MBD770DWT1 [ETL]
Dual SCHOTTKY Barrier Diodes; 双肖特基势垒二极管
| 型号： | MBD770DWT1 |
| 厂家： | 
E-TECH ELECTRONICS LTD |
| 描述： | Dual SCHOTTKY Barrier Diodes |
| 文件： | 总5页 (文件大小：546K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Dual SCHOTTKY Barrier Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT–363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small six–
leaded package. The SOT–363 is ideal for low–power surface mount
applications where board space is at a premium, such as portable
products.
MBD110DWT1
MBD330DWT1
MBD770DWT1
6
5
4
Surface Mount Comparisons:
SOT–363
SOT–23
7.6
2
1
2
3
Area (mm )
4.6
120
2
Max Package P D (mW)
Device Count
225
1
SOT–363
CASE 419B–01, STYLE 6
Space Savings:
Package
1 × SOT–23
40%
2 × SOT–23
70%
Cathode
6
N/C
5
Anode
4
SOT–363
The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular
MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed
for high–efficiency UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
1
2
3
• Extremely Low Minority Carrier Lifetime
Anode
N/C Cathode
• Very Low Capacitance
• Low Reverse Leakage
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MBD110DWT1
MBD330DWT1
MBD770DWT1
V R
7.0
30
Vdc
70
Forward Power Dissipation
T A = 25°C
P F
120
mW
Junction Temperature
Storage Temperature Range
T J
–55 to +125
–55 to +150
°C
°C
T stg
DEVICE MARKING
MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5
Thermal Clad is a trademark of the Bergquist Company.
MBD110–1/5
MBD110DWT1 MBD330DWT1 MBD770DWT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I R = 10 µA)
Symbol
Min
Typ
Max
Unit
V (BR)R
Volts
MBD110DWT1
MBD330DWT1
MBD770DWT1
7.0
30
70
10
—
—
—
—
—
Diode Capacitance
(V R = 0, f = 1.0 MHz, Note 1)
Total Capacitance
(V R = 15 Volts, f = 1.0 MHz)
(V R = 20 Volts, f = 1.0 MHz)
Reverse Leakage
(V R = 3.0 V)
C T
C T
pF
pF
MBD110DWT1
—
0.88
1.0
MBD330DWT1
MBD770DWT1
—
—
0.9
0.5
1.5
1.0
I R
MBD110DWT1
MBD330DWT1
MBD770DWT1
—
—
—
0.02
13
0.25
200
200
µA
nAdc
nAdc
dB
(V R = 25 V)
(V R = 35 V)
9.0
Noise Figure
NF
V F
(f = 1.0 GHz, Note 2)
Forward Voltage
(I F = 10 mA)
MBD110DWT1
—
6.0
—
Vdc
MBD110DWT1
MBD330DWT1
—
—
—
—
—
0.5
0.38
0.52
0.42
0.7
0.6
0.45
0.6
(I F = 1.0 mAdc)
(I F = 10 mA)
(I F = 1.0 mAdc)
MBD770DWT1
0.5
(I F = 10 mA)
1.0
MBD110–2/5
MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS — MBD110DWT1
1.0
0.7
100
0.5
0.2
10
0.1
0.07
0.05
1.0
0.02
0.01
0.1
30
40
50
60
70
80
90
100
110
120 130
0.3
0.4
0.5
0.6
0.7
0.8
T A , AMBIENT TEMPERATURE (°C)
V F , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 1. Reverse Leakage
11
10
9
1.0
0.9
0.8
0.7
0.6
8
7
6
5
4
3
2
1
0.1
0.2
0.5
1.0
2.0
5.0
10
0
1.0
2.0
3.0
4.0
P LO , LOCAL OSCILLATOR POWER (mW)
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
Figure 3. Capacitance
NOTES ON TESTING AND SPECIFICATIONS
Note 1 – C C and C T are measured using a capaci-
tance bridge (Boonton Electronics Model 75A
or equivalent).
Note 2 – Noise figure measured with diode under
test in tuned diode mount using UHF noise
source and local oscillator (LO) frequency of
1.0 GHz. The LO power is adjusted for 1.0
mW. I F amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 – L S is measured on a package having a
short instead of a die, using an impedance
bridge (Boonton Radio Model 250A RX Meter).
Figure 5. Noise Figure Test Circuit
MBD110–3/5
MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS MBD330DWT1
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
500
400
300
200
100
0
0
3.0
6.0
9.0
12
15
18
21
24
27
30
0
10
20
30
40
50
60
70
80
90
100
V R , REVERSE VOLTAGE (VOLTS)
I F , FORWARD CURRENT (mA)
Figure 6. Total Capacitance
Figure 7. Minority Carrier Lifetime
100
10
1.0
10
0.1
1.0
0.01
0.001
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0
6.0
12
18
24
30
V F , FORWARD VOLTAGE (VOLTS)
V R , REVERSE VOLTAGE (VOLTS)
Figure 9. Forward Voltage
Figure 8. Reverse Leakage
MBD110–4/5
MBD110DWT1 MBD330DWT1 MBD770DWT1
TYPICAL CHARACTERISTICS MBD770DWT1
2.0
1.6
1.2
0.8
0.4
0
500
400
300
200
100
0
0
5.0
10
15
20
25
30
35
40
45
50
0
10
20
30
40
50
60
70
80
90
100
V R , REVERSE VOLTAGE (VOLTS)
I F , FORWARD CURRENT (mA)
Figure 10 . Total Capacitance
Figure 11. Minority Carrier Lifetime
100
10
1.0
10
0.1
1.0
0.01
0.1
0.001
0.2
0.4
0.8
1.2
1.6
2.0
0
10
20
30
40
50
V F , FORWARD VOLTAGE (VOLTS)
V R , REVERSE VOLTAGE (VOLTS)
Figure 13. Forward Voltage
Figure 12. Reverse Leakage
MBD110–5/5
相关型号：
MBD770DWT3
Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, CASE 419B-01, 6 PIN
MOTOROLA
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