概述
数据手册BC856BDW1T1 概述
Dual General Purpose Transistors 双路通用晶体管
BC856BDW1T1 数据手册
通过下载BC856BDW1T1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Dual General Purpose Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
6
Q2
1
5
4
6
5
4
See Table
Q1
1
2
3
3
2
SOT–363/SC–88
CASE 419B STYLE 1
MAXIMUM RATINGS
Rating
Symbol BC856
BC857 BC858
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V CEO
V CBO
V EBO
I C
–65
–80
–45
–50
–30
–30
V
–5.0
–100
–5.0
–100
–5.0
–100
V
Collector Current
-Continuous
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
Per Device
P D
380
250
mW
mW
FR– 5 Board, (1) TA = 25°C
Derate above 25°C
3.0
328
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
R θJA
T J , T stg
–55 to +150
ORDERING INFORMATION
Device
Package
Shipping
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
BC856b–1/5
BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
Symbol
Min
Typ
Max
Unit
V (BR)CEO
V
(I C = –10 mA)
BC856 Series
–65
–45
–30
—
—
—
—
—
—
BC857 Series
BC858 Series
Collector–Emitter Breakdown Voltage
(I C = –10 µA, V EB = 0) BC856 Series
V (BR)CES
V (BR)CBO
V (BR)EBO
I CBO
V
V
V
–80
–50
–30
—
—
—
—
—
—
BC857 Series
BC858 Series
Collector–Base Breakdown Voltage
(I C = –10 µA) BC856 Series
–80
–50
–30
—
—
—
—
—
—
BC857 Series
BC858 Series
Emitter–Base Breakdown Voltage
(I E = –1.0 µA)
BC856 Series
–5.0
–5.0
–5.0
—
—
—
—
—
—
—
—
BC857 Series
BC858 Series
—
Collector Cutoff Current
(V CB = –30 V)
–15
–4.0
nA
(V CB = –30 V, T A = 150°C)
—
µA
ON CHARACTERISTICS
DC Current Gain
h FE
—
(I C = –10 µA, V CE = –5.0 V) BC856B, BC857B, BC858B
—
—
150
270
—
—
BC857C, BC858C
(I C = –2.0 mA, V CE =– 5.0 V) BC856B, BC857B, BC858B
BC857C, BC858C
220
420
—
290
520
—
475
800
Collector–Emitter Saturation Voltage (I C = -10 mA, I B = -0.5 mA) V CE(sat)
Collector–Emitter Saturation Voltage ( I C = -100 mA, I B = -5.0 mA)
Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) V BE(sat)
Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA)
–0.3
–0.65
—
V
V
V
—
—
—
–0.7
–0.9
––
—
—
Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V)
Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V)
V BE(on)
–0.6
—
–0.75
–0.82
—
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f T
100
—
—
—
—
—
4.5
10
MHz
(I C = –10 mA, V CE = –5.0 Vdc, f = 100 MHz)
Output Capacitance (V CB = –10 V, f = 1.0 MHz)
Noise Figure (I C = –0.2 mA,
C obo
NF
pF
dB
V CE = –5.0 V dc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
—
BC856b–2/5
BC856BDW1T1, BC857BDW1T1, BC857CDW1T1
BC858BDW1T1, BC858CDW1T1
TYPICAL PNP CHARACTERISTICS — BC856
-1.0
-0.8
-0.6
-0.4
-0.2
0
2.0
1.0
0.5
0.2
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
-50 -100 -200
-0.2
-0.5
-1.0
-2.0
-5.0 -10
-20
-50
-100 -200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (AMP)
Figure 2. “On” Voltage
Figure 1. DC Current Gain
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-2.0
-1.6
-1.2
-0.8
-0.4
0
-0.2
-0.5
-1.0
-2.0
-5.0 -10
-20
-50
-100 -200
-0.02 -0.05 -0.1
-0.2
-0.5 -1.0
-2.0
-5.0
-10
-20
I C , COLLECTOR CURRENT (mA)
I B , BASE CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
Figure 3. Collector Saturation Region
40
20
500
200
10
0.8
6.0
100
50
4.0
20
2.0
-1.0
-10
-100
-0.1 -0.2
-0.5
-1.0 -2.0
-5.0
-10
-20
-50 -100
I C , COLLECTOR CURRENT (mA)
V R , REVERSE VOLTAGE (VOLTS)
Figure 6. Current–Gain – Bandwidth Product
Figure 5. Capacitance
BC856b–3/5
BC856BDW1T1, BC857BDW1T1, BC857CDW1T1
BC858BDW1T1, BC858CDW1T1
TYPICAL PNP CHARACTERISTICS — BC857/BC858
2.0
1.5
-1.0
-0.8
-0.6
-0.4
-0.2
0
1.0
0.7
0.5
0.3
0.2
-0.2
-0.5
-1.0 -2.0
-5.0 -10
-20
-50
-100 -200
-1.0 -0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mAdc)
Figure 8. “Saturation” and “On” Voltages
Figure 7. Normalized DC Current Gain
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
-2.0
-1.6
-1.2
-0.8
-0.4
0
-0.2
-0.5 -1.0
-10
-100
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
I C , COLLECTOR CURRENT (mA)
I B , BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
Figure 9. Collector Saturation Region
400
10
300
7.0
5.0
200
150
100
80
3.0
2.0
60
40
30
1.0
20
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-50
I C , COLLECTOR CURRENT (mA)
V R , REVERSE VOLTAGE (VOLTS)
Figure 12. Current-Gain-Bandwidth Product
Figure 11. Capacitance
BC856b–4/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
1.0
D=0.5
0.2
0.1
0.1
0.05
0.02
Z
θJA (t) = r(t) R θJA
P (pk)
R
θJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
0.01
t 1
0.01
t 2
DUTY CYCLE, D = t 1 /t 2
T J(pk) – T C = P (pk)
R θJC (t)
SINGLE PULSE
0.001
0
1.0
10
100
1.0K
10K
100K
1.0M
t, TIME (ms)
Figure 13. Thermal Response
-200
The safe operating area curves indicate I C –V CE limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
-100
-50
The data of Figure 14 is based upon T J(pk) = 150°C; T C or
T A is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T J(pk)
< 150°C. T J
-10
(pk) may be calculated from the data in Figure 13. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.
-5.0
-2.0
-1.0
-5.0
-10
-30
-45 -65
-100
V CE , COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
BC856b–5/5
BC856BDW1T1 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BC856BDW1T1/D | ETC | Dual General Purpose Transistors | 获取价格 |
|
| BC856BDW1T1D | ONSEMI | Dual General Purpose Transistors | 获取价格 |
|
| BC856BDW1T1G | ONSEMI | Dual General Purpose Transistors | 获取价格 |
|
| BC856BDW1T3 | ONSEMI | 双 PNP 双极晶体管 | 获取价格 |
|
| BC856BDW1T3G | ONSEMI | Dual General Purpose Transistors | 获取价格 |
|
| BC856BE6327 | INFINEON | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon | 获取价格 |
|
| BC856BE6433 | INFINEON | Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon | 获取价格 |
|
| BC856BF | NXP | PNP general purpose transistors | 获取价格 |
|
| BC856BHE3 | MCC | Tape: 3K/Reel , 120K/Ctn; | 获取价格 |
|
| BC856BL | ETC | TRANSISTOR | BJT | PNP | 65V V(BR)CEO | 100MA I(C) | SOT-23 | 获取价格 |
|
BC856BDW1T1 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
