ZTX360 [ETC]
NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR; NPN硅平面高速开关晶体管
| 型号： | ZTX360 |
| 厂家： | 
ETC |
| 描述： | NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR |
| 文件： | 总1页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON PLANAR
ZTX360
HIGH SPEED SWITCHING TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
*
*
*
40 Volt VCEO
1 Amp continuous current
Fast switching
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
60
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
5
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
1
A
Ptot
500
W
°C
Tj:Tstg
-55 to +175
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
VCEO(SUS) 40
TYP.
MAX. UNIT CONDITIONS.
Collector-Emitter
Sustaining Voltage
V
IC=10mA, IB=0*
Collector Cut-Off
Current
ICBO
500
300
nA
µA
V
CB=40V, IE=0
VCB=40V, IE=0, Tamb=150°C
Collector-Emitter
Saturation Voltage
VCE(sat)
0.6
1.2
150
V
IC=500mA, IB=50mA*
IC=500mA, IB=50mA*
IC=500mA, VCE=1V*
Base-Emitter
Saturation Voltage
VBE(sat)
0.7
25
V
Static Forward Current hFE
Transfer Ratio
Transition Frequency
fT
200
MHz
IC=50mA, VCE=10V,
f=100MHz
Input Capacitance
Output Capacitance
Turn-On Time
Cib
Cob
ton
36
50
10
40
pF
pF
ns
VEB=0.5V, IC=0, f=1MHz
VCB=10V, IE=0, f=1MHz
5.75
VCC=30V, IC=500mA,
IB(on)=50mA, -VBE(off=) 2V
Turn-Off Time
toff
75
ns
VCC=30V, IC=500mA,
IB(on)=-IB(off)=50mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-166
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