WMS128K8V-20FRC [ETC]
128Kx8 3.3V MONOLITHIC SRAM; 128Kx8 3.3V单片SRAM
| 型号： | WMS128K8V-20FRC |
| 厂家： | 
ETC |
| 描述： | 128Kx8 3.3V MONOLITHIC SRAM |
| 文件： | 总8页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WMS128K8V-XXX
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
Parameter
Symbol
TA
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
Unit
°C
°C
V
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
TSTG
VG
TJ
°C
V
VCC
-0.5
5.5
CAPACITANCE
(TA = +25°C)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
VCC
Min
3.0
Max
3.6
Unit
V
Parameter
Symbol
CIN
Condition
IN = 0V, f = 1.0MHz
VOUT = 0V, f = 1.0MHz
Max Unit
Supply Voltage
Input capacitance
Output capacitance
V
20
20
pF
pF
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
VIH
2.2
VCC + 0.3
+0.8
V
COUT
VIL
-0.3
-55
V
This parameter is guaranteed by design but not tested.
TA
+125
°C
DC CHARACTERISTICS
(VCC = 3.3V ±0.3V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
Output Leakage Current
ILI
ILO
VCC = 3.3, VIN = GND to VCC
CS = VIH, OE = VIH, VOUT = GND to VCC
CS = VIL, OE = VIH, f = 5MHz, VCC = 3.3
CS = VIH, OE = VIH, f = 5MHz, VCC = 3.3
IOL = 8mA
10
µA
µA
mA
mA
V
10
120
8
Operating Supply Current (x 32 Mode)
Standby Current
ICC
ISB
Output Low Voltage
VOL
VOH
0.4
Output High Voltage
IOH = -4.0mA
2.4
V
AC TEST CIRCUIT
AC TEST CONDITIONS
IOL
Parameter
Input Pulse Levels
Typ
Unit
V
Current Source
VIL = 0, VIH = 2.5
Input Rise and Fall
5
ns
V
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
D.U.T.
VZ ≈ 1.5V
V
(Bipolar Supply)
Ceff = 50 pf
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
IOH
Current Source
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
2
WMS128K8V-XXX
AC CHARACTERISTICS
(VCC = 3.3V, TA = -55°C to +125°C)
Parameter
Symbol
-15
-17
-20
-25
Max
-35
Units
Read Cycle
Min Max Min Max
Min
Max Min
Min Max
Read Cycle Time
tRC
tAA
15
0
17
0
20
25
35
35
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
15
17
20
25
Output Hold from Address Change
Chip Select Access Time
tOH
0
0
tACS
tOE
15
10
17
11
20
12
5
25
15
35
20
5
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
tCLZ1
tOLZ1
tCHZ1
tOHZ1
5
5
5
5
5
5
5
5
8
8
9
9
10
10
12
12
15
15
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(VCC = 3.3V, TA = -55°C to +125°C)
Parameter
Symbol
-15
-17
-20
-25
-35
Units
Write Cycle
Min Max Min Max
Min
20
15
15
12
15
0
Max
Min Max
Min
35
30
30
18
30
0
Max
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
tAS
15
13
13
10
13
0
17
14
14
11
14
0
25
20
20
15
20
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
tAH
0
0
0
0
0
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
tOW1
tWHZ1
tDH
5
5
5
5
5
8
9
10
10
15
0
0
0
0
0
1. This parameter is guaranteed by design but not tested.
3
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WMS128K8V-XXX
TIMING WAVEFORM - READ CYCLE
tRC
ADDRESS
CS
tAA
tRC
tCHZ
tACS
tCLZ
ADDRESS
tAA
OE
tOE
tOLZ
tOH
tOHZ
DATA I/O
DATA I/O
PREVIOUS DATA VALID
DATA VALID
DATA VALID
HIGH IMPEDANCE
READ CYCLE 1 (CS = OE = V , WE = V
)
READ CYCLE 2 (WE = V )
IH
IL IH
WRITE CYCLE - WE CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS
WE
tAS
tWP
tOW
tDH
tWHZ
tDW
DATA I/O
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
WRITE CYCLE - CS CONTROLLED
WS32K32-XHX
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
4
WMS128K8V-XXX
PACKAGE 101: 32 LEAD, CERAMIC SOJ
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 220: 32 LEAD, CERAMIC FLAT PACK
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
5
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WMS128K8V-XXX
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
6
WMS128K8V-XXX
PACKAGE 601: 32 PIN, RECTANGULAR CERAMIC LEADLESS CHIP CARRIER
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
7
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WMS128K8V-XXX
ORDERING INFORMATION
W M S 128K8 V - XXX X X X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
M = Military Screened
-55°C to +125°C
I
= Industrial
-40°C to +85°C
0°C to +70°C
C = Commercial
PACKAGE:
C = 32 Pin Ceramic .600" DIP (Package 300)
CL = 32 Pin Rectangular Ceramic Leadless Chip Carrier (Package 601)
DR = 32 Lead Ceramic SOJ (Package 101) Revolutionary
FR = 32 Lead Ceramic Flat Pack (Package 220**) Revolutionary
ACCESS TIME (ns)
IMPROVEMENT MARK:
Low Voltage Supply 3.3V ± 10%
ORGANIZATION, 128K x 8
SRAM
MONOLITHIC
WHITE ELECTRONIC DESIGNS CORP.
** Package under developement.
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
8
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