ZVP2110C [ETC]
Obsolete - alternative part: ZVP2110A ; 过时 - 替代部分： ZVP2110A\n
| 型号： | ZVP2110C |
| 厂家： | 
ETC |
| 描述： | Obsolete - alternative part: ZVP2110A
|
| 文件： | 总1页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
ZVP2110C
FEATURES
*
*
100 Volt VDS
RDS(on)=8Ω
G
D
S
REFER TO ZVP2110A FOR GRAPHS
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VDS
VALUE
UNIT
V
Drain-Source Voltage
-100
-230
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
ID
mA
A
IDM
-3
Gate Source Voltage
VGS
V
± 20
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
700
mW
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
SYMBOL MIN. MAX. UNIT CONDITIONS.
PARAMETER
Drain-Source Breakdown
Voltage
BVDSS
-100
V
ID=-1mA, VGS=0V
ID=-1mA, VDS= VGS
VGS=± 20V, VDS=0V
Gate-Source Threshold
Voltage
VGS(th)
-1.5
-3.5
20
V
Gate-Body Leakage
IGSS
IDSS
nA
Zero Gate Voltage Drain
Current
-1
-100
VDS=-100 V, VGS=0
VDS=-80 V, VGS=0V, T=125°C(2)
µA
µA
On-State Drain Current(1)
ID(on)
-750
125
mA
VDS=-25 V, VGS=-10V
Static Drain-Source On-State RDS(on)
Resistance (1)
8
VGS=-10V,ID=-375mA
Ω
Forward Transconductance
(1)(2)
gfs
mS
VDS=-25V,ID=-375mA
Input Capacitance (2)
Ciss
100
35
pF
pF
Common Source Output
Capacitance (2)
Coss
VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss
10
pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
td(on)
tr
td(off)
tf
7
ns
ns
ns
ns
15
12
15
VDD≈-25V, ID=-375mA
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
3-424
相关型号：
ZVP2110CSM
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZVP2110CSMTC
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZVP2110CSMTC
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES
ZVP2110CSTOA
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZVP2110CSTOA
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES
ZVP2110CSTOB
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZVP2110CSTOF
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, E-LINE PACKAGE-3
DIODES
ZVP2110CSTZ
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
ZVP2110DWP
Small Signal Field-Effect Transistor, 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.042 X 0.042 INCH, G17, DIE-2
DIODES
©2020 ICPDF网 联系我们和版权申明