XB4301D [ETC]

锂电池保护IC; チューナ用IC


型号：	XB4301D
厂家：	ETC
描述：	锂电池保护IC チューナ用IC 电池
文件：	总12页 (文件大小：743K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

XB4301D

SUNFAN

One Cell Lithium-ion/Polymer Battery Protection IC

____________________________________________________________________________________________________________________________

GENERAL DESCRIPTION

The XB4301 series product is a high

integration solution for lithium-

ion/polymer battery protection. XB4301

contains advanced power MOSFET,

high-accuracy voltage detection circuits

and delay circuits. XB4301 is put into an

ultra-small SOT23-5 package and only

one external component makes it an

ideal solution in limited space of battery

pack.

FEATURES

Protection of Charger Reverse

Connection

Protection of Battery Cell Reverse

Connection

Integrate Advanced Power MOSFET

withEquivalent of 54m R_DS(ON)

Ω

Ultra-small SOT23-5 Package

Only One External Capacitor

Required

Over-temperature Protection

Overcharge Current Protection

Three-step Overcurrent Detection:

-Overdischarge Current 1

-Overdischarge Current 2

-Load Short Circuiting

XB4301 has all the protection functions

required in the battery application including

overcharging, overdischarging, overcurrent

and load short circuiting protection etc. The

accurate overcharging detection voltage

ensures safe and full utilization charging.

The low standby current drains little current

from the cell while in storage.

The device is not only targeted for digital

cellular phones, but also for any other

Li-Ion and Li-Poly battery-powered

information appliances requiring long-

term battery life.

Charger Detection Function

0V Battery Charging Function

- Delay Times are generated inside

High-accuracy Voltage Detection

Low Current Consumption

- Operation Mode: 2.8

- Power-down Mode: 0.1

A typ.

A max.

RoHS Compliant and Lead (Pb) Free

APPLICATIONS

•

One-Cell Lithium-ion Battery Pack

•

Lithium-Polymer Battery Pack

BAT +

XB4301

VDD

Battery

VCC

0.1uF

BAT -

GND

Figure 1. Typical Application Circuit

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ORDERING INFORMATION

____________________________________________________________________________________________________________________________

Overcharg Overcharge Overdischarge Overdischarge

Overcurrent

Detection

Current

e Detection

Voltage

Release

Voltage

Detection

Voltage

Release

Voltage

PART

NUMBER age

Pack

Top Mark

[I^OV1] (A)

[V^CU] (V)

[VCL] (V)

[VDL] (V)

[VDR] (V)

SOT

XB4301D

23-5

4.250

4.10

2.90

3.0

2.5

4301DYW(note)

Note: “YW” is manufacture date code, “Y” means the year, “W” means the week

PIN CONFIGURATION

VCC GND VDD

SOT23-5

Figure 2. PIN Configuration

PIN DESCRIPTION

XB4301 PIN

NUMBER

PIN NAME

PIN DESCRIPTION

VCC

GND

VDD

Core circuit power supply

Ground, connect the negative terminal of the battery to this pin

Power Supply

The negative terminal of the battery pack. The internal FET switch

connects this terminal to GND

4,5

ABSOLUTE MAXIMUM RATINGS

(Note: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating

conditions for long periods may affect device reliability.)

PARAMETER

Input voltage between VCC and GND

VDD input pin voltage

VALUE

-0.3 to +6

-0.3 to VCC+0.3

-6 to 10

UNIT

VM input pin voltage

Operating Ambient Temperature

Maximum Junction Temperature

-40 to 85

125

°C

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Storage Temperature

Lead Temperature ( Soldering, 10 sec)

Power Dissipation at T=25°C

____________________________________________________________________________________________________________________________

-55 to 150

300

°C

0.4

250

°C/W

Package Thermal Resistance (Junction to Ambient)

θJA

Package Thermal Resistance (Junction to Case)

ESD

130

2000

ELECTRICAL CHARACTERISTICS

Typicals and limits appearing in normal type apply for T = 25 C, unless otherwise specified

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Detection Voltage

4.20

4.30

4.25

Overcharge Detection Voltage

4.05

2.8

4.15

3.0

4.10

2.9

Overcharge Release Voltage

Overdischarge Detection Voltage

2.9

3.1

3.0

Overdischarge Release Voltage

Charger Detection Voltage

-0.07

-0.12

-0.2

CHA

Detection Current

Overdischarge Current1 Detection

=3.5V

1.25

2.5

3.75

IOV1

IOV2

Overdischarge Current2 Detection

=3.5V

Load Short-Circuiting

Detection

=3.5V

SHORT

Current Consumption

Current Consumption in Normal

Operation

=3.5V

2.8

0.1

OPE

VM =0V

=2.0V

Current Consumption in power

Down

PDN

μA

VM pin floating

VM Internal Resistance

Internal Resistance between

=3.5V

320

100

VMD

Ω

VM and V

VM=1.0V

=2.0V

Internal Resistance between VM

and GND

VMS

VM=1.0V

FET on Resistance

Equivalent FET on Resistance

=3.6V

=1.0A

DS(ON)

Ω

Over Temperature Protection

120

SHD+

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Over Temperature Recovery Degree

____________________________________________________________________________________________________________________________

100

SHD-

Detection Delay Time

Overcharge Voltage Detection

Delay Time

0.17

0.25

0.4

Overdischarge Voltage Detection

Delay Time

Overdischarge Current 1 Detection

Delay Time

Overdischarge Current 2 Detection

Delay Time

=3.5V

IOV1

IOV2

Load Short-Circuiting Detection

Delay Time

SHORT

Figure 3. Functional Block Diagram

FUNCTIONAL DESCRIPTION

The XB4301 monitors the voltage and

current of a battery and protects it from

being damaged due to overcharge voltage,

overdischarge voltage, overdischarge

current, and short circuit conditions by

disconnecting the battery from the load

or charger. These functions are required in

order to operate the battery cell within

specified limits.

The device requires only one external

capacitor. The MOSFET is integrated and

its R_DS(ON)is as low as 54 m

Ω typical.

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load is connected and discharging starts,

the chip does not return to the normal

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Normal operating mode

If no exception condition is detected,

charging and discharging can be carried

out freely. This condition is called the

normal operating mode.

____________________________________________________________________________________________________________________________

condition.

Remark If the battery is charged to a voltage higher

than the overcharge detection voltage (V^CU) and

the battery voltage does not drops below the

overcharge detection voltage (VCU) even when a

heavy load, which causes an overcurrent, is

connected, the overcurrent 1 and overcurrent 2 do

not work until the battery voltage drops below the

overcharge detection voltage (VCU). Since an actual

battery has, however, an internal impedance of

several dozens of mΩ, and the battery voltage

drops immediately after a heavy load which causes

an overcurrent is connected, the overcurrent 1 and

overcurrent 2 work. Detection of load short-

circuiting works regardless of the battery voltage.

Overcharge Condition

When the battery voltage becomes higher

than the overcharge detection voltage (V^CU)

during charging under normal condition

and the state continues for the overcharge

detection delay time (t^CU) or longer, the

XB4301 turns the charging control FET off

to stop charging. This condition is called

the overcharge condition. The overcharge

condition is released in the following two

cases:

Overdischarge Condition

1, When the battery voltage drops below

the overcharge release voltage (V^CL), the

XB4301 turns the charging control FET on

and returns to the normal condition.

When the battery voltage drops below the

overdischarge detection voltage (V^DL)

during discharging under normal condition

and it continues for the overdischarge

detection delay time (t^DL) or longer, the

XB4301 turns the discharging control FET

off and stops discharging. This condition is

called overdischarge condition. After the

discharging control FET is turned off, the

VM pin is pulled up by the ^R^VMDresistor

between VM and VDD in XB4301.

Meanwhile when VM is bigger than 1.5

V (typ.) (the load short-circuiting detection

voltage), the current of the chip is reduced

to the power-down current (^I^PDN). This

condition is called power-down condition.

The VM and VDD pins are shorted by the

R^VMDresistor in the IC under the

overdischarge and power-down conditions.

The power-down condition is released

when a charger is connected and the

potential difference between VM and VDD

becomes 1.3 V (typ.) or higher (load short-

circuiting detection voltage). At this time,

the FET is still off. When the battery

voltage becomes the overdischarge

detection voltage (V^DL) or higher (see note),

the XB4301 turns the FET on and changes

2, When a load is connected and

discharging starts, the XB4301 turns the

charging control FET on and returns to the

normal condition. The release mechanism

is as follows: the discharging current flows

through an internal parasitic diode of the

charging FET immediately after a load is

connected and discharging starts, and the

VM pin voltage increases about 0.7 V

(forward voltage of the diode) from the

GND pin voltage momentarily. The XB4301

detects this voltage and releases the

overcharge condition. Consequently, in the

case that the battery voltage is equal to or

lower than the overcharge detection

voltage (V^CU), the XB4301 returns to the

normal condition immediately, but in the

case the battery voltage is higher than the

overcharge detection voltage (V^CU),the chip

does not return to the normal condition

until the battery voltage drops below the

overcharge detection voltage (V^CU) even if

the load is connected. In addition, if the VM

pin voltage is equal to or lower than the

overcurrent 1 detection voltage when a

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delay time (t^CU) or longer, the XB4301 turns

the charging control FET off and stops

charging. This action is called abnormal

charge current detection.

Abnormal charge current detection works

when the discharging control FET is on

and the VM pin voltage drops below the

charger detection voltage (V^CHA). When an

abnormal charge current flows into a

battery in the overdischarge condition, the

XB4301 consequently turns the charging

control FET off and stops charging after

the battery voltage becomes the

SUNFAN

to the normal condition from the

____________________________________________________________________________________________________________________________

overdischarge condition.

Remark If the VM pin voltage is no less than the

charger detection voltage (V^CHA), when the battery

under overdischarge condition is connected to a

charger, the overdischarge condition is released

(the discharging control FET is turned on) as usual,

provided that the battery voltage reaches the

overdischarge release voltage (VDU) or higher.

Overcurrent Condition

When the discharging current becomes

equal to or higher than a specified value

(the VM pin voltage is equal to or higher

than the overcurrent detection voltage)

during discharging under normal condition

and the state continues for the overcurrent

detection delay time or longer, the XB4301

turns off the discharging control FET to

stop discharging. This condition is called

overcurrent condition. (The overcurrent

includes overcurrent 1, overcurrent 2, or

load short-circuiting.)

The VM and GND pins are shorted

internally by the ^RVMS resistor under the

overcurrent condition. When a load is

connected, the VM pin voltage equals the

VDD voltage due to the load.

overdischarge detection voltage and the

overcharge detection delay time (t^CU)

elapses.

Abnormal charge current detection is

released when the voltage difference

between VM pin and GND pin becomes

lower than the charger detection voltage

(V^CHA) by separating the charger. Since the

0 V battery charging function has higher

priority than the abnormal charge current

detection function, abnormal charge

current may not be detected by the product

with the 0 V battery charging function while

the battery voltage is low.

The overcurrent condition returns to the

normal condition when the load is released

and the impedance between the B+ and B-

pins becomes higher than the automatic

recoverable impedance. When the load is

removed, the VM pin goes back to the

GND potential since the VM pin is shorted

the GND pin with the ^R^VMSresistor.

Detecting that the VM pin potential is lower

than the overcurrent 1 detection voltage

(V^IOV1), the IC returns to the normal

condition.

Load Short-circuiting condition

If voltage of VM pin is equal or below

short circuiting protection voltage (V_SHORT),

the XB4301 will stop discharging and

battery is disconnected from load. The

maximum delay time to switch current off is

t_SHORT. This status is released when voltage

of VM pin is higher than short protection

voltage (V_SHORT), such as when

disconnecting the load.

Delay Circuits

Abnormal Charge Current Detection

If the VM pin voltage drops below the

charger detection voltage (V^CHA) during

charging under the normal condition and it

continues for the overcharge detection

The detection delay time for overdischarge

current 2 and load short-circuiting starts

when overdischarge current 1 is detected.

As soon as overdischarge current 2 or load

short-circuiting is detected over detection

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delay time for overdischarge current 2 or

load short- circuiting, the XB4301 stops

discharging. When battery voltage falls

below overdischarge detection voltage due

to overdischarge current, the XB4301 stop

discharging by overdischarge current

detection. In this case the recovery of battery

voltage is so slow that if battery voltage

after overdischarge voltage detection delay

time is still lower than overdischarge

detection voltage, the XB4301 shifts to

power-down.

(V^0CHA) or higher is connected between B+

and B- pins, the charging control FET gate

is fixed to VDD potential. When the voltage

between the gate and the source of the

charging control FET becomes equal to or

higher than the turn-on voltage by the

charger voltage, the charging control FET

is turned on to start charging. At this time,

the discharging control FET is off and the

charging current flows through the internal

parasitic diode in the discharging control

FET. If the battery voltage becomes equal

to or higher than the overdischarge release

voltage (V^DU), the normal condition returns.

Note

(1) Some battery providers do not recommend

charging of completely discharged batteries. Please

refer to battery providers before the selection of 0 V

battery charging function.

(2) The 0V battery charging function has higher

priority than the abnormal charge current detection

function. Consequently, a product with the 0 V

battery charging function charges a battery and

abnormal charge current cannot be detected during

the battery voltage is low (at most 1.8 V or lower).

(3) When a battery is connected to the IC for the

first time, the IC may not enter the normal condition

in which discharging is possible. In this case, set

the VM pin voltage equal to the GND voltage (short

the VM and GND pins or connect a charger) to

enter the normal condition.

Figure 4. Overcurrent delay time

0V Battery Charging Function ^{(1) (2) (3)}

This function enables the charging of a

connected battery whose voltage is 0 V by

self-discharge. When a charger having 0 V

battery start charging charger voltage

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TIMING CHART

____________________________________________________________________________________________________________________________

1． Overcharge and overdischarge detection

VCU

VCU-VHC

Battery

voltage

V^DL+VDH

VDL

DISCHARGE

OFF

CHARGE

OFF

V^DD

Vov1

V^SS

V^CHA

Charger connection

Load connection

tCL

t^CU

(1)

(2)

(1)

(3)

Figure5-1 Overcharge and Overdischarge Voltage Detection

2． Overdischarge current detection

Battery

voltage

VCU

VCU^-VHC

VDL+VDH

VDL

DISCHARGE

OFF

V^DD

VSHORT

Vov2

Vov1

VSS

Charger connection

Load connection

tIOV2

tIOV1

tSHORT

(1)

(4)

(1)

(4)

(1)

(4)

(1)

Figure5-2 Overdischarge Current Detection

Remark: (1) Normal condition (2) Overcharge voltage condition (3) Overdischarge voltage condition (4)

Overcurrent condition

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3． Charger Detection

____________________________________________________________________________________________________________________________

VCU

VCU-VHC

Battery

voltage

V^DL+VDH

VDL

DISCHARGE

OFF

V^DD

VSS

VCHA

Charger connection

Load connection

t^DL

(1)

(3)

(1)

Figure5-3 Charger Detection

4． Abnormal Charger Detection

VCU

VCU-VHC

Battery

voltage

V^DL+VDH

V^DL

DISCHARGE

OFF

CHARGE

OFF

V^DD

V^SS

VCHA

Charger connection

Load connection

tCU

t^DL

(1)

(3)

(1)

(2)

(1)

Figure5-4 Abnormal Charger Detection

Remark: (1) Normal condition (2) Overcharge voltage condition (3) Overdischarge voltage condition (4)

Overcurrent condition

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XB4301D

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TYPICAL CHARACTERISTICS

____________________________________________________________________________________________________________________________

(Test based on XB4301D version, V_BAT= 3.6V, T_A= 25^°C unless otherwise specified)

Internal FET On-Resistance vs. Junction Temperature

Power Dissipation vs. Charging Current

TYPICAL APPLICATION

As shown in Figure 5, the bold line is the high density current path which must be kept as

short as possible. For thermal management, ensure that these trace widths are adequate. C is

a decoupling capacitor which should be placed as close as possible to XB4301.

BAT +

( B+/P+ )

XB4301

VDD

Charger

Battery

Load

VCC

0.1uF

BAT -

( P- )

GND

( B- )

Fig 5 XB301 in a Typical Battery Protection Circuit

Precautions

• Pay attention to the operating conditions for input/output voltage and load current so that the

power loss in XB4301 does not exceed the power dissipation of the package.

• Do not apply an electrostatic discharge to this XB4301 that exceeds the performance

ratings of the built-in electrostatic protection circuit.

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XB4301D

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PACKAGE OUTLINE

____________________________________________________________________________________________________________________________

SOT23-5 PACKAGE OUTLINE AND DIMENSIONS

DIMENSION

SYMB

IN INCHES

MILIMETERS

MIN MAX MIN MAX

1.050 1.250 0.041 0.049

0.000 0.100 0.000 0.004

1.050 1.150 0.041 0.045

0.300 0.400 0.012 0.016

0.100 0.200 0.004 0.008

2.820 3.020 0.111 0.119

1.500 1.700 0.059 0.067

2.650 2.950 0.104 0.116

0.950 TYP

1.800 2.000 0.071 0.079

0.700 REF 0.028 REF

0.300 0.600 0.012 0.024

0° 8° 0° 8°

0.037 TYP

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DISCLAIMER

____________________________________________________________________________________________________________________________

The information described herein is subject to change without notice.

Xysemi Inc. is not responsible for any problems caused by circuits or

diagrams described herein whose ralated industial properties,patents,or

other rights belong to third parties. The application circuit examples

explain typical applications of the products, and do not guarantee the

success of any specific mass-production design.

When the products described herein are regulated products subject to the

Wassenaar Arrangement or other arrangements, they may not be exported

without authorization from the appropriate governmental authority.

Use of the information described herein for other purposes and/or

reproduction or copying without express permission of Xysemi Inc. is

strictly prohibited.

The products described herein cannot be used as part of any device or

equipment affecting the human body,such as exercise equipment ,medical

equipment, security systems, gas equipment,or any aparatus installed in

airplanes and other vehicles,without prior written pemission of Xysemi Inc.

Although Xysemi Inc. exerts the greatest possible effort to ensure high

quality and reliability, the failure or malfunction of semiconductor may

occur. The use of these products should therefore give thorough

consideration to safty design,including redundancy, fire-prevention

measure and malfunction prevention, to prevent any accidents,fires,or

community damage that may ensue.

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XB4301D [ETC]

相关型号：

XB431-020.0M

XB431-050.0M

XB431-064.0M

XB432-020.0M

XB432-050.0M

XB432-064.0M

XB433-020.0M

XB433-050.0M

XB433-064.0M

XB441-050.0M

XB441-064.0M

XB442-020.0M