FLL107ME [EUDYNA]
L-Band Medium & High Power GaAs FET; L波段中等和高功率GaAs FET
| 型号： | FLL107ME |
| 厂家： | 
EUDYNA DEVICES INC |
| 描述： | L-Band Medium & High Power GaAs FET |
| 文件： | 总4页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FLL107ME
L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P
=29.5dBm (Typ.)
1dB
• High Gain: G
=13.5dB (Typ.)
1dB
=47% (Typ.)
• High PAE: η
add
• Proven Reliability
• Hermetically Sealed Package
DESCRIPTION
The FLL107ME is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally suited
for base station applications. This device is assembled in hermetic
metal/ceramic package.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Unit
Rating
Drain-Source Voltage
Gate-Source Voltage
V
V
15
-5
V
V
DS
GS
T = 25°C
c
Total Power Dissipation
Storage Temperature
Channel Temperature
P
4.16
-65 to +175
175
W
°C
°C
t
T
stg
T
ch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed 10 volts.
DS
2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistance of 400Ω.
3. The operating channel temperature (T ) should not exceed 145°C.
ch
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Limit
Typ.
Item
Symbol
Test Conditions
Unit
Min.
Max.
V
V
V
I
= 5V, V
= 0V
GS
Saturated Drain Current
Transconductance
I
-
300
450
-
mA
DS
DS
DS
DSS
g
= 5V, I
= 200mA
= 15mA
m
-
150
mS
V
DS
Pinch-off Voltage
V
= 5V, I
DS
-1.0
-2.0 -3.5
p
Gate Source Breakdown Voltage
V
-
-
= -15µA
-5
V
GSO
GS
Output Power at 1dB G.C.P.
P
1dB
28.5 29.5
12.5 13.5
-
dBm
V
= 10V
DS
I
≈ 0.6I
DS
DSS (Typ.),
-
Power Gain at 1dB G.C.P.
Power-added Efficiency
G
dB
1dB
f = 2.3GHz
η
-
-
-
47
25
%
add
R
36
Thermal Resistance
Channel to Case
°C/W
th
G.C.P.: Gain Compression Point
CASE STYLE: ME
Edition 1.1
July 1999
1
FLL107ME
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
5
4
3
V
=0V
GS
300
200
-0.5V
-1.0V
2
1
100
-1.5V
-2.0V
0
2
4
6
8
10
0
50
100
150
200
Drain-Source Voltage (V)
Case Temperature (°C)
OUTPUT POWER vs. INPUT POWER
=10V
V
DS
I
≈ 0.6I
DS
DSS
f = 2.3 GHz
30
28
26
24
22
20
50
40
30
20
10
P
out
η
add
8
10 12 14 16 18
Input Power (dBm)
2
FLL107ME
L-Band Medium & High Power GaAs FET
S
S
S
S
+90°
11
22
21
12
+j50
+j100
+j25
0.5 GHz
1
2
5
+j250
2
5
+j10
0
4
5
3
4.5
2
4
4
1
0.5 GHz
3.5
25
50Ω
10
100
250
180°
0°
8
6
4
3
SCALE FOR |S
|
21
2.5
2
.02
.04
.06
0.5 GHz
-j10
1
-j250
5
1.5
1.5
2
4
2.5
3
1
.08
-j25
-j100
0.5 GHz
-90°
-j50
S-PARAMETERS
= 10V, I = 180mA
V
DS
S21
DS
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
.935
.884
.866
.854
.842
.829
.803
.761
.687
.554
-81.9
8.704
5.761
4.260
3.368
2.823
2.526
2.207
2.350
2.233
2.436
135.4
114.2
104.9
98.0
94.2
92.3
87.4
87.7
77.2
70.3
.021
.028
.029
.029
.031
.027
.033
.035
.039
.050
54.0
41.9
40.4
44.2
50.9
59.2
64.1
68.4
67.5
72.2
.404
.408
.443
.494
.545
.585
.622
.651
.688
.699
-43.3
-67.9
-121.5
-143.2
-157.4
-167.6
-176.8
175.1
166.3
155.0
138.8
-84.0
-96.8
-106.5
-114.5
-121.9
-127.3
-132.7
-140.7
Download S-Parameters, click here
3
FLL107ME
L-Band Medium & High Power GaAs FET
Case Style "ME"
Metal-Ceramic Hermetic Package
5.0
(0.197)
2-Ø2.2±0.15
(0.098)
1
3
2
4
0.1±0.05
(0.004)
1.0±0.15
(0.039)
16.0±0.15
1.65±0.2
(0.630)
(0.065)
12.0±0.15
(0.472)
1. Gate
2. Source (Flange)
3. Drain
9.0
(0.354)
4. Source (Flange)
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
CAUTION
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
FAX: (408) 428-9111
www.fcsi.fujitsu.com
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4
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