MMDL770T1 [ETL]
Schottky Barrier Diode; 肖特基二极管
| 型号： | MMDL770T1 |
| 厂家： | 
E-TECH ELECTRONICS LTD |
| 描述： | Schottky Barrier Diode |
| 文件： | 总3页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency
UHF and VHF detector applications. Readily available to many other fast
switching RF and digital applications.
MMDL770T1
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance — 1.0 pF @ 20 V
• Low Reverse Leakage — 200 nA (max)
• High Reverse Voltage — 70 Volts (min)
• Available in 8 mm Tape and Reel
1.0 pF SCHOTTKY
BARRIER DIODE
1
• Device Marking: 5H
1
2
2
CATHODE
ANODE
PLASTIC SOD– 323
CASE 477
MAXIMUM RATINGS
Symbol
Rating
Reverse Voltage
Value
Unit
V
70
Vdc
R
THERMAL CHARACTERISTICS
Symbol
Characteristic
Total Device Dissipation FR–5 Board,*
Max
Unit
P D
200
mW
T A = 25°C
Derate above 25°C
1.57
635
mW/°C
°C/W
R θJA
Thermal Resistance Junction to Ambient
Junction and Storage
T J , T stg
–55 to+150
°C
Temperature Range
*FR–5 Minimum Pad
ORDERING INFORMATION
Device
Package
Shipping
3000 / Tape & Reel
MMDL770T1
SOD–323
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I R = 10 µA)
Symbol
Min
Typ
Max
Unit
V (BR)R
70
—
—
Volts
Diode Capacitance
(V R = 20 Volts, f = 1.0 MHz)
Reverse Leakage
(V R = 35 V)
C T
I R
—
—
0.5
9.0
1.0
pF
200
nAdc
Forward Voltage
(I F = 1.0 mAdc)
V
—
0.7
1.0
Vdc
F
(I F = 10 mA)
S4–1/3
MMDL770T1
TYPICAL CHARACTERISTICS
2.0
1.6
1.2
0.8
0.4
0
500
MMBD770T1
MMBD770T1
f = 1.0 MHz
400
KRAKAUER METHOD
300
200
100
0
0
5.0
10
15
20
25
30
35
40
45
50
0
10
20
30
40
50
60
70
80
90
100
V R , REVERSE VOLTAGE (VOLTS)
I F , FORWARD CURRENT (mA)
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
100
10
MMBD770T1
MMBD770T1
A = 100°C
T
1.0
0.1
10
1.0
0.1
T A = 85°C
T A = –40°C
T A = 75°C
0.01
T A = 25°C
T A = 25°C
0.001
0
10
20
30
40
50
0.2
0.4
0.8
1.2
1.6
2.0
V R , REVERSE VOLTAGE (VOLTS)
V F , FORWARD VOLTAGE (VOLTS)
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
S4–2/3
MMDL770T1
PACKAGE DIMENSIONS
SOD–323
PLASTIC PACKAGE
CASE 477–02
ISSUE A
K
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2
1
D
B
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH
SOLDER PLATING.
MILLIMETERS
INCHES
M I N
DIM
M I N
1.60
1.15
0.80
0.25
MAX
1.80
1.35
1.00
0.40
MAX
0.071
0.053
0.039
0.016
E
C
A
B
C
D
E
H
J
0.063
0.045
0.031
0.010
0.15 REF
0.006 REF
0.00
0.089
2.30
0.10
0.177
2.70
0.000
0.0035
0.091
0.004
0.0070
0.106
H
J
K
NOTE 3
STYLE1:
PIN 1. CATHODE
2. ANODE
0.63 mm
0.025’’
1.60 mm
0.063’’
0.83 mm
0.033’’
2.85 mm
0.112’’
mm
inches
(
)
SOD–323
Soldering Footprint
S4–3/3
相关型号：
MMDL914-T1-LF
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2
WTE
©2020 ICPDF网 联系我们和版权申明