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元器件品牌
FLL410IK-3C
[EUDYNA]
L-Band High Power GaAs FET; L波段高功率GaAs FET
元器件型号：
FLL410IK-3C
生产厂家：
EUDYNA DEVICES INC
描述和应用：
L-Band High Power GaAs FET
L波段高功率GaAs FET
晶体 晶体管 CD 放大器 局域网
PDF文件：
总6页 (文件大小：246K)
下载文档：
下载PDF数据表文档文件
型号参数：FLL410IK-3C参数
查看货源
FLL410IK-4C
L-Band High Power GaAs FET
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156
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107
FUJITSU
FLL55MK
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Warning
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156
-
0
FUJITSU
FLL57MK
L-Band Medium & High Power GaAs FET
Warning
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156
-
287
EUDYNA
FLL600IQ-2
Push-Pull Configuration, Broad Frequency Range: 800 to 2000 MHz, Suitable for class AB operation
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156
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220
FUJITSU
FLL600IQ-2C
L-Band High Power GaAs FET
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156
-
63
EUDYNA
FLL600IQ-3
L-Band Medium & High Power GaAs FET
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156
-
77
EUDYNA
FLL800IQ-2C
L-Band High Power GaAs FET
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156
-
105
ETC
FLL800IQ-2C
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, CASE IQ, 5 PIN
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156
-
0
FUJITSU
FLL810IQ-3C
L-Band High Power GaAs FET
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156
-
45
EUDYNA
FLL810IQ-4C
L-Band High Power GaAs FET
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156
-
50
EUDYNA
FLLD258
SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR
Warning
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156
-
112
ZETEX
FLLD258
Rectifier Diode, 2 Element, 0.25A, 100V V(RRM), Silicon, SOT-23, 3 PIN
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4
DIODES
FLLD258TA
Rectifier Diode, 2 Element, 0.25A, 100V V(RRM), Silicon
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156
-
0
ZETEX
FLLD258TC
Rectifier Diode, 2 Element, 0.25A, 100V V(RRM), Silicon
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156
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1
DIODES
FLLD261
SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR
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156
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95
ZETEX
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