PT534-6B [EVERLIGHT]
5mm Silicon Phototransistor T-1 3/4; 5毫米硅光电晶体管T-1 3/4
| 元器件型号： | PT534-6B |
| 生产厂家： | 
EVERLIGHT ELECTRONICS CO., LTD
|
| 描述和应用： | 5mm Silicon Phototransistor T-1 3/4 |
| PDF文件： | 总7页 (文件大小：185K) |
| 下载文档： | 下载PDF数据表文档文件 |
| 型号参数：PT534-6B参数 | |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 生命周期 | Active |
| 包装说明 | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| Reach Compliance Code | compliant |
| HTS代码 | 8541.40.70.80 |
| 风险等级 | 1.63 |
| Coll-Emtr Bkdn Voltage-Min | 30 V |
| 配置 | SINGLE |
| 最大暗电源 | 100 nA |
| 红外线范围 | YES |
| 标称光电流 | 1.2 mA |
| 安装特点 | THROUGH HOLE MOUNT |
| 功能数量 | 1 |
| 最大通态电流 | 0.02 A |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 光电设备类型 | PHOTO TRANSISTOR |
| 峰值波长 | 980 nm |
| 最大功率耗散 | 0.075 W |
| 形状 | ROUND |
| 尺寸 | 5 mm |
| 子类别 | Photo Transistors |
| 表面贴装 | NO |
| Base Number Matches | 1 |
MAX34334CSE前5页PDF页面详情预览
Technical Data Sheet
5mm Silicon Phototransistor T-1 3/4
PT534-6B
Features
․Fast
response time
․High
photo sensitivity
․Pb
free
Descriptions
․PT534-6B
is a high speed and high sensitive NPN silicon
phototransistor molded in a standard
φ5
mm package.
Due to its black epoxy the device is sensitive to visible and
near infrared radiation..
Applications
․Camera
․Infrared
applied system
Device Selection Guide
LED Part No.
PT
Chip
Material
Silicon
Lens Color
Black
Everlight Electronics Co., Ltd.
Device No:CDPT-053-001
http:\\www.everlight.com
Prepared date: 2007/6/13
Rev 2
Page: 1 of 7
Prepared by: wangyinsheng
PT534-6B
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.1mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Lead Soldering Temperature
Power Dissipation at (or
below)
25℃ Free Air Temperature
Symbol
V
CEO
V
ECO
I
C
Topr
Tstg
Tsol
Pc
Rating
30
5
20
-40 ~ +85
-40 ~ +100
260
75
Units
V
V
mA
℃
℃
℃
mW
Notes:
*1:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No:CDPT-053-001
http:\\www.everlight.com
Prepared date: 2007/6/13
Rev 2
Page: 2 of 7
Prepared by: wangyinsheng
PT534-6B
Electro-Optical Characteristics (Ta=25℃)
Parameter
Collector – Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Symbol
BV
CEO
BV
ECO
V
CE)(sat)
t
r
t
f
V
CE
=5V
I
C
=1mA
RL=1000Ω
Ee=0mW/cm
2
V
CE
=20V
Ee=1mW/cm
2
V
CE
=5V
---
---
Condition
I
C
=100μA
Ee=0mW/cm
2
I
E
=100μA
Ee=0mW/cm
2
I
C
=2mA
Ee=1mW/cm
2
Min
30
5
---
Typ
---
---
---
Max Unit
---
---
V
V
V
0.4
---
---
---
15
15
---
---
μS
---
100
nA
Collector Dark Current
I
CEO
On State Collector Current
Wavelength of
Peak Sensitivity
Rang of Spectral Bandwidth
I
C(on)
λp
λ
0.5
0.7
1.2
---
mA
---
---
980
800-1200
---
---
nm
nm
Everlight Electronics Co., Ltd.
Device No:CDPT-053-001
http:\\www.everlight.com
Prepared date: 2007/6/13
Rev 2
Page: 3 of 7
Prepared by: wangyinsheng
PT534-6B
Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs.
Ambient Temperature
Fig.2 Spectral Sensitivity
100
80
60
40
20
0
-25
0
25
50
75 85 100
1.0
Ta=25 C
0.8
0.6
0.4
0.2
0
700
800
900
1000 1100 1300
Fig.3 Relative Collector Current vs.
Ambient Temperature
Fig.4 Collector Current vs.
Irradiance
160
140
120
100
80
60
40
20
0
0
10
20
30
40 50
60
70
2
100
C
10
1
0.1
0.01
0.5
1
1.5
2
3
Everlight Electronics Co., Ltd.
Device No:CDPT-053-001
http:\\www.everlight.com
Prepared date: 2007/6/13
Rev 2
Page: 4 of 7
Prepared by: wangyinsheng
PT534-6B
Typical Electro-Optical Characteristics Curves
Fig.5 Collector Dark Current vs.
Ambient Temperature
Fig.6 Collector Current vs.
Collector-Emitter Voltage
10
14
12
10
10
10
8
6
10
4
2
10
0
25
50
75
100
0
0
1
2
3
4
Everlight Electronics Co., Ltd.
Device No:CDPT-053-001
http:\\www.everlight.com
Prepared date: 2007/6/13
Rev 2
Page: 5 of 7
Prepared by: wangyinsheng
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