H4X
5962-94612 05H4X
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
66 pin HIP (H1) 1.075" sq.
66 pin HIP (H1) 1.075" sq.
66 pin HIP (H1) 1.075" sq.
66 pin HIP (H1) 1.075" sq.
70ns
60ns
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
150ns
120ns
90ns
68 lead CQFP Low Profile (G4T)
68 lead CQFP Low Profile (G4T)
68 lead CQFP Low Profile (G4T)
68 lead CQFP Low Profile (G4T)
68 lead CQFP Low Profile (G4T)
5962-94612 01HTX
5962-94612 02HTX
5962-94612 03HTX
5962-94612 04HTX
5962-94612 05HTX
70ns
60ns
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
150ns
120ns
90ns
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
5962-94612 01HZX
5962-94612 02HZX
5962-94612 03HZX
5962-94612 04HZX
5962-94612 05HZX
70ns
60ns
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
150ns
120ns
90ns
68 lead CQFP (G1U)
68 lead CQFP (G1U)
68 lead CQFP (G1U)
68 lead CQFP (G1U)
68 lead CQFP (G1U)
5962-94612 01H9X
5962-94612 02H9X
5962-94612 03H9X
5962-94612 04H9X
5962-94612 05H9X
70ns
60ns
15
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