FLK017WF [EUDYNA]
X, Ku Band Power GaAs FET; X， Ku波段功率GaAs FET
| 型号： | FLK017WF |
| 厂家： | 
EUDYNA DEVICES INC |
| 描述： | X, Ku Band Power GaAs FET |
| 文件： | 总4页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FLK017WF
X, Ku Band Power GaAs FET
FEATURES
• High Output Power: P
= 20.5dBm(Typ.)
1dB
• High Gain: G
= 7.5dB(Typ.)
1dB
= 26%(Typ.)
• High PAE: η
add
• Proven Reliability
• Hermetic Metal/Ceramic Package
DESCRIPTION
The FLK017WF is a power GaAs FET that is designed for general
purpose applications in the Ku-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Unit
Rating
Drain-Source Voltage
Gate-Source Voltage
V
V
15
-5
V
V
DS
GS
T = 25°C
c
Total Power Dissipation
Storage Temperature
Channel Temperature
P
1.15
-65 to +175
175
W
°C
°C
T
T
stg
T
ch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed 10 volts.
DS
2. The forward and reverse gate currents should not exceed 1.34 and -0.05 mA respectively with
gate resistance of 3000Ω.
3. The operating channel temperature (T ) should not exceed 145°C.
ch
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Limit
Typ.
Item
Symbol
Test Conditions
Unit
Min.
Max.
V
V
V
I
= 5V, V
= 0V
GS
Saturated Drain Current
Transconductance
I
-
-
60
90
-
mA
DS
DS
DS
DSS
g
m
= 5V, I
= 40mA
= 3mA
DS
30
mS
V
DS
Pinch-off Voltage
V
= 5V, I
-1.0
-5
-2.0 -3.5
p
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
V
-
-
-
-
-
V
= -3µA
GSO
GS
P
19.5 20.5
dBm
dB
1dB
V
= 10V,
DS
Power Gain at 1dB G.C.P.
Power-added Efficiency
Noise Figure
G
6.0
-
7.5
26
I
= 0.6 I
1dB
DS
f = 14.5 GHz
DSS (Typ.),
η
add
%
NF
V
= 3V,
DS
= 20mA
-
-
-
2.5
7
-
-
dB
dB
I
DS
f = 12 GHz
(Typ.),
Associated Gain
Gas
R
th
Thermal Resistance
Channel to Case
65
130
°C/W
G.C.P.: Gain Compression Point
CASE STYLE: WF
Edition 1.1
July 1999
1
FLK017WF
X, Ku Band Power GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
2
V
=0V
GS
-0.5V
-1.0V
60
40
1
20
-1.5V
-2.0V
0
2
4
6
8
10
0
50
100
150
200
Case Temperature (°C)
Drain-Source Voltage (V)
OUTPUT POWER vs. INPUT POWER
f = 14.5GHz
I
≈ 0.6 I
DS
DSS
V
DS
V
DS
=10V
=8.5V
22
20
18
16
14
P
out
40
20
η
add
5
7
9
11 13
15
Input Power (dBm)
2
FLK017WF
X, Ku Band Power GaAs FET
S
S
S
+90°
11
22
21
+j50
S
0.2
12
+j100
+j25
12
13
11
14
0.1
10
15
16GHz
+j250
+j10
0
9
16GHz
8GHz
SCALE FOR |S
|
21
8GHz
10
15
14
25
50Ω
100
250
4
3
2
1
180°
0°
9
10
11
8GHz
16GHz
9
10
15
11
12
14
13
13
16GHz
13
-j10
-j250
14
15
12
11
10
8GHz
-j25
9
-j100
-90°
-j50
S-PARAMETERS
V
= 10V, I
= 40mA
DS
S21
DS
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
500
1000
.990
.978
.750
.737
.727
.708
.689
.679
.656
.606
.526
-15.9
-31.4
175.7
157.2
139.7
119.9
98.4
2.892
2.836
1.539
1.436
1.367
1.345
1.307
1.208
1.088
1.003
.976
166.0
152.3
14.1
.006
.011
.038
.041
.047
.055
.064
.069
.071
.076
.088
77.2
65.7
.852
.850
.818
.816
.812
.812
.817
.823
.840
.852
.848
-7.9
-16.3
8000
-35.2
-39.2
-44.7
-53.8
-66.4
-82.5
-96.0
-93.7
9000
-3.8
-106.0
-116.2
-126.5
-140.3
-157.4
-173.1
177.7
170.7
10000
11000
12000
13000
14000
15000
16000
-20.1
-37.4
-57.1
-76.9
-95.4
-112.1
-129.4
80.5
66.3
50.8
-109.7
-126.8
32.0
Download S-Parameters, click here
3
FLK017WF
X, Ku Band Power GaAs FET
Case Style "WF"
Metal-Ceramic Hermetic Package
2.5
(0.098)
Ø1.6±0.01
(0.063)
1
2
3
0.1±0.05
(0.004)
0.6
(0.024)
8.5±0.2
(0.335)
1. Gate
2. Source (Flange)
3. Drain
6.1±0.1
(0.240)
4. Source (Flange)
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
CAUTION
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
FAX: (408) 428-9111
www.fcsi.fujitsu.com
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4
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