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WS128K32V-17G1UM [ETC]

128Kx32 3.3V SRAM MULTICHIP PACKAGE; 128Kx32 3.3V SRAM多芯片封装
WS128K32V-17G1UM
型号： WS128K32V-17G1UM
厂家： ETC    ETC
描述：

128Kx32 3.3V SRAM MULTICHIP PACKAGE
128Kx32 3.3V SRAM多芯片封装

静态存储器
文件： 总8页 (文件大小：102K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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WS128K32V-XXX  
128Kx32 3.3V SRAM MULTICHIP PACKAGE PRELIMINARY*  
FEATURES  
■ 3.3 Volt Power Supply  
■ Low Power CMOS  
■ Access Times of 15**, 17, 20, 25, 35ns  
■ Low Voltage Operation  
■ Packaging  
■ TTL Compatible Inputs and Outputs  
• 66-pin, PGA Type, 1.075 inch square Hermetic Ceramic  
HIP (Package 400)  
■ Built-in Decoupling Caps and Multiple Ground Pins for Low  
Noise Operation  
• 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880 inch) square  
(Package 509), 4.57mm (0.180 inch) high. Designed to fit  
JEDEC 68 lead 0.990" CQFJ footprint (Fig. 2)  
■ Weight  
WS128K32V-XG2TX - 8 grams typical  
WS128K32V-XG1UX - 5 grams typical  
WS128K32V-XH1X - 13 grams typical  
• 68 lead, Hermetic CQFP (G1U), 23.8mm (0.940 inch)  
square (Package 509), 3.56mm (0.140 inch) high.  
■ Organized as 128Kx32; User Configurable as 256Kx16 or  
*
This data sheet describes a product that is not fully qualified or  
characterized and is subject ot change without notice.  
512Kx8  
■ Commercial, Industrial and Military Temperature Ranges  
** Commercial and Industrial temperature ranges only.  
FIG. 1 PIN CONFIGURATION FOR WS128K32NV-XH1X  
TOP VIEW  
PIN DESCRIPTION  
1
12  
23  
34  
45  
56  
I/O0-31  
A0-16  
WE1-4  
CS1-4  
OE  
Data Inputs/Outputs  
Address Inputs  
Write Enables  
Chip Selects  
I/O8  
I/O9  
I/O10  
A13  
WE2  
CS2  
GND  
I/O11  
A10  
I/O15  
I/O14  
I/O13  
I/O12  
OE  
I/O24  
I/O25  
I/O26  
A6  
VCC  
CS4  
WE4  
I/O27  
A3  
I/O31  
I/O30  
I/O29  
I/O28  
A0  
Output Enable  
Power Supply  
Ground  
VCC  
GND  
NC  
A14  
A7  
Not Connected  
A15  
A11  
NC  
NC  
A4  
A1  
BLOCK DIAGRAM  
A16  
A12  
WE1  
I/O7  
I/O6  
I/O5  
I/O4  
A8  
A5  
A2  
WE1CS1  
WE2CS2  
WE3CS3  
WE4CS4  
NC  
VCC  
CS1  
NC  
A9  
WE3  
CS3  
GND  
I/O19  
I/O23  
I/O22  
I/O21  
I/O20  
OE  
0-16  
A
I/O0  
I/O1  
I/O2  
I/O16  
I/O17  
I/O18  
128K x 8  
128K x 8  
128K x 8  
128K x 8  
I/O3  
8
8
8
8
11  
22  
33  
44  
55  
66  
I/O16-23  
I/O24-31  
I/O0-7  
I/O8-15  
April 2001 Rev. 2  
White Microelectronics • (602) 437-1520 • www.whiteedc.com  
1
WS128K32V-XXX  
FIG. 2 PIN CONFIGURATION FOR WS128K32V-XG2TX AND WS128K32V-XG1UX  
TOP VIEW  
PIN DESCRIPTION  
I/O0-31 Data Inputs/Outputs  
A0-16  
WE1-4  
CS1-4  
OE  
Address Inputs  
Write Enables  
Chip Selects  
Output Enable  
Power Supply  
Ground  
9
8
7
6
5
4
3
2
1
68 67 66 65 64 63 62 61  
60  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
1
2
3
4
5
6
7
I/O16  
I/O17  
I/O18  
I/O19  
I/O20  
I/O21  
I/O22  
I/O23  
GND  
I/O24  
I/O25  
I/O26  
I/O27  
I/O28  
I/O29  
I/O30  
I/O31  
59  
58  
57  
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
VCC  
GND  
NC  
GND  
Not Connected  
I/O  
8
9
I/O  
I/O10  
I/O11  
I/O12  
I/O13  
I/O14  
I/O15  
BLOCK DIAGRAM  
WE1CS1  
WE2CS2  
WE3CS3  
WE4CS4  
OE  
0-16  
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43  
A
128K x 8  
128K x 8  
128K x 8  
128K x 8  
8
8
8
8
I/O16-23  
I/O24-31  
I/O0-7  
I/O8-15  
White Microelectronics • Phoenix, AZ • (602) 437-1520  
2
WS128K32V-XXX  
ABSOLUTE MAXIMUM RATINGS  
TRUTH TABLE  
Parameter  
Symbol  
TA  
Min  
-55  
-65  
-0.5  
Max  
+125  
+150  
4.6  
Unit  
°C  
°C  
V
CS  
H
L
L
L
OE  
X
L
X
H
WE  
X
H
L
H
Mode  
Standby  
Read  
Write  
Out Disable  
Data I/O  
High Z  
Data Out  
Data In  
High Z  
Power  
Standby  
Active  
Active  
Active  
Operating Temperature  
Storage Temperature  
Signal Voltage Relative to GND  
Junction Temperature  
Supply Voltage  
TSTG  
VG  
TJ  
150  
5.5  
°C  
V
VCC  
-0.5  
CAPACITANCE  
(TA = +25°C)  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
VCC  
Min  
3.0  
Max  
3.6  
Unit  
V
Parameter  
Symbol  
COE  
Conditions  
Max Unit  
Supply Voltage  
Input High Voltage  
Input Low Voltage  
OE capacitance  
V
V
IN = 0 V, f = 1.0 MHz  
IN = 0 V, f = 1.0 MHz  
50  
pF  
pF  
VIH  
2.2  
VCC + 0.3  
+0.8  
V
WE1-4 capacitance  
HIP (PGA)  
CWE  
20  
20  
VIL  
-0.3  
V
CQFP G2T/G1U  
CS1-4 capacitance  
CCS  
CI/O  
CAD  
V
IN = 0 V, f = 1.0 MHz  
I/O = 0 V, f = 1.0 MHz  
VIN = 0 V, f = 1.0 MHz  
20  
20  
50  
pF  
pF  
pF  
Data I/O capacitance  
V
Address input capacitance  
This parameter is guaranteed by design but not tested.  
DC CHARACTERISTICS  
(VCC = 3.3V ±0.3V, VSS = 0V, TA = -55°C to +125°C)  
Parameter  
Sym  
Conditions  
Units  
Min  
Max  
Input Leakage Current  
Output Leakage Current  
ILI  
ILO  
VIN = GND to VCC  
10  
µA  
µA  
mA  
mA  
V
CS = VIH, OE = VIH, VOUT = GND to VCC  
CS = VIL, OE = VIH, f = 5MHz  
CS = VIH, OE = VIH, f = 5MHz  
IOL = 8mA  
10  
500  
32  
Operating Supply Current (x 32 Mode)  
Standby Current  
ICC x 32  
ISB  
Output Low Voltage  
VOL  
0.4  
Output High Voltage  
VOH  
IOH = -4.0mA  
2.4  
V
White Microelectronics • (602) 437-1520 • www.whiteedc.com  
3
WS128K32V-XXX  
AC CHARACTERISTICS  
(VCC = 3.3V, TA = -55°C to +125°C)  
Parameter  
Symbol  
-15*  
-17  
-20  
-25  
Max  
-35  
Units  
Read Cycle  
Min Max Min Max  
Min  
Max Min  
Min Max  
Read Cycle Time  
tRC  
tAA  
15  
0
17  
0
20  
25  
35  
35  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
15  
17  
20  
25  
Output Hold from Address Change  
Chip Select Access Time  
tOH  
0
0
tACS  
tOE  
15  
10  
17  
11  
20  
12  
5
25  
15  
35  
20  
5
Output Enable to Output Valid  
Chip Select to Output in Low Z  
Output Enable to Output in Low Z  
Chip Disable to Output in High Z  
Output Disable to Output in High Z  
tCLZ1  
tOLZ1  
tCHZ1  
tOHZ1  
5
5
5
5
5
5
5
5
8
8
9
9
10  
10  
12  
12  
15  
15  
1. This parameter is guaranteed by design but not tested.  
*
Commercial and Industrial only.  
AC CHARACTERISTICS  
(VCC = 3.3V, TA = -55°C to +125°C)  
Parameter  
Symbol  
-15*  
-17  
-20  
-25  
-35  
Units  
Write Cycle  
Min Max Min Max  
Min  
20  
15  
15  
12  
15  
0
Max  
Min Max  
Min  
35  
30  
30  
18  
30  
0
Max  
Write Cycle Time  
tWC  
tCW  
tAW  
tDW  
tWP  
tAS  
15  
13  
13  
10  
13  
0
17  
14  
14  
11  
14  
0
25  
20  
20  
15  
20  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Select to End of Write  
Address Valid to End of Write  
Data Valid to End of Write  
Write Pulse Width  
Address Setup Time  
Address Hold Time  
tAH  
0
0
0
0
0
Output Active from End of Write  
Write Enable to Output in High Z  
Data Hold Time  
tOW1  
tWHZ1  
tDH  
5
5
5
5
5
8
9
10  
10  
15  
0
0
0
0
0
1. This parameter is guaranteed by design but not tested.  
*
Commercial and Industrial only.  
AC TEST CONDITIONS  
FIG. 3  
AC TEST CIRCUIT  
IOL  
Parameter  
Typ  
Unit  
Current Source  
Input Pulse Levels  
VIL = 0, VIH = 3.0  
V
ns  
V
Input Rise and Fall  
5
Input and Output Reference Level  
Output Timing Reference Level  
1.5  
1.5  
V
VZ ≈ 1.5V  
D.U.T.  
(Bipolar Supply)  
Ceff = 50 pf  
NOTES:  
VZ is programmable from -2V to +7V.  
IOL & IOH programmable from 0 to 16mA.  
Tester Impedance Z0 = 75 Ω.  
VZ is typically the midpoint of VOH and VOL.  
IOL & IOH are adjusted to simulate a typical resistive load circuit.  
ATE tester includes jig capacitance.  
IOH  
Current Source  
White Microelectronics • Phoenix, AZ • (602) 437-1520  
4
WS128K32V-XXX  
FIG. 4  
TIMING WAVEFORM - READ CYCLE  
tRC  
ADDRESS  
CS  
tAA  
tRC  
tCHZ  
tACS  
tCLZ  
ADDRESS  
tAA  
OE  
tOE  
tOLZ  
tOH  
tOHZ  
DATA I/O  
DATA I/O  
PREVIOUS DATA VALID  
DATA VALID  
DATA VALID  
HIGH IMPEDANCE  
READ CYCLE 1 (CS = OE = V , WE = V  
)
READ CYCLE 2 (WE = V )  
IH  
IL IH  
FIG. 5  
WRITE CYCLE - WE CONTROLLED  
tWC  
ADDRESS  
tAW  
tAH  
tCW  
CS  
WE  
tAS  
tWP  
tOW  
tDH  
tWHZ  
tDW  
DATA I/O  
DATA VALID  
WRITE CYCLE 1, WE CONTROLLED  
FIG. 6  
WRITE CYCLE - CS CONTROLLED  
tWC  
ADDRESS  
WS32K32-XHX  
tCW  
tAW  
tAH  
tAS  
CS  
tWP  
WE  
tDW  
tDH  
DATA I/O  
DATA VALID  
WRITE CYCLE 2, CS CONTROLLED  
White Microelectronics • (602) 437-1520 • www.whiteedc.com  
5
WS128K32V-XXX  
PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)  
27.3 (1.075) ± 0.25 (0.010) SQ  
PIN 1 IDENTIFIER  
SQUARE PAD  
ON BOTTOM  
25.4 (1.0) TYP  
4.34 (0.171)  
MAX  
3.81 (0.150)  
± 0.13 (0.005)  
1.42 (0.056) ± 0.13 (0.005)  
0.76 (0.030) ± 0.13 (0.005)  
2.54 (0.100)  
TYP  
1.27 (0.050) TYP DIA  
15.24 (0.600) TYP  
25.4 (1.0) TYP  
0.46 (0.018) ± 0.05 (0.002) DIA  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
White Microelectronics • Phoenix, AZ • (602) 437-1520  
6
WS128K32V-XXX  
PACKAGE 509: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T)  
25.15 (0.990) ± 0.26 (0.010) SQ  
4.57 (0.180) MAX  
22.36 (0.880) ± 0.26 (0.010) SQ  
0.27 (0.011) ± 0.04 (0.002)  
Pin 1  
0.25 (0.010) REF  
R 0.25  
(0.010)  
24.03 (0.946)  
± 0.26 (0.010)  
0.19 (0.007)  
± 0.06 (0.002)  
1° / 7°  
1.0 (0.040)  
± 0.127 (0.005)  
23.87  
(0.940) REF  
DETAIL A  
1.27 (0.050) TYP  
SEE DETAIL "A"  
0.38 (0.015) ± 0.05 (0.002)  
20.3 (0.800) REF  
The White 68 lead G2T CQFP  
fills the same fit and function as  
the JEDEC 68 lead CQFJ or 68  
PLCC. But the G2T has the TCE  
and lead inspection advantage  
of the CQFP form.  
0.940"  
TYP  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
PACKAGE 519: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1U)  
25.27 (0.995) ± 0.13 (0.005) SQ  
3.56 (0.140) MAX  
23.88 (0.940) ± 0.25 (0.010) SQ  
0.25 (0.010)  
0.61 (0.024)  
± 0.15 (0.006)  
0.84 (0.033) REF  
DETAIL A  
SEE DETAIL "A"  
1.27 (0.050)  
0.38 (0.015) ± 0.05 (0.002)  
20.3 (0.800) REF  
The White 68 lead G1U CQFP  
fills the same fit and function as  
the JEDEC 68 lead CQFJ or 68  
PLCC. But the G1U has the TCE  
and lead inspection advantage  
of the CQFP form.  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
White Microelectronics • (602) 437-1520 • www.whiteedc.com  
7
WS128K32V-XXX  
ORDERING INFORMATION  
W S 128K 32 X V - XXX X X X  
LEAD FINISH:  
Blank = Gold plated leads  
A = Solder dip leads  
DEVICE GRADE:  
M= Military Screened -55°C to +125°C  
I = Industrial  
-40°C to +85°C  
0°C to +70°C  
C = Commercial  
PACKAGE TYPE:  
H1 = Ceramic Hex-In-line Package, HIP (Package 400)  
G2T = 22.4mm CQFP (Package 509)  
G1U = 23.8mm Low Profile CQFP (Package 519)  
ACCESS TIME (ns)  
Low Voltage Supply 3.3V ± 10%  
IMPROVEMENT MARK:  
N = No Connect at pins 8, 21, 28, 39 in HIP for upgrade.  
ORGANIZATION, 128Kx32  
User configurable as 256Kx16 or 512Kx8  
SRAM  
WHITE ELECTRONIC DESIGNS CORP.  
White Microelectronics • Phoenix, AZ • (602) 437-1520  
8

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