EL816A_技术文档

4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL816 Series

Schematic

Features:

• Compliance Halogens Free (Only copper leadframe)

(Br < 900 ppm, Cl < 900 ppm, Br+Cl < 1500 ppm)

• Current transfer ratio

(CTR: 50~600% at I_F= 5mA, V_CE= 5V)

(CTR: 63~320% at I_F= 10mA, V_CE= 5V)

• High isolation voltage between input

and output (Viso=5000Vrms)

Pin Configuration

1. Anode

2. Cathode

3. Emitter

4. Collector

• Creepage distance > 7.62mm

• Operating temperature up to +110°C

• Compact small outline package

• The product itself will remain within RoHS compliant version

• Compliance with EU REACH

• UL and cUL approved(No. E214129)

• VDE approved (No. 132249)

• SEMKO approved

• NEMKO approved

• DEMKO approved

• FIMKO approved

• CQC approved

Description

The EL816 series of devices each consist of an infrared emitting diodes,

optically coupled to a phototransistor detector.

They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Applications

• Programmable controllers

• System appliances, measuring instruments

• Telecommunication equipments

• Home appliances, such as fan heaters, etc.

• Signal transmission between circuits of different potentials and impedances

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Issue No: DPC-0000009 Rev. 15

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL816 series

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Rating

Unit

Forward current

60

1

I_F

mA

A

Peak forward current (1us, pulse)

I_FP

V_R

Reverse voltage

Input

6

V

Power Dissipation

100

P_D

P_C

mW

No derating required up to T_a= 100°C

150

5.8

mW

Power dissipation

Derating factor (above T_a= 80°C)

mW/°C

Output

50

80

I_C

Collector current

mA

V

V_CEO

V_ECO

P_TOT

V_ISO

T_OPR

T_STG

T_SOL

Collector-Emitter voltage

6

Emitter-Collector voltage

Total Power Dissipation

V

200

mW

Vrms

°C

Isolation Voltage*¹

5000

-55 to 110

-55 to 125

260

Operating Temperature

Storage Temperature

°C

Soldering Temperature*²

°C

Notes:

*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.

*2 For 10 seconds

2

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL816 series

Electro-Optical Characteristics (Ta=25°C unless specified otherwise)

Input

Max.

1.4

Unit

Parameter

Symbol

Min.

-

Typ.

1.2

Condition

V_F

I_R

V

I_F= 20mA

V_R= 4V

Forward Voltage

Reverse Current

Input capacitance

µA

pF

-

10

30

250

V = 0, f = 1kHz

C_in

Output

Max.

Unit

nA

V

Parameter

Symbol

I_CEO

Min

-

Typ.

Condition

V_CE= 20V, I_F= 0mA

I_C= 0.1mA

Collector-Emitter dark

current

-

100

Collector-Emitter

breakdown voltage

Emitter-Collector

breakdown voltage

80

6

-

BV_CEO

BV_ECO

V

I_E= 0.1mA

Transfer Characteristics

Max.

600

Unit

Parameter

Symbol

Min

Typ.

-

Condition

EL816

EL816A

EL816B

EL816C

EL816D

EL816X

50

80

160

260

400

600

200

300

125

200

320

-

130

200

300

100

150

63

CTR

I_F= 5mA ,V_CE= 5V

%

Current

EL816Y

-

Transfer ratio

EL816I

EL816J

EL816K

EL816I

EL816J

EL816K

100

160

22

-

I_F= 10mA ,V_CE= 5V

I_F= 1mA ,V_CE= 5V

CTR

%

34

-

56

-

3

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL816 series

Transfer Characteristics (T_a=25°C unless specified otherwise) Continuity

Max.

0.2

Unit

V

Parameter

Symbol

V_CE(sat)

Min

-

Typ.

0.1

Condition

Collector-Emitter

saturation voltage

I_F= 20mA ,I_C= 1mA

V_IO= 500Vdc,

40~60% R.H.

Isolation resistance

Floating capacitance

Cut-off frequency

Rise time

5×10¹⁰

-

0.6

80

4

-

R_IO

C_IO

fc



-

1.0

-

pF

V_IO= 0, f = 1MHz

V_CE= 5V, I_C= 2mA

R_L= 100, -3dB

kHz

µs

18

t_r

t_f

V_CE= 2V, I_C= 2mA,

µs

R_L= 100

Fall time

3

* Typical values at T_a= 25°C

4

Issue No: DPC-0000009 Rev. 15

Ver.:15

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ꢀ

DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL816 series

Typical Electro-Optical Characteristics Curves

5

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL816 series

V_CC

I_F

Input

Pulse

I_C

R_L

Output

Input

10%

90%

Output

Pulse

R_IN

t_r

t_on

t_f

t_off

Figure 10. Switching Time Test Circuit & Waveforms

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL816 series

Order Information

Part Number

EL816X(Y)(Z)-FV

Note

X

Y

Z

F

V

= Lead form option (S1, S2, M or none)

= CTR Rank (A, B, C, D, X, Y, I, J, K or none)

= Tape and reel option (TU, TD or none).

= Lead frame option (F: Iron, None: copper)

= VDE safety (optional).

Option

None

Description

Packing quantity

100 units per tube

1500 units per reel

2000 units per reel

Standard DIP-4

M

Wide lead bend (0.4 inch spacing)

S1 (TU)

S1 (TD)

S2 (TU)

S2 (TD)

Surface mount lead form (low profile) + TU tape & reel option

Surface mount lead form (low profile) + TD tape & reel option

Surface mount lead form (low profile) + TU tape & reel option

Surface mount lead form (low profile) + TD tape & reel option

7

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Ver.:15

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL816 series

Package Dimension (Dimensions in mm)

Standard DIP Type

Option M Type

8

Issue No: DPC-0000009 Rev. 15

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL816 series

Option S1 Type

Option S2 Type

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Issue No: DPC-0000009 Rev. 15

Ver.:15

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL816 series

Recommended pad layout for surface mount leadform

For S1 option

For S2 option

Device Marking

EL

816

RYWWV

Notes

EL

816

R

denotes EVERLIGHT

denotes Device Number

denotes CTR Rank(A, B, C, D, X, Y, I, J, K or none)

denotes 1 digit Year code

Y

WW

V

denotes 2 digit Week code

denotes VDE (optional)

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL816 series

Tape & Reel Packing Specifications

Option TD

Option TU

Direction of feed from reel

Tape dimensions

Dimension No.

Ao

Bo

Do

D1

E

F

Dimension (mm)

4.90±0.1

4.88±0.1

10.40±0.1

12.55±0.1

1.5±0.1

1.50±0.1

1.75±0.1 7.50±0.1

1.75±0.1 11.5±0.1

S1

Dimension (mm)

S2

Dimension No.

Po

P1

P2

t

W

Ko

Dimension (mm)

4.00±0.1

8.00±0.

2.00±0.1

0.40±0.1

16.00±0.3 4.60±0.1

24.00±0.3 4.00±0.1

S1

Dimension (mm)

S2

8.00±0.1

11

Issue No: DPC-0000009 Rev. 15

Ver.:15

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ꢀ

DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL816 series

Precautions for Use

1. Soldering Condition

1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow Profile

Note:

Reference: IPC/JEDEC J-STD-020D

Preheat

Temperature min (T_smin

)

150 °C

200°C

Temperature max (T_smax

)

Time (T_sminto T_smax) (t_s)

Average ramp-up rate (T_smaxto T_p)

60-120 seconds

3 °C/second max

Other

Liquidus Temperature (T_L)

217 °C

Time above Liquidus Temperature (t _L)

Peak Temperature (T_P)

60-100 sec

260°C

Time within 5 °C of Actual Peak Temperature: T_P- 5°C

Ramp- Down Rate from Peak Temperature

30 s

6°C /second max.

Time 25°C to peak temperature

Reflow times

8 minutes max.

3 times

.

12

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Ver.:15

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ꢀ

DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL816 series

DISCLAIMER

1.

Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for

above specification.

2.

3.

The graphs shown in this datasheet are representing typical data only and do not show guaranteed values.

When using this product, please observe the absolute maximum ratings and the instructions for use outlined in

these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the

product which does not comply with the absolute maximum ratings and the instructions included in these

specification sheets.

4.

5.

These specification sheets include materials protected under copyright of EVERLIGHT. Reproduction in any

form is prohibited without the specific consent of EVERLIGHT.

This product is not intended to be used for military, aircraft, automotive, medical, life sustaining or life saving

applications or any other application which can result in human injury or death. Please contact authorized

Everlight sales agent for special application request.

6.

Statements regarding the suitability of products for certain types of applications are based on Everlight’s

knowledge of typical requirements that are often placed on Everlight products in generic applications. Such

statements are not binding statements about the suitability of products for a particular application. It is the

customer’s responsibility to validate that a particular product with the properties described in the product

specification is suitable for use in a particular application. Parameters provided in datasheets and/or

specifications may vary in different applications and performance may vary over time. All operating parameters,

including typical parameters, must be validated for each customer application by the customer’s technical

experts. Product specifications do not expand or otherwise modify Everlight’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

13

Issue No: DPC-0000009 Rev. 15

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Ver.:15

ꢀ


型号：	EL816A
厂家：	EVERLIGHT ELECTRONICS CO., LTD
描述：	4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
文件：	总13页 (文件大小：807K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EL816A [EVERLIGHT]

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