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BSM100GP60 [EUPEC]

Hochstzulassige Werte / Maximum rated values; Hochstzulassige Werte /最大额定值

BSM100GP60


元器件型号：	BSM100GP60
生产厂家：	EUPEC GMBH
描述和应用：	Hochstzulassige Werte / Maximum rated values Hochstzulassige Werte /最大额定值晶体晶体管功率控制栅局域网
PDF文件：	总12页 (文件大小：212K)
下载文档：	下载PDF数据表文档文件
型号参数：BSM100GP60参数

BSM100GT120DN2

IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate)

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172 INFINEON

BSM101

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

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35 INFINEON

BSM101

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

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26 INFINEON

BSM101AR

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

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41 INFINEON

BSM101AR

Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET,

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0 INFINEON

BSM10GD100D

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 10A I(C)

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84 ETC

BSM10GD100DN1

Insulated Gate Bipolar Transistor, 10A I(C), 1000V V(BR)CES, N-Channel, ECONOPACK-17

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1 INFINEON

BSM10GD120DN2

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 15A I(C)

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207 ETC

BSM10GD120DN2

Power module

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34 INFINEON

BSM10GD120DN2E3224

Power module

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27 INFINEON

BSM10GD120DN2E3224

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 15A I(C)

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86 ETC

BSM10GD60DN2

IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes

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101 INFINEON

BSM10GP120

Technische Information

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127 INFINEON

BSM10GP1202

IGBT Module

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454 ETC

BSM10GP60

IGBT-Module

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213 EUPEC

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