ZTX653LCC4 [ETC]
NPN ; NPN\n
ETC 
ZTX653LCC4
NPN TRANSISTOR IN A
HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
MECHANICAL DATA
Dimensions in mm (inches)
9.14 (0.360)
8.64 (0.340)
1.27 (0.050)
1.07 (0.040)
FEATURES
≈ 2.16 (0.085)
12 13 14 15 16
1.39 (0.055)
1.02 (0.040)
• SILICON PLANAR NPN TRANSISTOR
• HERMETIC SURFACE MOUNT PACKAGE
• CECC SCREENING OPTIONS
11
10
9
17
18
1
7.62 (0.300)
7.12 (0.280)
0.76 (0.030)
0.51 (0.020)
8
2
0.33 (0.013)
0.08 (0.003)
Rad.
7
6
5
4
3
• SPACE QUALITY LEVEL OPTIONS
0.43 (0.017)
0.18 (0.007
Rad.
1.39 (0.055)
1.15 (0.045)
1.65 (0.065)
1.40 (0.055)
LCC4 PACKAGE
Underside View
BASE
4,5
COLLECTOR
EMITTER
1,2,15,16,17,18
6,7,8,9,10,11,12,13
ABSOLUTE MAXIMUM RATINGS PER SIDE (T = 25°C unless otherwise stated)
C
V
V
V
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
120V
100V
CBO
CEO
EBO
5V
I
Continuous Collector Current
2A
C
P
Power Dissipation @ T = 25°C
amb
2W
TOT
Derate above 25°C
16mW/°C
–55 to 150°C
62.5°C/W
T T
Operating And Storage Temperature Range
Junction - Ambient Thermal Resistance
j STG
R
J-A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 5/00
Issue 2
ZTX653LCC4
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Collector – Base Breakdown Voltage I = 100 A
Test Conditions
Min.
120
100
5
Typ.
Max. Unit
V
V
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
C
Collector – Emitter Breakdown Voltage I = 10mA
C
Emitter – Base Breakdown Voltage
I = 100 A
E
V
V
= 100V
= 4V
0.1
A
CB
I
I
Collector – Cut-off Current
CBO
EBO
T = 100°C
10
C
Emitter Cut-off Current
0.1
0.3
A
EB
I = 1A
I = 100mA*
0.13
0.23
0.9
C
B
V
Collector – Emitter Saturation Voltage
V
CE(sat)
I = 2A
I = 200mA*
0.5
C
B
V
V
Base – Emitter Saturation Voltage
Base – Emitter Turn-On Voltage
I = 1A
I = 100mA*
1.25
1.0
V
V
BE(sat)
BE(on)
C
B
I = 1A
V
V
V
V
V
= 2V*
= 2V*
= 2V*
= 2V*
= 2V*
0.8
C
CE
CE
CE
CE
CE
I = 50mA
70
100
55
200
200
110
55
C
I = 500mA
300
C
H
DC Current Gain
—
FE
I = 1A
C
I = 2A
25
C
* Pulse test t = 300ms ,
2%
p
DYNAMIC CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Parameter
Test Conditions
Min.
Typ.
Max. Unit
f
Transition Frequency
Output Capacitance
Switching Times
Switching Times
I = 100mA
V = 5V
CE
f = 100MHz
140
175
MHz
T
C
C
V
= 10V
f = 1.0MHz
30
pF
obo
CB
T
T
I = 500mA V = 10V
80
on
C
CC
ns
I
=I =50mA
B1 B2
1200
off
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 5/00
Issue 2
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