EL817M(A)(TU)-V_技术文档

4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 Series

Schematic

Features:

Pin Configuration

1. Anode

2. Cathode

3. Emitter

• Current transfer ratio

(CTR: 50~600% at IF = 5mA, VCE = 5V)

• High isolation voltage between input

and output (Viso = 5000Vrms)

• Creepage distance > 7.62mm

• Operating temperature up to +110°C

• Compact small outline package

•The product itself will remain within RoHS compliant version

• Compliance with EU REACH

• UL and cUL approved(No.E214129)

• VDE approved (No. 132249)

• SEMKO approved

4. Collector

• NEMKO approved

• DEMKO approved

• FIMKO approved

• CQC approved

Description

The EL817 series of devices each consist of an infrared emitting diodes,

optically coupled to a phototransistor detector.

They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.

Applications

• Programmable controllers

• System appliances, measuring instruments

• Telecommunication equipments

• Home appliances, such as fan heaters, etc.

• Signal transmission between circuits of different potentials and impedances

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 Series

Absolute Maximum Ratings (Ta=25℃)

Parameter

Symbol

Rating

60

Unit

mA

Forward current

I_F

Peak forward current (1us, pulse)

1

6

I_FP

V_R

A

V

Input

Reverse voltage

100

2.9

mW

mW/°C

Power dissipation

P_D

P_C

Derating factor (above T_a= 100°C)

150

5.8

mW

Power dissipation

Derating factor (above T_a= 100°C)

mW/°C

50

I_C

Output

Collector current

mA

V

35

V_CEO

V_ECO

P_TOT

V_ISO

T_OPR

Collector-Emitter voltage

Emitter-Collector voltage

6

V

200

5000

-55 to 110

Total Power Dissipation

Isolation Voltage*¹

mW

V rms

°C

Operating Temperature

Storage Temperature

Soldering Temperature*²

-55 to 125

260

T_STG

T_SOL

°C

Notes:

*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together.

*2 For 10 seconds

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 Series

Electro-Optical Characteristics (Ta=25℃ unless specified otherwise)

Input

Max.

1.4

Unit

V

Parameter

Symbol

Min.

-

Typ.

1.2

Condition

I_F= 20mA

V_F

I_R

Forward Voltage

-

10

µA

pF

V_R= 4V

Reverse Current

Input capacitance

30

250

V = 0, f = 1kHz

C_in

Output

Max.

Unit

nA

V

Parameter

Symbol

I_CEO

Min

-

Typ.

Condition

V_CE= 20V, I_F= 0mA

I_C= 0.1mA

Collector-Emitter dark

current

-

100

Collector-Emitter

breakdown voltage

Emitter-Collector

breakdown voltage

35

6

-

BV_CEO

BV_ECO

V

I_E= 0.1mA

Transfer Characteristics

Max.

Unit

Parameter

Symbol

Min

Typ.

Condition

EL817

50

80

-

600

160

260

400

600

200

300

EL817A

EL817B

EL817C

EL817D

EL817X

EL817Y

130

200

300

100

150

Current

Transfer

ratio

CTR

I_F= 5mA ,V_CE= 5V

%

V

Collector-Emitter

saturation voltage

-

0.1

0.2

V_CE(sat)

I_F= 20mA ,I_C= 1mA

V_IO= 500Vdc,

40~60% R.H.

Isolation resistance

Floating capacitance

Cut-off frequency

5×10¹⁰

-

1.0

-

R_IO

C_IO

fc



-

0.6

80

pF

V_IO= 0, f = 1MHz

V_CE= 5V, I_C= 2mA

R_L= 100, -3dB

kHz

Rise time

Fall time

-

18

µs

t_r

t_f

V_CE= 2V, I_C= 2mA,

R_L= 100

* Typical values at T_a= 25°C

3

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 Series

Typical Electro-Optical Characteristics Curves

4

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 Series

V_CC

I_F

Input

Pulse

I_C

R_L

Output

Input

10%

90%

Output

Pulse

R_IN

t_r

t_on

t_f

t_off

Figure 7. Switching Time Test Circuit & Waveforms

5

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 Series

Order Information

Part Number

EL817X(Y)(Z)-FV

Note

X

Y

Z

F

V

= Lead form option (S, S1, S2, M or none)

= CTR Rank (A, B, C, D, X , Y or none)

= Tape and reel option (TU, TD or none)

= Lead frame option (F: Iron, None: copper)

= VDE safety (optional)

Option

None

Description

Packing quantity

100 units per tube

1500 units per reel

2000 units per reel

Standard DIP-4

M

Wide lead bend (0.4 inch spacing)

S (TU)

S (TD)

S1 (TU)

S1 (TD)

S2 (TU)

S2 (TD)

Surface mount lead form + TU tape & reel option

Surface mount lead form + TD tape & reel option

Surface mount lead form (low profile) + TU tape & reel option

Surface mount lead form (low profile) + TD tape & reel option

Surface mount lead form (low profile) + TU tape & reel option

Surface mount lead form (low profile) + TD tape & reel option

6

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 Series

Package Dimension (Dimensions in mm)

Standard DIP Type

Option M Type

7

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 Series

Option S Type

Option S1 Type

8

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 Series

Option S2 Type

Recommended pad layout for surface mount leadform

For S option

For S1 option

For S2 option

Notes

Suggested pad dimension is just for reference only.

Please modify the pad dimension based on individual need.

9

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 Series

Device Marking

EL

817

FRYWWV

Notes

EL

817

F

R

Y

denotes EVERLIGHT

denotes Device Number

denotes Factory Code (G: China and Green part)

denotes CTR Rank (A, B, C, D , X , Y or none)

denotes 1 digit Year code

WW

V

denotes 2 digit Week code

denotes VDE (optional)

10

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 Series

Tape & Reel Packing Specifications

Option TD

Option TU

Direction of feed from reel

Tape dimensions

Dimension No.

Ao

Bo

Do

D1

E

F

Dimension (mm)

S.S1

Dimension (mm)

S2

4.90±0.1

4.88±0.1

10.40±0.1

12.55±0.1

1.5±0.1

1.50±0.1

1.75±0.1

7.50±0.1

11.5±0.1

Dimension No.

Po

P1

P2

t

W

Ko

Dimension (mm)

S.S1

Dimension (mm)

S2

4.00±0.1

8.00±0.1

2.00±0.1

0.40±0.1

16.00±0.3

24.00±0.3

4.60±0.1

4.00±0.1

11

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 Series

Precautions for Use

1. Soldering Condition

1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow Profile

Note:

Reference: IPC/JEDEC J-STD-020D

Preheat

Temperature min (T_smin

)

150 °C

Temperature max (T_smax

)

200°C

Time (Tsmin to Tsmax) (ts)

60-120 seconds

3 °C/second max

Average ramp-up rate (Tsmax to Tp)

Other

Liquidus Temperature (T_L)

217 °C

Time above Liquidus Temperature (t _L)

Peak Temperature (T_P)

60-100 sec

260°C

Time within 5 °C of Actual Peak Temperature: T_P- 5°C

Ramp- Down Rate from Peak Temperature

Time 25°C to peak temperature

Reflow times

30 s

6°C /second max.

8 minutes max.

3 times

12

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DATASHEET

4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

EL817 Series

DISCLAIMER

1.

Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for

above specification.

2.

3.

The graphs shown in this datasheet are representing typical data only and do not show guaranteed values.

When using this product, please observe the absolute maximum ratings and the instructions for use outlined in

these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the

product which does not comply with the absolute maximum ratings and the instructions included in these

specification sheets.

4.

5.

These specification sheets include materials protected under copyright of EVERLIGHT. Reproduction in any

form is prohibited without the specific consent of EVERLIGHT.

This product is not intended to be used for military, aircraft, automotive, medical, life sustaining or life saving

applications or any other application which can result in human injury or death. Please contact authorized

Everlight sales agent for special application request.

6.

Statements regarding the suitability of products for certain types of applications are based on Everlight’s

knowledge of typical requirements that are often placed on Everlight products in generic applications. Such

statements are not binding statements about the suitability of products for a particular application. It is the

customer’s responsibility to validate that a particular product with the properties described in the product

specification is suitable for use in a particular application. Parameters provided in datasheets and/or

specifications may vary in different applications and performance may vary over time. All operating parameters,

including typical parameters, must be validated for each customer application by the customer’s technical

experts. Product specifications do not expand or otherwise modify Everlight’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

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型号：	EL817M(A)(TU)-V
厂家：	EVERLIGHT ELECTRONICS CO., LTD
描述：	Transistor Output Optocoupler,
文件：	总13页 (文件大小：804K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EL817M(A)(TU)-V [EVERLIGHT]

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