FB15R06KL4B1 [EUPEC]
1GBT-Module;
| 型号： | FB15R06KL4B1 |
| 厂家： | 
EUPEC GMBH |
| 描述： | 1GBT-Module |
| 文件： | 总13页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
preliminary
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Diode Gleichrichter/ diode rectifier
Periodische Rückw. Spitzensperrspannung
Tvj =25°C
VRRM
800
V
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert pro Chip
TC =80°C
IFRMSM
58
50
A
A
RMS forward current per chip
Gleichrichter Ausgang Grenzeffektivstrom
TC =80°C
IRMSmax
IFSM
maximum RMS current at Rectifier output
tP = 10 ms, Tvj = 25°C
tP = 10 ms, Tvj = 150°C
tP = 10 ms, Tvj = 25°C
tP = 10 ms, Tvj = 150°C
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
I2t - value
448
358
1000
642
A
A
I2t
A2s
A2s
Transistor Wechselrichter/ transistor inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj =25°C
VCES
600
V
TC =65°C
TC = 25 °C
IC,nom.
IC
Kollektor-Dauergleichstrom
DC-collector current
15
19
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms,
TC = 25°C
TC =65°C
ICRM
Ptot
30
60
A
W
V
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VGES
+/- 20V
Diode Wechselrichter/ diode inverter
Dauergleichstrom
DC forward current
IF
15
30
25
A
A
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
IFRM
Grenzlastintegral
I2t - value
I2t
A2s
VR = 0V, tp = 10ms, Tvj = 125°C
Transistor Brems-Chopper/ transistor brake-chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj =25°C
VCES
600
V
TC =65 °C
TC = 25 °C
IC,nom.
IC
Kollektor-Dauergleichstrom
DC-collector current
15
19
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms,
TC = 25°C
TC =65°C
ICRM
Ptot
30
60
A
W
V
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VGES
+/- 20V
Diode Brems-Chopper/ diode brake-chopper
Dauergleichstrom
DC forward current
IF
15
30
A
A
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
IFRM
prepared by: Thomas Passe
approved by: R. Keggenhoff
date of publication: 2003-03-26
revision: 2.1
1(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Modul Isolation/ module isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
VISOL
2,5
kV
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
Diode Gleichrichter/ diode rectifier
min. typ. max.
Durchlaßspannung
Tvj = 150°C,
Tvj = 150°C
Tvj = 150°C
Tvj = 150°C,
IF
=
VF
V(TO)
rT
15 A
-
-
-
-
0,8
0,61
11
-
-
-
-
V
V
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
mΩ
mA
Sperrstrom
reverse current
VR
=
IR
800 V
5
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
TC = 25°C
RAA'+CC'
-
11
-
mΩ
min. typ. max.
Transistor Wechselrichter/ transistor inverter
V
GE = 15V, Tvj
=
25°C, IC
=
=
VCE sat
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
15 A
15 A
-
-
1,95
2,2
2,55
-
V
V
VGE = 15V, Tvj = 125°C, IC
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE Tvj = 25°C, IC
,
=
VGE(TO)
Cies
0,4mA
4,5
5,5
0,8
-
6,5
-
V
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
-
-
-
nF
mA
nA
VGE = 0V, Tvj =25°C, VCE
VCE = 0V, VGE =20V, Tvj =25°C
=
ICES
600V
5,0
400
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
IGES
-
I
C = INenn
,
VCC
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
300 V
VGE = ±15V, Tvj = 25°C, RG
VGE = ±15V, Tvj = 125°C, RG
IC = INenn
VGE = ±15V, Tvj = 25°C, RG
VGE = ±15V, Tvj = 125°C, RG
IC = INenn
VGE = ±15V, Tvj = 25°C, RG
VGE = ±15V, Tvj = 125°C, RG
I
VGE = ±15V, Tvj = 25°C, RG
VGE = ±15V, Tvj = 125°C, RG
IC = INenn
VGE = ±15V, Tvj = 125°C, RG
LS
IC = INenn
VGE = ±15V, Tvj = 125°C, RG
LS
td,on
68 Ohm
68 Ohm
300 V
68 Ohm
68 Ohm
300 V
68 Ohm
68 Ohm
300 V
68 Ohm
68 Ohm
300 V
68 Ohm
80 nH
300 V
68 Ohm
80 nH
-
-
37
34
-
-
ns
ns
,
VCC
Anstiegszeit (induktive Last)
rise time (inductive load)
tr
-
-
37
37
-
-
ns
ns
,
VCC
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
td,off
-
-
216
223
-
-
ns
ns
C = INenn
,
VCC
Fallzeit (induktive Last)
fall time (inductive load)
tf
-
-
17
26
-
-
ns
ns
,
VCC
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Eon
Eoff
ISC
-
-
-
0,6
0,4
60
-
-
-
mJ
mJ
A
,
VCC
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
t
P ≤ 10µs,
V
GE ≤ 15V, RG =
68 Ohm
360 V
Tvj≤125°C,
VCC
=
dI/dt =
1000 A/µs
2(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
min. typ. max.
Modulinduktivität
stray inductance module
LσCE
-
-
40
nH
Modul Leitungswiderstand, Anschlüsse-Chip
TC = 25°C
RCC'+EE'
-
10
-
mΩ
lead resistance, terminals-chip
min. typ. max.
Diode Wechselrichter/ diode inverter
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
V
GE = 0V, Tvj
VGE = 0V, Tvj = 125°C,
IF=INenn
VGE = -10V, Tvj
VGE = -10V, Tvj = 125°C, VR
IF=INenn
VGE = -10V, Tvj
VGE = -10V, Tvj = 125°C, VR
IF=INenn
VGE = -10V, Tvj
VGE = -10V, Tvj = 125°C, VR
=
25°C,
IF
IF
=
=
VF
IRM
Qr
15 A
15 A
600 A/us
300 V
300 V
600 A/us
300 V
300 V
600 A/us
300 V
300 V
-
-
1,75
1,8
2,15
-
V
V
,
- diF/dt =
25°C, VR
=
=
=
-
-
13
14
-
-
A
A
,
- diF/dt =
25°C, VR
Sperrverzögerungsladung
recovered charge
=
=
=
-
-
0,8
1,4
-
-
µAs
µAs
,
- diF/dt =
25°C, VR
Abschaltenergie pro Puls
reverse recovery energy
=
=
=
Erec
-
-
0,14
0,24
-
-
mJ
mJ
min. typ. max.
Transistor Brems-Chopper/ transistor brake-chopper
V
GE = 15V, Tvj
=
25°C, IC
=
=
VCE sat
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
15,0 A
15,0 A
-
-
1,95
2,2
2,55
-
V
V
VGE = 15V, Tvj = 125°C, IC
Gate-Schwellenspannung
gate threshold voltage
VCE = VGE Tvj = 25°C, IC
,
=
VGE(TO)
Cies
0,4mA
4,5
5,5
0,8
-
6,5
-
V
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V
Eingangskapazität
input capacitance
Kollektor-Emitter Reststrom
-
-
-
nF
mA
nA
VGE = 0V, Tvj = 25°C, VCE
=
600V
5,0
400
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
IGES
-
min. typ. max.
Diode Brems-Chopper/ diode brake-chopper
Durchlaßspannung
forward voltage
Tvj = 25°C,
Tvj = 125°C,
IF
IF
=
=
VF
15A
15A
-
-
2,15
2,25
2,6
-
V
V
min. typ. max.
NTC-Widerstand/ NTC-thermistor
Nennwiderstand
rated resistance
TC = 25°C
R25
-
5
-
kΩ
%
Abweichung von R
100
TC = 100°C, R100 = 493 Ω
TC = 25°C
-5
5
∆R/R
P25
deviation of R
100
Verlustleistung
power dissipation
20
mW
K
B-Wert
B-value
R2 = R1 exp [B(1/T - 1/T1)]
B25/50
3375
2
3(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Thermische Eigenschaften / thermal properties
min. typ. max.
RthJH
Gleichr. Diode/ rectif. diode
-
-
-
-
-
1,1
2,4
4,0
2,4
4,3
-
-
-
-
-
K/W
K/W
K/W
K/W
K/W
λPaste=1W/m*K
Innerer Wärmewiderstand
thermal resistance, junction to heatsink
Trans. Wechselr./ trans. inverter
Diode Wechselr./ diode inverter
Trans. Bremse/ trans. brake
Diode Bremse/ diode brake
λgrease=1W/m*K
RthJC
Innerer Wärmewiderstand
thermal resistance, junction to case
Gleichr. Diode/ rectif. diode
Trans. Wechselr./ trans. inverter
Diode Wechselr./ diode inverter
Trans. Bremse/ trans. brake
Diode Bremse/ diode brake
Gleichr. Diode/ rectif. diode
Trans. Wechselr./ trans. inverter
Diode Wechselr./ diode inverter
Trans. Bremse/ trans. brake
Diode Bremse/ diode brake
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
2
2,9
2
3,1
-
-
-
-
-
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
RthCH
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
0,2
0,6
1,4
0,6
1,5
λPaste=1W/m*K
λgrease=1W/m*K
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Tvj
Top
Tstg
-
-
-
-
150
125
125
°C
°C
°C
Betriebstemperatur
operation temperature
-40
-40
Lagertemperatur
storage temperature
Mechanische Eigenschaften / mechanical properties
Innere Isolation
Al2O3
225
internal insulation
CTI
comperative tracking index
Anpreßkraft f. mech. Befestigung pro Feder
mounting force per clamp
F
40...80
N
Gewicht
weight
Kontakt - Kühlkörper
terminal to heatsink
creepage distance
G
36
13,5
12
g
Kriechstrecke
mm
mm
mm
mm
Luftstrecke
clearance distance
Terminal - Terminal
Kriechstrecke
7,5
7,5
terminal to terminal
creepage distance
Luftstrecke
clearance distance
4(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Ausgangskennlinienfeld Wechselr. (typisch)
output characteristic inverter (typical)
IC = f (VCE)
VGE = 15 V
30
25
20
15
10
5
Tj = 25°C
Tj = 125°C
0
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
4,00
4,50
5,00
VCE [V]
Ausgangskennlinienfeld Wechselr. (typisch)
output characteristic inverter (typical)
IC = f (VCE)
Tvj = 125°C
30
25
20
15
10
5
VGE = 8V
VGE = 9V
VGE = 10V
Vge=12V
Vge=15V
Vge=20V
0
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
4,00
4,50
5,00
VCE [V]
5(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Übertragungscharakteristik Wechselr. (typisch)
transfer characteristic inverter (typical)
IC = f (VGE)
VCE = 20 V
30
25
20
15
10
5
Tj = 25°C
Tj = 25°C
0
6,00
7,00
8,00
9,00
10,00
11,00
12,00
13,00
VGE [V]
Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) IF = f (VF)
forward characteristic of FWD inverter (typical)
30
25
20
15
10
5
Tj = 25°C
Tj = 125°C
0
0,00
0,50
1,00
1,50
2,00
2,50
3,00
VF [V]
6(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Schaltverluste Wechselr. (typisch) E = f (IC), Eoff = f (IC), Erec = f (IC) VCC
=
300 V
on
68 Ohm
switching losses inverter (typical)
Tj = 125°C,
VGE = ±15 V,
RGon = RGoff =
3
2,5
2
Eon
Eoff
Erec
1,5
1
0,5
0
0
5
10
15
20
25
30
IC [A]
Schaltverluste Wechselr. (typisch)
switching losses inverter (typical)
E = f (RG), Eoff = f (RG), Erec = f (RG)
on
300 V
Tj = 125°C, VGE = +-15 V , Ic = Inenn
,
VCC =
3
Eon
Eoff
Erec
2,5
2
1,5
1
0,5
0
60
80
100
120
140
160
180
200
220
RG [Ω]
7(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Transienter Wärmewiderstand Wechselr.
ZthJH = f (t)
10,000
1,000
0,100
Zth-IGBT
Zth-FWD
i
1
2
3
4
IGBT: r [K/W]: 156,8e-3
616,5e-3
784,7e-3 842e-3
78,72e-3 225,6e-3
i
i [s]:
FWD: ri [K/W]: 261,3e-3
i [s]: 3e-6
3e-6
10,16e-3
1,31
78,7e-3
1,03
10,2e-3
1,4
225,6e-3
0,001
0,01
0,1
1
10
t [s]
Sicherer Arbeitsbereich Wechselr. (RBSOA)
IC = f (VCE)
68 Ohm
reverse bias save operating area inverter (RBSOA)Tvj = 125°C, VGE = ±15V, RG
=
35
30
25
20
15
10
5
IC,Modul
IC,Chip
0
0
100
200
300
400
500
600
700
VCE [V]
8(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch)
output characteristic brake-chopper-IGBT (typical)
IC = f (VCE)
VGE = 15 V
30
Tj = 25°C
Tj = 125°C
25
20
15
10
5
0
0,00
0,50
1,00
1,50
2,00
2,50
3,00
3,50
4,00
VCE [V]
Durchlaßkennlinie der Brems-Chopper-Diode (typisch) IF = f (VF)
30
25
20
15
10
5
Tj = 25°C
Tj = 125°C
0
0
0,5
1
1,5
2
2,5
3
VF [V]
9(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Durchlaßkennlinie der Gleichrichterdiode (typisch)
forward characteristic of rectifier diode (typical)
IF = f (VF)
30
25
20
15
10
5
Tj = 25°C
Tj = 150°C
0
0,00
0,20
0,40
0,60
0,80
1,00
1,20
VF [V]
NTC- Temperaturkennlinie (typisch)
R = f (T)
NTC- temperature characteristic (typical)
100000
10000
1000
Rtyp
100
0
20
40
60
80
100
120
140
TC [°C]
10(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Vorläufig
preliminary
Schaltplan/ circuit diagram
Gehäuseabmessungen/ package outlines
Bohrplan /
drilling layout
11(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules
FB15R06KL4B1
Gehäuseabmessungen Forts. / package outlines contd.
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
12(12)
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