XN0611FH|XN611FH [ETC]
Composite Device - Composite Transistors ; 复合设备 - 复合晶体管\n
| 型号： | XN0611FH|XN611FH |
| 厂家： | 
ETC |
| 描述： | Composite Device - Composite Transistors
|
| 文件： | 总5页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN0611FH (XN611FH)
Silicon PNP epitaxial planar transistor
Unit: mm
+0.20
–0.05
1.9 0.1
(0.95) (0.95)
2.90
+0.10
For switching/digital circuits
0.16
–0.06
4
3
5
6
■ Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
2
1
• Reduction of the mounting area and assembly cost by one half
+0.10
–0.05
0.30
0.50
+0.10
–0.05
■ Basic Part Number
• UNR211F (UN211F) + UNR211H (UN211H)
10˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
1: Collector (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: Emitter (Tr2)
6: Emitter (Tr1)
Tr1
Tr2
Collector-base voltage
(Emitter open)
VCBO
−50
V
Mini6-G1 Package
Collector-emitter voltage
(Base open)
VCEO
−50
V
Marking Symbol: 4S
Collector current
IC
100
mA
V
−
Collector-base voltage
(Emitter open)
VCBO
−50
Internal Connection
4
5
2
6
Collector-emitter voltage
(Base open)
VCEO
−50
V
Tr1
1
Collector current
IC
PT
Tj
−100
300
mA
mW
°C
Tr2
3
Overall Total power dissipation
Junction temperature
150
Storage temperature
Tstg
−55 to +150
°C
Note) The part number in the parenthesis shows conventional part number.
Publication date: July 2003
SJJ00099BED
1
XN0611FH
■ Electrical Characteristics Ta = 25°C 3°C
• Tr1
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
IC = −10 µA, IE = 0
Min
−50
−50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
IC = −2 mA, IB = 0
V
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
VCE = −10 V, IC = −5 mA
− 0.1
− 0.5
−1.0
µA
µA
mA
ICEO
IEBO
hFE
30
VCE(sat) IC = −10 mA, IB = − 0.3 mA
− 0.25
V
VOH
VOL
R1
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
−4.9
−30%
V
Output voltage low-level
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
− 0.2
V
Input resistance
4.7
0.47
80
+30%
kΩ
Resistance ratio
R1 / R2
fT
Transition frequency
VCB = −10 V, IE = 1 mA, f = 200 MHz
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
• Tr2
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
IC = −10 µA, IE = 0
Min
−50
−50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
IC = −2 mA, IB = 0
V
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
VCE = −10 V, IC = −5 mA
− 0.1
− 0.5
− 0.5
µA
µA
mA
ICEO
IEBO
hFE
30
VCE(sat) IC = −10 mA, IB = − 0.3 mA
− 0.25
V
VOH
VOL
R1
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
−4.9
V
Output voltage low-level
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
− 0.2
+30%
0.27
V
Input resistance
−30%
2.2
0.22
80
kΩ
Resistance ratio
R1 / R2
fT
0.17
Transition frequency
VCB = −10 V, IE = 1 mA, f = 200 MHz
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
SJJ00099BED
2
XN0611FH
Common characteristics chart
PT Ta
500
400
300
200
100
0
0
40
80
120
160
(
)
Ambient temperature Ta °C
Characteristics charts of Tr1
IC VCE
VCE(sat) IC
hFE IC
−240
−100
−10
−1
160
120
80
IC / IB = 10
Ta = 25°C
VCE = −10 V
Ta = 75°C
IB = −1.0 mA
−0.9 mA
−0.8 mA
−0.7 mA
−0.6 mA
−200
−160
−120
−80
−40
0
25°C
−25°C
Ta = 75°C
−0.5 mA
25°C
−0.4 mA
−0.3 mA
−0.2 mA
−0.1
40
−25°C
−0.1 mA
−10 −12
−
0.01
−0.1
0
−1
0
−2
−4
−6
−8
−1
−10
−100
−10
−100
−1000
(
)
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
−100
−10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
−0.1
−1
−10
−100
−0.1
−1
)
Output current IO mA
−10
−100
(
)
Collector-base voltage VCB (V)
Input voltage VIN
V
(
SJJ00099BED
3
XN0611FH
Characteristics charts of Tr2
IC VCE
VCE(sat) IC
hFE IC
−120
−100
−10
240
200
160
120
80
IC / IB = 10
Ta = 25°C
VCE = −10 V
−100
−80
−60
−40
−20
0
IB = −0.5 mA
−0.4 mA
Ta = 75°C
25°C
−1
Ta = 75°C
25°C
−0.3 mA
−25°C
−0.2 mA
−0.1 mA
−0.1
−0.01
40
−25°C
0
−0.1
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
−1
−10
−100
(
)
V
(
)
Collector-emitter voltage VCE
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
VIN IO
6
5
4
3
2
1
0
−100
−10
f = 1 MHz
IE = 0
VO = −0.2 V
Ta = 25°C
Ta = 25°C
−1
−0.1
−0.01
−1
−10
−100
−0.1
−1
−10
−100
Collector-base voltage VCB (V)
(
)
Output current IO mA
SJJ00099BED
4
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
相关型号：
XN06213G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, MINI6-G3, 6 PIN
PANASONIC
©2020 ICPDF网 联系我们和版权申明