WS128K32-25G2TI [ETC]
x32 SRAM Module ; X32 SRAM模块\n
| 型号： | WS128K32-25G2TI |
| 厂家： | 
ETC |
| 描述： | x32 SRAM Module
|
| 文件： | 总10页 (文件大小：506K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
n
Low Power Data Retention - only available in G2T
package type
n
Access Times of 15, 17, 20, 25, 35, 45, 55ns
n Commercial, Industrial and Military Temperature Ranges
n MIL-STD-883 Compliant Devices Available
n
n
n
5 Volt Power Supply
n
Packaging
Low Power CMOS
• 66 pin, PGA Type, 1.075" square, Hermetic Ceramic
HIP (Package 400)
TTL Compatible Inputs and Outputs
• 68 lead, 40mm CQFP (G4T)1, 3.56mm (0.140")
(Package 502).
n Built in Decoupling Caps and Multiple Ground Pins for
Low Noise Operation
• 68 lead, 22.4mm CQFP (G2T)1, 4.57mm (0.180"),
(Package 509)
n
Weight:
WS128K32-XG1UX - 5 grams typical
WS128K32-XG1TX - 5 grams typical
WS128K32-XG2TX1 - 8 grams typical
WS128K32-XH1X - 13 grams typical
WS128K32-XG4TX1 - 20 grams typical
• 68 lead, 23.9mm Low Profile CQFP (G1U), 3.57mm
(0.140"), (Package 519)
• 68 lead, 23.9mm Low Profile CQFP (G1T), 4.06 mm
(0.160"), (Package 524)
n
Organized as 128Kx32; User Configurable as 256Kx16
or 512Kx8
n All devices are upgradeable to 512Kx32
Note 1: Package Not Recommended For New Design
I/O0-31 Data Inputs/Outputs
A0-16 Address Inputs
WE1-4 Write Enables
CS1-4
OE
Chip Selects
Output Enable
Power Supply
Ground
VCC
GND
NC
Not Connected
November 2001 Revꢀ 9
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
I/O0-31
A0-16
WE
DataInputs/Outputs
AddressInputs
Write Enables
Chip Selects
CS1-4
OE
Output Enable
Power Supply
Ground
VCC
GND
NC
Not Connected
Note 1: Package Not Recommended For New Design
I/O0-31
DataInputs/Outputs
AddressInputs
Write Enables
Chip Selects
A0-16
WE1-4
CS1-4
OE
Output Enable
Power Supply
Ground
VCC
GND
NC
Not Connected
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
CS
H
L
OE
X
WE
X
Mode
Standby
Read
Data I/O
High Z
Power
Standby
Active
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
TA
TSTG
VG
-55
-65
-0.5
+125
+150
Vcc+0.5
150
°C
°C
V
L
H
Data Out
Data In
High Z
L
X
L
Write
Active
L
H
H
Out Disable
Active
TJ
°C
V
VCC
-0.5
7.0
OEcapacitance
COE
CWE
V
V
IN = 0 V, f = 1.0 MHz
IN = 0 V, f = 1.0 MHz
50
pF
Supply Voltage
VCC
VIH
VIL
4.5
5.5
VCC + 0.3
+0.8
V
V
WE1-4 capacitance
HIP (PGA) H1
CQFPG4
pF
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
2.2
-0.3
-55
20
50
20
20
V
CQFPG2T
CQFPG1U/G1T
TA
+125
°C
CS1-4 capacitance
CCS
CI/O
CAD
V
IN = 0 V, f = 1.0 MHz
I/O = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
20
20
50
pF
pF
pF
DataI/Ocapacitance
V
Addressinputcapacitance
This parameter is guaranteed by design but not tested.
InputLeakageCurrent
OutputLeakageCurrent
OperatingSupplyCurrent
StandbyCurrent
ILI
VCC =5.5, VIN =GNDtoVCC
10
10
10
10
10
10
10
10
µA
ILO
ICC
CS=VIH, OE=VIH,VOUT =GNDtoVCC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
CS= VIH, OE = VIH, f=5MHz, Vcc=5.5
IOL = 8mA, VCC = 4.5
µA
mA
mA
V
600
80
600
80
600
80
600
60
ISB
OutputLowVoltage
OutputHighVoltage
VOL
VOH
0.4
0.4
0.4
0.4
IOH = -4.0mA, VCC = 4.5
2.4
2.4
2.4
2.4
V
InputLeakageCurrent
OutputLeakageCurrent
OperatingSupplyCurrent
StandbyCurrent
ILI
ILO
ICC
ISB
VCC =5.5, VIN =GNDtoVCC
10
10
10
µA
µA
mA
mA
V
CS=VIH, OE=VIH,VOUT =GNDtoVCC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
CS=VIH, OE = VIH, f=5MHz, Vcc=5.5
IOL = 2.1mA, VCC = 4.5
10
600
60
10
600
60
10
600
60
OutputLowVoltage
OutputHighVoltage
VOL
VOH
0.4
0.4
0.4
IOH = -1.0mA, VCC = 4.5
2.4
2.4
2.4
V
DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DataRetentionVoltage
VCC
ICCDR
TCDR
TR
VCC = 2.0V
2
-
-
1
-
-
2
-
V
mA
ns
DataRetentionQuiescentCurrent
ChipDisabletoDataRetentionTime(1)
CS•VCC -0.2V
VIN •VCC -0.2V
orVIN - 0.2V
0
OperationRecoveryTime(1)
TRC
-
ns
Parameter guaranteed, but not tested.
*Low Power Data Retention available only in G2T Package Type.
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
Read Cycle Time
tRC
tAA
15
0
17
0
20
0
25
0
35
0
45
0
55
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
AddressAccessTime
15
17
20
25
35
45
55
OutputHoldfromAddressChange
Chip Select Access Time
tOH
tACS
tOE
15
10
17
10
20
12
25
15
35
20
45
25
55
30
OutputEnabletoOutputValid
ChipSelecttoOutputinLowZ
OutputEnabletoOutputinLowZ
ChipDisabletoOutputinHighZ
OutputDisabletoOutputinHighZ
tCLZ1
tOLZ1
tCHZ1
tOHZ1
3
0
3
0
3
0
3
0
3
0
3
0
3
0
12
12
12
12
12
12
12
12
20
20
20
20
20
20
1. This parameter is guaranteed by design but not tested.
WS128K32-XXX /
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
15
14
14
10
14
0
17
14
15
10
14
0
20
25
20
20
15
20
0
35
45
30
30
25
30
0
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
EDI8C32128C
ChipSelecttoEndofWrite
AddressValidtoEndofWrite
DataValidtoEndofWrite
WritePulseWidth
15
15
12
15
0
25
25
20
25
0
45
45
25
45
0
AddressSetupTime
tAS
AddressHoldTime
tAH
0
0
0
0
0
0
0
OutputActivefromEndofWrite
Write Enable to Output in High Z
Data Hold Time
tOW1
tWHZ1
tDH
3
3
3
3
4
4
4
10
10
12
15
20
25
25
0
0
0
0
0
0
0
1. This parameter is guaranteed by design but not tested.
Input Pulse Levels
Input Rise and Fall
VIL = 0, VIH = 3.0
V
ns
V
5
InputandOutputReferenceLevel
Output Timing Reference Level
Notes:
1.5
1.5
V
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Wꢀ
VZ is typically the midpoint of VOH and VOL.
IOL & IOHare adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WS32K32-XHX
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Note 1: Package Not Recommended For New Design
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
PACKAGE 524: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1T)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
Blank=Goldplatedleads
A = Solderdipleads
Q= MIL-STD-883Compliant
M= MilitaryScreened
-55°Cto+125°C
I = Industrial -40°Cto+85°C
C = Commercial
0°Cto+70°C
H1= 1.075" sq. Ceramic Hex-In-line Package, HIP (Package 400)
G2T1 = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509)
G1U=23.9mmCeramicQuadFlatPack,LowProfileCQFP(Package519)
G1T = 23.9mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 524)
G4T1 = 40 mm Low Profile CQFP (Package 502)
N = No Connect at pin 8, 21, 28 and 39 in HIP for Upgrades
L = LowPower*
User configurable as 256Kx16 or 512Kx8
* Low Power Data Retention only available in G2T Package Type
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
DEVICE TYPE
SPEED
PACKAGE
SMD NOꢀ
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
66 pin HIP (H1)
5962-93187 05H4X
5962-93187 06H4X
5962-93187 07H4X
5962-93187 08H4X
5962-93187 09H4X
5962-93187 10H4X
5962-93187 11H4X
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
5962-95595 05HYX1
5962-95595 06HYX1
5962-95595 07HYX1
5962-95595 08HYX1
5962-95595 09HYX1
5962-95595 10HYX1
5962-95595 11HYX1
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP/J (G2T)1
68 lead CQFP/J (G2T)1
68 lead CQFP/J (G2T)1
68 lead CQFP/J (G2T)1
68 lead CQFP/J (G2T)1
68 lead CQFP/J (G2T)1
68 lead CQFP/J (G2T)1
5962-95595 05HMX1
5962-95595 06HMX1
5962-95595 07HMX1
5962-95595 08HMX1
5962-95595 09HMX1
5962-95595 10HMX1
5962-95595 11HMX1
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
128K x 32 SRAM Module
55ns
45ns
35ns
25ns
20ns
17ns
15ns
68 lead CQFP/J(G1U)
68 lead CQFP/J (G1U)
68 lead CQFP/J (G1U)
68 lead CQFP/J (G1U)
68 lead CQFP/J (G1U)
68 lead CQFP/J (G1U)
68 lead CQFP/J (G1U)
5962-95595 05H9X
5962-95595 06H9X
5962-95595 07H9X
5962-95595 08H9X
5962-95595 09H9X
5962-95595 10H9X
5962-95595 11H9X
Note 1: Package Not Recommended For New Design
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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