WS512K8-20 [ETC]
512Kx8 SRAM MODULE, SMD 5962-92078; 512Kx8 SRAM模块， SMD 5962-92078
| 型号： | WS512K8-20 |
| 厂家： | 
ETC |
| 描述： | 512Kx8 SRAM MODULE, SMD 5962-92078 |
| 文件： | 总6页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WS512K8-XCX
HI-RELIABILITY PRODUCT
512Kx8 SRAM MODULE, SMD 5962-92078
FEATURES
■ Access Times 20, 25, 35, 45ns
FIG. 1
PIN CONFIGURATION
TOP VIEW
■ Standard Microcircuit Drawing, 5962-92078
■ MIL-STD-883 Compliant Devices Available
■ Rad Tolerant Devices Available
■ JEDEC Standard 32 pin, Hermetic Ceramic DIP (Package 300)
■ Commercial, Industrial andMilitary Temperature Range
(-55°C to +125°C)
A18
A16
A14
A12
A7
1
32
VCC
2
31 A15
30 A17
29 WE
28 A13
27 A8
3
4
5
A6
6
A5
7
26 A9
■ Organized as 512K x 8
A4
8
25 A11
24 OE
23 A10
22 CS
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
■ 5 Volt Power Supply
A3
9
A2
10
11
12
13
14
15
16
■ Low Power CMOS
A1
A0
■ TTL Compatible Inputs and Outputs
■ Battery Back-Up Operation
I/O0
I/O1
I/O2
GND
PIN DESCRIPTION
A0-18
Address Inputs
Data Input/Output
Chip Select
I/O0-7
CS
OE
Output Enable
Write Enable
+5.0V Power
Ground
WE
VCC
GND
BLOCK DIAGRAM
A0-16
I/O0-7
WE
OE
128K x 8
128K x 8
128K x 8
128K x 8
A17
A18
Decoder
CS
1
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
May 1999 Rev. 2
WS512K8-XCX
ABSOLUTE MAXIMUM RATINGS
TRUTH TABLE
Parameter
Symbol
TA
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
Unit
°C
°C
V
CS
H
L
L
L
OE
X
L
X
H
WE
X
H
L
H
Mode
Standby
Read
Write
Out Disable
Data I/O
High Z
Data Out
Data In
High Z
Power
Standby
Active
Active
Active
Operating Temperature
Storage Temperature
Signal Voltage Relative to GND
Junction Temperature
Supply Voltage
TSTG
VG
TJ
°C
V
VCC
-0.5
7.0
CAPACITANCE
(TA = +25°C)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
VCC
Min
4.5
Max
5.5
Unit
V
Parameter
Symbol
Condition
Max Unit
Supply Voltage
Input capacitance
Output capicitance
CIN
V
IN = 0V, f = 1.0MHz
45
45
pF
pF
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
VIH
2.2
VCC + 0.3
+0.8
V
COUT
VOUT = 0V, f = 1.0MHz
VIL
-0.5
-55
V
This parameter is guaranteed by design but not tested.
TA
+125
°C
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter
Symbol
Conditions
-20
Min
-25
-35
-45
Units
Max Min
10
10
210
80
0.4
2.4
Max
10
10
210
60
0.4
Min Max Min
Max
10
10
210
55
0.4
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
ILI
ILO
ICC
VCC = 5.5, VIN = GND to VCC
CS = VIH, OE = VIH, VOUT = GND to VCC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
CS = VIH, OE = VIH, f = 5MHz
IOL = 8mA, Vcc = 4.5
10
10
210
60
µA
µA
mA
mA
V
ISB
VOL
VOH
0.4
IOH = -4.0mA, Vcc = 4.5
2.4
2.4
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DATA RETENTION CHARACTERISTICS
(TA = -55°C to +125°C)
Parameter
Symbol
Conditions
-20
-25
-35
-45
Units
Min Typ Max Min Typ Max
Min Typ Max Min Typ Max
Data Retention Supply Voltage
Data Retention Current
VDR
CS ≥ VCC -0.2V 2.0
5.5
2.0
5.5
2.0
5.5 2.0
8.0 12.8
5.5
V
ICCDR1
VCC = 3V
8.0 12.8
8.0 12.8
8.0 12.8
mA
AC TEST CONDITIONS
FIG. 2
AC TEST CIRCUIT
Parameter
Input Pulse Levels
Typ
Unit
IOL
Current Source
VIL = 0, VIH = 3.0
V
ns
V
Input Rise and Fall
5
Input and Output Reference Level
Output Timing Reference Level
1.5
1.5
V
VZ
≈ 1.5V
D.U.T.
(Bipolar Supply)
Ceff = 50 pf
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOH
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Current Source
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
2
WS512K8-XCX
AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter
Read Cycle
Symbol
-20
-25
-35
-45
Units
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tRC
tAA
20
25
35
45
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
20
25
35
45
Output Hold from Address Change
Chip Select Access Time
tOH
3
3
3
3
tACS
tOE
20
10
25
10
35
25
45
35
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
tCLZ1
tOLZ1
tCHZ1
tOHZ1
3
0
3
0
3
0
3
0
15
12
17
15
20
20
30
25
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(VCC = 5.0V, GND =0V, TA = -55°C to +125°C)
Parameter
Symbol
-20
-25
-35
-45
Units
Write Cycle
Min
20
16
16
15
16
2
Max
Min
25
20
20
15
20
2
Max
Min
35
25
25
20
25
2
Max
Min
45
30
30
25
30
2
Max
Write Cycle Time
tWC
tCW
tAW
tDW
tWP
tAS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
tAH
2
2
2
2
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
tOW1
tWHZ1
tDH
4
5
5
5
10
0
15
0
20
0
25
1
1
1
1
1. This parameter is guaranteed by design but not tested.
3
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WS512K8-XCX
FIG. 3
TIMING WAVEFORM - READ CYCLE
tRC
ADDRESS
CS
tAA
tRC
tCHZ
tACS
tCLZ
ADDRESS
tAA
OE
tOE
tOLZ
tOH
tOHZ
DATA I/O
DATA I/O
PREVIOUS DATA VALID
DATA VALID
DATA VALID
HIGH IMPEDANCE
READ CYCLE 1 (CS = OE = V , WE = V
)
READ CYCLE 2 (WE = V )
IH
IL IH
FIG. 4
WRITE CYCLE - WE CONTROLLED
tWC
ADDRESS
tAW
tAH
tCW
CS
WE
tAS
tWP
tOW
tDH
tWHZ
tDW
DATA I/O
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
FIG. 5
WRITE CYCLE - CS CONTROLLED
tWC
ADDRESS
WS32K32-XHX
tCW
tAW
tAH
tAS
CS
tWP
WE
tDW
tDH
DATA I/O
DATA VALID
WRITE CYCLE 2, CS CONTROLLED
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
4
WS512K8-XCX
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.4 (1.670) ± 0.4 (0.016)
15.04 (0.592)
± 0.3 (0.012)
4.34 (0.171) ± 0.79 (0.031)
3.2 (0.125) MIN
PIN 1 IDENTIFIER
0.25 (0.010)
± 0.05 (0.002)
0.84 (0.033)
± 0.4 (0.014)
15.25 (0.600)
2.5 (0.100)
TYP
1.27 (0.050)
± 0.1 (0.005)
0.46 (0.018)
± 0.05 (0.002)
± 0.25 (0.010)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
5
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
WS512K8-XCX
ORDERING INFORMATION
W S 512K 8 - XXX C X X
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
DEVICE GRADE:
Q = MIL-STD-883 Compliant
M = Military Screened -55°C to +125°C
I = Industrial
-40°C to +85°C
0°C to +70°C
C = Commercial
PACKAGE:
C = Ceramic 0.600" DIP (Package 300)
ACCESS TIME (ns)
ORGANIZATION, 512K x 8
SRAM
WHITE MICROELECTRONICS
DEVICE TYPE
SPEED
PACKAGE
SMD NO.
512K x 8 SRAM
512K x 8 SRAM
512K x 8 SRAM
512K x 8 SRAM
45ns
35ns
25ns
20ns
32 pin DIP
32 pin DIP
32 pin DIP
32 pin DIP
5962-92078 06HTX
5962-92078 07HTX
5962-92078 08HTX
5962-92078 09HTX
White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520
6
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