EL816(S1)(TB)-FV [EVERLIGHT]
Transistor Output Optocoupler, 1-Element, 5000V Isolation, ROHS COMPLIANT, SMD, 4 PIN;
| 型号： | EL816(S1)(TB)-FV |
| 厂家： | 
EVERLIGHT ELECTRONICS CO., LTD |
| 描述： | Transistor Output Optocoupler, 1-Element, 5000V Isolation, ROHS COMPLIANT, SMD, 4 PIN 输出元件 光电 |
| 文件： | 总13页 (文件大小：390K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL816 Series
Features:
• Current transfer ratio
(CTR: 50~600% at IF =5mA, VCE =5V)
• High isolation voltage between inputs
and output (Viso=5000 V rms)
• Creepage distance >7.62 mm
• Operating temperature up to +110°C
• Compact small outline package
• Pb free and RoHS compliant.
• UL approved (No. E214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved
• CSA approved (No. 1143607)
Description
The EL816 series of devices each consist of an infrared
emitting diodes, optically coupled to a phototransistor
detector.
They are packaged in a 4-pin DIP package and available
in wide-lead spacing and SMD option.
Schematic
Applications
• Programmable controllers
• System appliances, measuring instruments
• Telecommunication equipments
• Home appliances, such as fan heaters, etc.
• Signal transmission between circuits of different potentials and impedances
Pin Configuration
1. Anode
2. Cathode
3. Emitter
4. Collector
Everlight Electronics Co., Ltd.
Document No：DPC-816-001 Rev. 3
1
http://www.everlight.com
April, 1 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL816 Series
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
IF
Rating
Unit
mA
A
Forward current
50
1
IFP
Peak forward current (1us, pulse)
Input
VR
Reverse voltage
6
V
Power dissipation
PD
PC
70
mW
No derating required up to Ta = 100°C
150
mW
Power dissipation
Derating factor (above Ta = 80°C)
mW/°C
5.8
80
Output
IC
Collector current
mA
V
VCEO
VECO
PTOT
VISO
TOPR
TSTG
TSOL
Collector-Emitter voltage
Emitter-Collector voltage
Total power dissipation
Isolation voltage *1
80
6
V
200
mW
V rms
°C
5000
-55 ~ +110
-55 ~ +125
260
Operating temperature
Storage temperature
°C
Soldering temperature *2
°C
Notes
*1 AC for 1 minute, R.H. = 40 ~ 60% R.H. In this test, pins 1 & 2 are shorted together, and pins 3 & 4
are shorted together.
*2 For 10 seconds.
Everlight Electronics Co., Ltd.
Document No：DPC-816-001 Rev. 3
2
http://www.everlight.com
April, 1 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL816 Series
Electrical Characteristics (Ta=25°C unless specified otherwise)
Input
Parameter
Forward voltage
Symbol
Min.
Typ.*
Max.
Unit
Condition
-
-
-
1.2
-
1.4
10
V
VF
IR
IF = 20mA
Reverse current
µA
pF
VR = 4V
Input capacitance
30
250
V = 0, f = 1kHz
Cin
Output
Parameter
Symbol
ICEO
Min.
-
Typ.*
-
Max.
100
Unit
nA
Condition
Collector-Emitter dark
current
VCE = 20V, IF = 0mA
Collector-Emitter
breakdown voltage
80
6
-
-
-
-
IC = 0.1mA
IE = 0.1mA
BVCEO
BVECO
V
V
Emitter-Collector
breakdown voltage
Transfer Characteristics (Ta=25°C unless specified otherwise)
Parameter
Symbol
Min.
Typ.*
Max.
600
160
260
400
600
200
300
Unit
Condition
EL816
50
-
-
-
-
-
-
-
EL816A
EL816B
EL816C
EL816D
EL816X
EL816Y
80
130
200
400
100
150
Current Transfer
ratio
CTR
%
IF = 5mA ,VCE = 5V
Collector-Emitter
saturation voltage
-
0.1
0.2
IF = 20mA ,IC = 1mA
VCE(sat)
RIO
V
Ω
VIO = 500Vdc,
Isolation resistance
Floating capacitance
5×1010
-
-
-
40~60% R.H.
0.6
1.0
pF
CIO
VIO = 0, f = 1MHz
VCE = 5V, IC = 2mA
Cut-off frequency
fc
-
80
-
kHz
RL = 100Ω, -3dB
VCE = 2V, IC = 2mA,
RL = 100Ω
Rise time
Fall time
-
-
4
3
18
18
tr
tf
µs
µs
* Typical values at Ta = 25°C
Everlight Electronics Co., Ltd.
Document No：DPC-816-001 Rev. 3
3
http://www.everlight.com
April, 1 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL816 Series
Typical Performance Curves
Everlight Electronics Co., Ltd.
Document No：DPC-816-001 Rev. 3
4
http://www.everlight.com
April, 1 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL816 Series
VCC
Input
Pulse
IF
IC
RL
Output
10%
90%
Input
Output
Pulse
RIN
tr
ton
tf
toff
Figure 10. Switching Time Test Circuit & Waveforms
Everlight Electronics Co., Ltd.
Document No：DPC-816-001 Rev. 3
5
http://www.everlight.com
April, 1 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL816 Series
Order Information
Part Number
EL816(X)(Y)(Z)-FV
Note
X
Y
Z
F
V
= Lead form option (S, S1, M or none)
= CTR Rank (A, B, C, D, X, Y or none)
= Tape and reel option (TA, TB, TU, TD or none)
= Lead frame option (F: Iron, None: copper)
= VDE (option)
Option
None
Description
Packing quantity
100 units per tube
100 units per tube
1000 units per reel
1000 units per reel
1000 units per reel
1000 units per reel
1500 units per reel
1500 units per reel
1500 units per reel
1500 units per reel
Standard DIP-4
M
Wide lead bend (0.4 inch spacing)
S (TA)
S (TB)
S1 (TA)
S1 (TB)
S (TU)
S (TD)
S1 (TU)
S1 (TD)
Surface mount lead form + TA tape & reel option
Surface mount lead form + TB tape & reel option
Surface mount lead form (low profile) + TA tape & reel option
Surface mount lead form (low profile) + TB tape & reel option
Surface mount lead form + TU tape & reel option
Surface mount lead form + TD tape & reel option
Surface mount lead form (low profile) + TU tape & reel option
Surface mount lead form (low profile) + TD tape & reel option
Everlight Electronics Co., Ltd.
Document No：DPC-816-001 Rev. 3
6
http://www.everlight.com
April, 1 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL816 Series
Package Drawing
(Dimensions in mm)
Standard DIP Type
Option M Type
Everlight Electronics Co., Ltd.
Document No：DPC-816-001 Rev. 3
7
http://www.everlight.com
April, 1 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL816 Series
Option S Type
Option S1 Type
Everlight Electronics Co., Ltd.
Document No：DPC-816-001 Rev. 3
8
http://www.everlight.com
April, 1 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL816 Series
Recommended pad layout for surface mount leadform
Device Marking
EL
816
F R YWW V
Notes
EL
816
F
R
Y
denotes EVERLIGHT
denotes Device Number
denotes Factory Code (None: China, T: Taiwan)
denotes CTR Rank (A, B, C, D or none)
denotes 1 digit Year code
WW
V
denotes 2 digit Week code
denotes VDE (option)
Everlight Electronics Co., Ltd.
Document No：DPC-816-001 Rev. 3
9
http://www.everlight.com
April, 1 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL816 Series
Tape & Reel Packing Specifications
Option TA
Option TB
Direction of feed from reel
Direction of feed from reel
Tape dimensions
Dimension No.
Dimension(mm)
A
B
Do
D1
E
F
10.4±0.1
4.55±0.1
1.5±0.1
1.5±0.05
1.75±0.1
7.5±0.1
Dimension No.
Dimension(mm)
Po
P1
P2
t
W
K
16.0+0.3/
-0.1
4.0±0.1
12.0±0.1
2.0±0.1
0.33±0.1
4.55±0.1
Everlight Electronics Co., Ltd.
Document No：DPC-816-001 Rev. 3
10
http://www.everlight.com
April, 1 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL816 Series
Option TD
Option TU
Direction of feed from reel
Direction of feed from reel
Tape dimensions
Dimension No.
Dimension(mm)
A
B
C
D
E
F
16.00±0.3
7.5±0.1
1.75±0.1
8.0±0.1
2.0±0.1
4.0±0.1
Dimension No.
Dimension(mm)
G
H
I
J
K
1.5+0.1/-0
10.4±0.1
0.4±0.05
4.55±0.1
5.1±0.1
Everlight Electronics Co., Ltd.
Document No：DPC-816-001 Rev. 3
11
http://www.everlight.com
April, 1 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL816 Series
Solder Reflow Temperature Profile
260 °C (peak, 10 Sec
>255 °C (30s Max)
217°C
1-3 °C/Sec Max
200°C
60 – 140 Sec
150°C
70 – 170 Sec
1-3 °C/Sec Max
TIME (S)
Everlight Electronics Co., Ltd.
Document No：DPC-816-001 Rev. 3
12
http://www.everlight.com
April, 1 2008
4 PIN DIP PHOTOTRANSISTOR
PHOTOCOUPLER
EL816 Series
DISCLAIMER
1. The specifications in this datasheet may be changed without notice. EVERLIGHT reserves the authority
on material change for above specification.
2. When using this product, please observe the absolute maximum ratings and the instructions for use as
outlined in this datasheet. EVERLIGHT assumes no responsibility for any damage resulting from use of
the product which does not comply with the absolute maximum ratings and the instructions included in this
datasheet.
3. These specification sheets include materials protected under copyright of EVERLIGHT. Reproduction in
any form is prohibited without the specific consent of EVERLIGHT.
Everlight Electronics Co., Ltd.
Document No：DPC-816-001 Rev. 3
13
http://www.everlight.com
April, 1 2008
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