XN01509 [ETC]
TRANSISTOR | BJT | ARRAY | COMM EMITTER | NPN | 50V V(BR)CEO | 50MA I(C) | SOT-25 ; 晶体管| BJT |阵列| COMM辐射源| NPN | 50V V（ BR ） CEO | 50MA I（C ） | SOT- 25\n
| 型号： | XN01509 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | ARRAY | COMM EMITTER | NPN | 50V V(BR)CEO | 50MA I(C) | SOT-25
|
| 文件： | 总3页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN01509 (XN1509)
Silicon NPN epitaxial planer transistor
Unit: mm
For high-frequency amplification
2.8+0.2
1.5+0.25
-
0.3
0.65 0.15
-
0.05
0.65 0.15
5
1
2
Features
I
G
Two elements incorporated into one package.
(Emitter-coupled transistors)
Reduction of the mounting area and assembly cost by one half.
4
3
G
Basic Part Number of Element
2SC4561 × 2 elements
I
G
0.1 to 0.3
0.4 0.2
Absolute Maximum Ratings (Ta=25˚C)
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
I
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
50
Rating
50
V
of
Marking Symbol: AN
Internal Connection
5
50
V
element
mA
mW
˚C
PT
200
Tr1
5
1
2
Overall Junction temperature
Storage temperature
Tj
150
Tstg
–55 to +150
˚C
4
3
Tr2
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
VCBO
Conditions
min
50
50
5
typ
max
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
IC = 10µA, IE = 0
VCEO
VEBO
ICBO
ICEO
hFE
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCB = 10V, IE = 0
VCE = 10V, IB = 0
VCE = 10V, IC = 2mA
V
V
0.1
100
500
µA
µA
Collector cutoff current
Forward current transfer ratio
200
0.5
Forward current transfer hFE ratio
hFE (small/large)*1 VCE = 10V, IC = 2mA
0.99
0.06
250
1.5
Collector to emitter saturation voltage VCE(sat)
IC = 10mA, IB = 1mA
0.3
V
MHz
pF
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
Collector output capacitance
*1 Ratio between 2 elements
Cob
Note.) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
XN01509
PT — Ta
IC — VCE
IC — VBE
60
50
40
30
20
10
0
240
120
100
80
60
40
20
0
VCE=10V
Ta=25˚C
IB=300µA
25˚C
200
160
120
80
Ta=75˚C
–25˚C
250µA
200µA
150µA
100µA
50µA
40
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
40
80
120
160
)
0
2
4
6
8
10
12
( )
V
(
( )
V
Base to emitter voltage VBE
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
100
600
500
400
300
200
100
0
600
500
400
300
200
100
0
IC/IB=10
VCE=10V
VCB=10V
Ta=25˚C
30
10
Ta=75˚C
25˚C
3
1
–25˚C
0.3
0.1
Ta=75˚C
–25˚C
25˚C
0.03
0.01
1
3
10
30
100 300 1000
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Emitter current IE mA
Cob — VCB
6
5
4
3
2
1
0
f=1MHz
IE=0
Ta=25˚C
1
3
10
30
100
(
)
Collector to base voltage VCB
V
2
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2001 MAR
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