WS128K32V-25H1CA 概述
128Kx32 3.3V SRAM MULTICHIP PACKAGE 128Kx32 3.3V SRAM多芯片封装
WS128K32V-25H1CA 数据手册
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PDF下载WS128K32V-XXX
128Kx32 3.3V SRAM MULTICHIP PACKAGE PRELIMINARY*
FEATURES
■ 3.3 Volt Power Supply
■ Low Power CMOS
■ Access Times of 15**, 17, 20, 25, 35ns
■ Low Voltage Operation
■ Packaging
■ TTL Compatible Inputs and Outputs
• 66-pin, PGA Type, 1.075 inch square Hermetic Ceramic
HIP (Package 400)
■ Built-in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
• 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880 inch) square
(Package 509), 4.57mm (0.180 inch) high. Designed to fit
JEDEC 68 lead 0.990" CQFJ footprint (Fig. 2)
■ Weight
WS128K32V-XG2TX - 8 grams typical
WS128K32V-XG1UX - 5 grams typical
WS128K32V-XH1X - 13 grams typical
• 68 lead, Hermetic CQFP (G1U), 23.8mm (0.940 inch)
square (Package 509), 3.56mm (0.140 inch) high.
■ Organized as 128Kx32; User Configurable as 256Kx16 or
*
This data sheet describes a product that is not fully qualified or
characterized and is subject ot change without notice.
512Kx8
■ Commercial, Industrial and Military Temperature Ranges
** Commercial and Industrial temperature ranges only.
FIG. 1 PIN CONFIGURATION FOR WS128K32NV-XH1X
TOP VIEW
PIN DESCRIPTION
1
12
23
34
45
56
I/O0-31
A0-16
WE1-4
CS1-4
OE
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
I/O8
I/O9
I/O10
A13
WE2
CS2
GND
I/O11
A10
I/O15
I/O14
I/O13
I/O12
OE
I/O24
I/O25
I/O26
A6
VCC
CS4
WE4
I/O27
A3
I/O31
I/O30
I/O29
I/O28
A0
Output Enable
Power Supply
Ground
VCC
GND
NC
A14
A7
Not Connected
A15
A11
NC
NC
A4
A1
BLOCK DIAGRAM
A16
A12
WE1
I/O7
I/O6
I/O5
I/O4
A8
A5
A2
WE1CS1
WE2CS2
WE3CS3
WE4CS4
NC
VCC
CS1
NC
A9
WE3
CS3
GND
I/O19
I/O23
I/O22
I/O21
I/O20
OE
0-16
A
I/O0
I/O1
I/O2
I/O16
I/O17
I/O18
128K x 8
128K x 8
128K x 8
128K x 8
I/O3
8
8
8
8
11
22
33
44
55
66
I/O16-23
I/O24-31
I/O0-7
I/O8-15
April 2001 Rev. 2
White Microelectronics • (602) 437-1520 • www.whiteedc.com
1
WS128K32V-XXX
FIG. 2 PIN CONFIGURATION FOR WS128K32V-XG2TX AND WS128K32V-XG1UX
TOP VIEW
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-16
WE1-4
CS1-4
OE
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
9
8
7
6
5
4
3
2
1
68 67 66 65 64 63 62 61
60
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
0
1
2
3
4
5
6
7
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
VCC
GND
NC
GND
Not Connected
I/O
8
9
I/O
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
BLOCK DIAGRAM
WE1CS1
WE2CS2
WE3CS3
WE4CS4
OE
0-16
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
A
128K x 8
128K x 8
128K x 8
128K x 8
8
8
8
8
I/O16-23
I/O24-31
I/O0-7
I/O8-15
White Microelectronics • Phoenix, AZ • (602) 437-1520
2
WS128K32V-XXX
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
Parameter
Symbol
TA
Min
-55
-65
-0.5
Max
+125
+150
4.6
Unit
°C
°C
V
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
TSTG
VG
TJ
150
5.5
°C
V
VCC
-0.5
CAPACITANCE
(TA = +25°C)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
VCC
Min
3.0
Max
3.6
Unit
V
Parameter
Symbol
COE
Conditions
Max Unit
Supply Voltage
Input High Voltage
Input Low Voltage
OE capacitance
V
V
IN = 0 V, f = 1.0 MHz
IN = 0 V, f = 1.0 MHz
50
pF
pF
VIH
2.2
VCC + 0.3
+0.8
V
WE1-4 capacitance
HIP (PGA)
CWE
20
20
VIL
-0.3
V
CQFP G2T/G1U
CS1-4 capacitance
CCS
CI/O
CAD
V
IN = 0 V, f = 1.0 MHz
I/O = 0 V, f = 1.0 MHz
VIN = 0 V, f = 1.0 MHz
20
20
50
pF
pF
pF
Data I/O capacitance
V
Address input capacitance
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(VCC = 3.3V ±0.3V, VSS = 0V, TA = -55°C to +125°C)
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
Output Leakage Current
ILI
ILO
VIN = GND to VCC
10
µA
µA
mA
mA
V
CS = VIH, OE = VIH, VOUT = GND to VCC
CS = VIL, OE = VIH, f = 5MHz
CS = VIH, OE = VIH, f = 5MHz
IOL = 8mA
10
500
32
Operating Supply Current (x 32 Mode)
Standby Current
ICC x 32
ISB
Output Low Voltage
VOL
0.4
Output High Voltage
VOH
IOH = -4.0mA
2.4
V
White Microelectronics • (602) 437-1520 • www.whiteedc.com
3
WS128K32V-XXX
AC CHARACTERISTICS
(VCC = 3.3V, TA = -55°C to +125°C)
Parameter
Symbol
-15*
-17
-20
-25
Max
-35
Units
Read Cycle
Min Max Min Max
Min
Max Min
Min Max
Read Cycle Time
tRC
tAA
15
0
17
0
20
25
35
35
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
15
17
20
25
Output Hold from Address Change
Chip Select Access Time
tOH
0
0
tACS
tOE
15
10
17
11
20
12
5
25
15
35
20
5
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
tCLZ1
tOLZ1
tCHZ1
tOHZ1
5
5
5
5
5
5
5
5
8
8
9
9
10
10
12
12
15
15
1. This parameter is guaranteed by design but not tested.
*
Commercial and Industrial only.
AC CHARACTERISTICS
(VCC = 3.3V, TA = -55°C to +125°C)
Parameter
Symbol
-15*
-17
-20
-25
-35
Units
Write Cycle
Min Max Min Max
Min
20
15
15
12
15
0
Max
Min Max
Min
35
30
30
18
30
0
Max
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
tAS
15
13
13
10
13
0
17
14
14
11
14
0
25
20
20
15
20
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
tAH
0
0
0
0
0
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
tOW1
tWHZ1
tDH
5
5
5
5
5
8
9
10
10
15
0
0
0
0
0
1. This parameter is guaranteed by design but not tested.
*
Commercial and Industrial only.
AC TEST CONDITIONS
FIG. 3
AC TEST CIRCUIT
IOL
Parameter
Typ
Unit
Current Source
Input Pulse Levels
VIL = 0, VIH = 3.0
V
ns
V
Input Rise and Fall
5
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
V
VZ ≈ 1.5V
D.U.T.
(Bipolar Supply)
Ceff = 50 pf
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
IOH
Current Source
White Microelectronics • Phoenix, AZ • (602) 437-1520
4
WS128K32V-XXX
FIG. 4
TIMING WAVEFORM - READ CYCLE
tRC
ADDRESS
CS
tAA
tRC
tCHZ
tACS
tCLZ
ADDRESS
tAA
OE
tOE
tOLZ
tOH
tOHZ
DATA I/O
DATA I/O
PREVIOUS DATA VALID
DATA VALID
DATA VALID
HIGH IMPEDANCE
READ CYCLE 1 (CS = OE = V , WE = V
)
READ CYCLE 2 (WE = V )
IH
IL IH
FIG. 5
WRITE CYCLE - WE CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS
WE
tAS
tWP
tOW
tDH
tWHZ
tDW
DATA I/O
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
FIG. 6
WRITE CYCLE - CS CONTROLLED
tWC
ADDRESS
WS32K32-XHX
tCW
tAW
tAH
tAS
CS
tWP
WE
tDW
tDH
DATA I/O
DATA VALID
WRITE CYCLE 2, CS CONTROLLED
White Microelectronics • (602) 437-1520 • www.whiteedc.com
5
WS128K32V-XXX
PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)
27.3 (1.075) ± 0.25 (0.010) SQ
PIN 1 IDENTIFIER
SQUARE PAD
ON BOTTOM
25.4 (1.0) TYP
4.34 (0.171)
MAX
3.81 (0.150)
± 0.13 (0.005)
1.42 (0.056) ± 0.13 (0.005)
0.76 (0.030) ± 0.13 (0.005)
2.54 (0.100)
TYP
1.27 (0.050) TYP DIA
15.24 (0.600) TYP
25.4 (1.0) TYP
0.46 (0.018) ± 0.05 (0.002) DIA
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Microelectronics • Phoenix, AZ • (602) 437-1520
6
WS128K32V-XXX
PACKAGE 509: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T)
25.15 (0.990) ± 0.26 (0.010) SQ
4.57 (0.180) MAX
22.36 (0.880) ± 0.26 (0.010) SQ
0.27 (0.011) ± 0.04 (0.002)
Pin 1
0.25 (0.010) REF
R 0.25
(0.010)
24.03 (0.946)
± 0.26 (0.010)
0.19 (0.007)
± 0.06 (0.002)
1° / 7°
1.0 (0.040)
± 0.127 (0.005)
23.87
(0.940) REF
DETAIL A
1.27 (0.050) TYP
SEE DETAIL "A"
0.38 (0.015) ± 0.05 (0.002)
20.3 (0.800) REF
The White 68 lead G2T CQFP
fills the same fit and function as
the JEDEC 68 lead CQFJ or 68
PLCC. But the G2T has the TCE
and lead inspection advantage
of the CQFP form.
0.940"
TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 519: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1U)
25.27 (0.995) ± 0.13 (0.005) SQ
3.56 (0.140) MAX
23.88 (0.940) ± 0.25 (0.010) SQ
0.25 (0.010)
0.61 (0.024)
± 0.15 (0.006)
0.84 (0.033) REF
DETAIL A
SEE DETAIL "A"
1.27 (0.050)
0.38 (0.015) ± 0.05 (0.002)
20.3 (0.800) REF
The White 68 lead G1U CQFP
fills the same fit and function as
the JEDEC 68 lead CQFJ or 68
PLCC. But the G1U has the TCE
and lead inspection advantage
of the CQFP form.
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
White Microelectronics • (602) 437-1520 • www.whiteedc.com
7
WS128K32V-XXX
ORDERING INFORMATION
W S 128K 32 X V - XXX X X X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
M= Military Screened -55°C to +125°C
I = Industrial
-40°C to +85°C
0°C to +70°C
C = Commercial
PACKAGE TYPE:
H1 = Ceramic Hex-In-line Package, HIP (Package 400)
G2T = 22.4mm CQFP (Package 509)
G1U = 23.8mm Low Profile CQFP (Package 519)
ACCESS TIME (ns)
Low Voltage Supply 3.3V ± 10%
IMPROVEMENT MARK:
N = No Connect at pins 8, 21, 28, 39 in HIP for upgrade.
ORGANIZATION, 128Kx32
User configurable as 256Kx16 or 512Kx8
SRAM
WHITE ELECTRONIC DESIGNS CORP.
White Microelectronics • Phoenix, AZ • (602) 437-1520
8
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