MMBT1010 [ETL]
Low Saturation Voltage; 低饱和电压
| 型号： | MMBT1010 |
| 厂家： | 
E-TECH ELECTRONICS LTD |
| 描述： | Low Saturation Voltage |
| 文件： | 总1页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LowSaturationVoltage
MMBT1010LT1
MSD1010T1
PNP Silicon Driver Transistors
Part of the GreenLineTM Portfolio of devices with energy–conserving traits.
This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in
general purpose driver applications. This device is housed in the SOT-23 and
SC–59 packages which are designed for low power surface mount applications.
• Low V CE(sat) , < 0.1 V at 50 mA
PNP GENERAL
PURPOSE DRIVER
TRANSISTORS
SURFACE MOUNT
Applications
• LCD Backlight Driver
• Annunciator Driver
3
• General Output Device Driver
1
2
MAXIMUM RATINGS (T A = 25°C)
CASE 318–08, STYLE 6
SOT– 23
Rating
Symbol
V (BR)CBO
V (BR)CEO
V (BR)EBO
I C
Value
45
Unit
Vdc
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
15
Vdc
3
5.0
Vdc
Collector Current — Continuous
100
mAdc
1
THERMAL CHARACTERISTICS
2
Characteristic
Symbol
Max
Unit
CASE 318D –04, STYLE 1
SC– 59
Power Dissipation
P D (1)
250
mW
mW/°C
°C/W
T
A =25 °C
1.8
Derate above 25°C
COLLECTOR
Thermal Resistance, Junction to Ambient
R θJA
T J
556
150
Junction Temperature
°C
°C
Storage Temperature Range
T stg
–55 —+150
DEVICE MARKING
MMBT1010LT1 = GLP; MSD1010T1 = GLP
BASE
EMITTER
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Condition
Min
15
Max
—
Unit
Vdc
Vdc
µA
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
DC Current Gain
V (BR)CEO
V (BR)EBO
I CBO
I C = 10 mA, I B = 0
I E = 10 µA,I E = 0
5.0
—
—
V CB = 20 V, I E = 0
0.1
100
600
0.1
0.1
0.19
1.1
I CEO
V CE = 10 V, I B = 0
—
µA
h FE1 (2)
V CE(sat)(2)
V CE = 5 V,I C = 100 mA
I C = 10 mA, I B = 1.0 mA
I C = 50 mA, I B = 5.0 mA
I C = 100 mA, I B = 10 mA
I C = 100 mA, I B = 10 mA
300
—
—
Collector-Emitter Saturation Voltage
Vdc
—
Base-Emitter Saturation Voltage
V BE(sat)(2)
—
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Width 300 µs, D.C 2%.
<
<
O3–1/1
相关型号：
MMBT1010LT3
Small Signal Bipolar Transistor, 0.1A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
MOTOROLA
©2020 ICPDF网 联系我们和版权申明