XP04683(XP4683) [ETC]
Composite Device - Composite Transistors ; 复合设备 - 复合晶体管\n
| 型号： | XP04683(XP4683) |
| 厂家： | 
ETC |
| 描述： | Composite Device - Composite Transistors
|
| 文件： | 总3页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XP04878
Silicon N-channel MOSFET
Unit: mm
+0.05
0.12
–0.02
0.2 0.05
For switching
5
6
4
3
■ Features
•
Allowing 2.5 V drive
1
2
• Incorporating a built-in gate protection-diode
•
S-Mini type 6-pin package, reduction of the mounting area and
assembly cost by one half
(0.65) (0.65)
1.3 0.1
2.0 0.1
10˚
■ Basic Part Number
• 2SK3539 × 2
1: Source (FET1)
2: Gate (FET1)
3: Drain (FET2)
EIAJ: SC-88
4: Source (FET2)
5: Gate (FET2)
6: Drain (FET1)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Drain-source surrender voltage
Gate-source voltage (Drain open)
Drain current
Symbol
VDSS
VGSO
ID
Rating
Unit
V
SMini6-G1 Package
50
7
Marking Symbol: 7Y
V
100
mA
mA
mW
°C
Internal Connection
Peak drain current
IDP
200
6
1
5
4
3
Total power dissipation
Channel temperature
Storage temperature
PT
150
Tch
150
Tstg
−55 to +150
°C
2
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VDSS
IDSS
Conditions
Min
Typ
Max
Unit
V
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
ID = 10 µA, VGS = 0
VDS = 50 V, VGS = 0
VGS 7 V, VDS = 0
50
0.9
20
1.0
5
µA
µA
V
IGSS
=
Vth
ID = 1 µA, VDS = 3 V
1.2
8
1.5
15
12
Drain-source ON resistance
RDS(on)
ID = 10 mA, VGS = 2.5 V
ID = 10 mA, VGS = 4.0 V
ID = 10 mA, VGS = 4.0 V
VDS = 3 V, VGS = 0 V, f = 1 MHz
Ω
6
Forward transfer admittance
Yfs
60
12
mS
pF
Short-circuit forward transfer
capacitance (Common-source)
Ciss
Short-circuit output capacitance
(Common-source)
Coss
Crss
7
3
pF
pF
Reverse transfer capacitance
(Common-source)
Turn-on time
Turn-off time
ton
VDD = 3 V, VGS = 0 V to 3 V, RL = 470 Ω
VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Ω
200
200
ns
ns
toff
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Publication date: December 2003
SJJ00263BED
1
XP04878
PT Ta
ID VDS
ID VGS
160
120
80
70
60
50
40
30
20
10
0
250
200
Ta = 25°C
VDS = 3 V
Ta = −25°C
VGS = 2.0 V
25°C
75°C
1.9 V
150
100
50
1.8 V
1.7 V
40
1.6 V
1.5 V
0
0
0
0
2
4
6
8
10
12
0
1.0
2.0
3.0
40
80
120
160
(
)
V
Drain-source voltage VDS
Ambient temperature Ta (°C)
( )
V
Gate-source voltage VGS
Yfs VGS
RDS(on) VGS
VIN IO
10
60
50
VO = 5 V
Ta = 25°C
ID = 10 mA
VDS = 3 V
f = 1 MHz
Ta = 25°C
0.16
0.12
0.08
40
30
20
1
0.04
0
Ta = 75°C
10
0
25°C
−25°C
10 −1
1
10
Output current IO mA
102
0
1.0
2.0
3.0
0
2
4
6
(
)
Gate-source voltage VGS (V)
(
)
V
Gate-source voltage VGS
SJJ00263BED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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