MC74VHC1GT00 [ETL]

2-Input NAND Gate / CMOS Logic Level Shifter with LSTTL-Compatible Inputs; 2输入与非门/ CMOS逻辑电平转换器与LSTTL兼容输入
MC74VHC1GT00
型号: MC74VHC1GT00
厂家: E-TECH ELECTRONICS LTD    E-TECH ELECTRONICS LTD
描述:

2-Input NAND Gate / CMOS Logic Level Shifter with LSTTL-Compatible Inputs
2输入与非门/ CMOS逻辑电平转换器与LSTTL兼容输入

转换器 电平转换器 栅
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2–Input NAND Gate / CMOS Logic Level Shifter  
with LSTTL–Compatible Inputs  
MC74VHC1GT00  
The MC74VHC1GT00 is a single gate 2–input NAND fabricated with silicon gate CMOS technology. It achieves high speed operation  
similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.  
The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.  
The device input is compatible with TTL–type input thresholds and the output has a full 5 V CMOS level output swing. The input  
protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic–level translator from  
3.0 V CMOS logic to 5.0 V CMOS Logic or from 1.8 V CMOS logic to 3.0 V CMOS Logic while operating at the high–voltage power  
supply.  
The MC74VHC1GT00 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This  
allows the MC74VHC1GT00 to be used to interface 5 V circuits to 3 V circuits. The output structures also provide protection when  
V CC = 0 V. These input and output structures help prevent device destruction caused by supply voltage – input/output voltage mismatch,  
battery backup, hot insertion, etc.  
Power Down Protection Provided on Inputs and Outputs  
High Speed: t PD = 3.1 ns (Typ) at V CC = 5 V  
Balanced Propagation Delays  
Low Power Dissipation: I CC = 2mA (Max) at T A = 2C  
Pin and Function Compatible with Other Standard Logic  
TTL–Compatible Inputs: V IL = 0.8 V; V IH = 2.0 V  
Families  
CMOS–Compatible Outputs: V OH > 0.8 V CC ; V OL < 0.1  
Chip Complexity: FETs = 64; Equivalent Gates = 14  
V CC @Load  
MARKING DIAGRAMS  
5
4
1
2
VHd  
3
SC–70/SC–88A/SOT–353  
DF SUFFIX  
CASE 419A  
Pin 1  
Y
d = Date Code  
5
Figure 1. Pinout (Top View)  
4
VHd  
1
2
3
Figure 2. Logic Symbol  
SOT–23/TSOP–5/SC–59  
DT SUFFIX  
Pin 1  
CASE 483  
d = Date Code  
FUNCTION TABLE  
Inputs  
Output  
PIN ASSIGNMENT  
A
L
B
L
Y
H
H
H
L
1
2
3
4
5
IN B  
IN A  
L
H
L
GND  
OUT Y  
V CC  
H
H
H
ORDERING INFORMATION  
See detailed ordering and shipping information in the  
package dimensions section on page 4 of this data sheet.  
VHT0–1/4  
MC74VHC1GT00  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
– 0.5 to + 7.0  
– 0.5 to +7.0  
– 0.5 to +7.0  
–0.5 to V cc + 0.5  
–20  
Unit  
V
V CC  
V IN  
DC Supply Voltage  
DC Input Voltage  
V
V OUT  
DC Output Voltage  
V CC=0  
V
High or Low State  
I IK  
Input Diode Current  
Output Diode Current  
mA  
mA  
mA  
mA  
mW  
°C/W  
°C  
I OK  
I OUT  
I CC  
P D  
θ JA  
T L  
V OUT < GND; V OUT > V CC  
+20  
DC Output Current, per Pin  
DC Supply Current, V CC and GND  
Power dissipation in still air  
Thermal resistance  
+ 25  
+50  
SC–88A, TSOP–5  
SC–88A, TSOP–5  
200  
333  
Lead Temperature, 1 mm from Case for 10 s  
Junction Temperature Under Bias  
Storage temperature  
260  
T J  
+ 150  
°C  
T stg  
V ESD  
–65 to +150  
>2000  
°C  
ESD Withstand Voltage  
Human Body Model (Note 2)  
Machine Model (Note 3)  
V
> 200  
Charged Device Model (Note 4)  
N/A  
I LATCH–UP  
Latch–Up Performance Above V CC and Below GND at 125°C (Note 5)  
± 500  
mA  
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions  
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is  
not implied. Functional operation should be restricted to the Recommended Operating Conditions.  
2. Tested to EIA/JESD22–A114–A  
3. Tested to EIA/JESD22–A115–A  
4. Tested to JESD22–C101–A  
5. Tested to EIA/JESD78  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
V CC  
Parameter  
Min  
3.0  
0.0  
0.0  
0.0  
– 55  
0
Max  
5.5  
Unit  
V
DC Supply Voltage  
DC Input Voltage  
DC Output Voltage  
V IN  
5.5  
V
V OUT  
V CC=0  
5.5  
V
High or Low State  
V CC  
+ 125  
100  
20  
T A  
Operating Temperature Range  
Input Rise and Fall Time  
°C  
t r ,t f  
V CC = 3.3 ± 0.3 V  
V CC = 5.0 ± 0.5 V  
ns/V  
0
DEVICE JUNCTION TEMPERATURE VERSUS  
TIME TO 0.1% BOND FAILURES  
Junction  
Time,  
Hours  
Time,  
Years  
117.8  
47.9  
20.4  
9.4  
Temperature °C  
80  
1,032,200  
419,300  
178,700  
79,600  
37,000  
17,800  
8,900  
90  
100  
110  
120  
130  
140  
1
4.2  
2.0  
1
10  
100  
1000  
1.0  
TIME, YEARS  
Figure 3. Failure Rate vs. Time Junction Temperature  
VHT0–2/4  
MC74VHC1GT00  
DC ELECTRICAL CHARACTERISTICS  
V CC  
T A = 25°C  
T A  
<
85°C –55°C to 125°C  
Symbol  
Parameter  
Test Conditions  
(V) Min Typ Max Min Max Min Max Unit  
V IH  
Minimum High–Level  
Input Voltage  
V
3.0 1.4  
4.5 2.0  
5.5 2.0  
1.4  
2.0  
2.0  
1.4  
2.0  
2.0  
V IL  
Maximum Low–Level  
Input Voltage  
V
V
3.0  
4.5  
5.5  
0.53  
0.8  
0.53  
0.8  
0.53  
0.8  
0.8  
0.8  
0.8  
V OH  
Minimum High–Level  
Output Voltage  
V IN = V IH or V IL  
I OH = – 50 µA  
3.0 2.9 3.0  
4.5 4.4 4.0  
2.9  
4.4  
2.9  
4.4  
V
IN = V IH or V IL  
V IN = V IH or V IL  
I OH = –4 mA  
I OH = –8 mA  
V IN = V IH or V IL  
I OL = 50 µA  
3.0 2.58  
4.5 3.94  
2.48  
3.80  
2.34  
3.66  
V OL  
Maximum Low–Level  
Output Voltage  
V
3.0  
4.5  
0.0  
0.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
IN = V IH or V IL  
V IN = V IH or V IL  
I OL = 4 mA  
3.0  
4.5  
0.36  
0.36  
±0.1  
0.44  
0.44  
±1.0  
0.52  
0.52  
±1.0  
I OL = 8 mA  
I IN  
Maximum Input  
Leakage Current  
Maximum Quiescent  
Supply Current  
Quiescent Supply  
Current  
V IN = 5.5 V or GND  
0 to5.5  
µA  
µA  
I CC  
I CCT  
I OPD  
V IN = V CC or GND  
Input: V IN = 3.4 V  
V OUT = 5.5 V  
5.5  
5.5  
0.0  
2.0  
1.35  
0.5  
20  
1.50  
5.0  
40  
1.65 mA  
10 µA  
Output Leakage  
Current  
AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns  
T A = 25°C  
Min Typ Max Min Max Min Max Unit  
T A  
<85°C –55°C<TA<125°C  
Symbol Parameter  
Test Conditions  
t PLH  
t PHL  
,
Maximum  
V CC = 3.3± 0.3 V C L = 15 pF  
C L = 50 pF  
4.1  
5.5  
10.0  
13.5  
11.0  
15.0  
13.0 ns  
17.5  
Propagation Delay,  
Input A or B to Y  
V CC = 5.0± 0.5 V C L = 15 pF  
C L = 50 pF  
3.1  
3.6  
5.5  
6.9  
7.9  
10  
8.0  
9.0  
10  
9.5  
10.5  
C IN  
Maximum Input  
Capacitance  
10  
pF  
Typical @ 2C, V CC = 5.0 V  
C PD  
Power Dissipation Capacitance (Note 6)  
11  
pF  
6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without  
load. Average operating current can be obtained by the equation: I CC(OPR) = C PD V CC f in + I CC C PD is used to determine the no–  
.
2
load dynamic power consumption; P D = C PD V CC f in + I CC V CC  
.
VHT0–3/4  
MC74VHC1GT00  
Y
*Includes all probe and jig capacitance.  
A 1–MHz square input wave is recommended  
for propagation delay tests.  
Figure 4. Switching Waveforms  
Figure 5. Test Circuit  
DEVICE ORDERING INFORMATION  
Device Nomenclature  
Device  
Package Type  
(Name/SOT#/  
Common Name)  
Tape and  
Reel Size  
Device Order  
Number  
Logic  
Temp  
Package Tape and  
Circuit  
Range  
Technology  
Function Suffix  
Reel Suffix  
Indicator Identifier  
MC74VHC1GT00DFT1 MC  
MC74VHC1GY00DFT2 MC  
MC74VHC1GT00DFT4 MC  
MC74VHC1GT00DTT1 MC  
MC74VHC1GT00DTT3 MC  
74  
74  
74  
74  
74  
VHC1G  
VHC1G  
VHC1G  
VHC1G  
VHC1G  
T00  
T00  
T00  
T00  
T00  
DF  
DF  
DF  
DT  
DT  
T1  
SC–70/SC–88A/  
SOT–353  
178 mm (7 in)  
3000 Unit  
T2  
T4  
T1  
T3  
SC–70/SC–88A/  
SOT–353  
178 mm (7 in)  
3000 Unit  
SC–70/SC–88A/  
SOT–353  
330 mm (13 in)  
10,000 Unit  
178 mm (7 in)  
3000 Unit  
SOT–23/TSOPS/  
SC–59  
SOT–23/TSOPS/  
SC–59  
330 mm (13 in)  
10,000 Unit  
VHT0–4/4  

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