PT534-6B [EVERLIGHT]

5mm Silicon Phototransistor T-1 3/4; 5毫米硅光电晶体管T-1 3/4
PT534-6B
元器件型号: PT534-6B
生产厂家: EVERLIGHT ELECTRONICS CO., LTD    EVERLIGHT ELECTRONICS CO., LTD
描述和应用:

5mm Silicon Phototransistor T-1 3/4
5毫米硅光电晶体管T-1 3/4

晶体光电晶体管光电晶体管
PDF文件: 总7页 (文件大小:185K)
下载文档:  下载PDF数据表文档文件
型号参数:PT534-6B参数
是否无铅 不含铅
是否Rohs认证 符合
生命周期Active
包装说明ROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Codecompliant
HTS代码8541.40.70.80
风险等级1.63
Coll-Emtr Bkdn Voltage-Min30 V
配置SINGLE
最大暗电源100 nA
红外线范围YES
标称光电流1.2 mA
安装特点THROUGH HOLE MOUNT
功能数量1
最大通态电流0.02 A
最高工作温度85 °C
最低工作温度-40 °C
光电设备类型PHOTO TRANSISTOR
峰值波长980 nm
最大功率耗散0.075 W
形状ROUND
尺寸5 mm
子类别Photo Transistors
表面贴装NO
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
Technical Data Sheet
5mm Silicon Phototransistor T-1 3/4
PT534-6B
Features
․Fast
response time
․High
photo sensitivity
․Pb
free
Descriptions
․PT534-6B
is a high speed and high sensitive NPN silicon
phototransistor molded in a standard
φ5
mm package.
Due to its black epoxy the device is sensitive to visible and
near infrared radiation..
Applications
․Camera
․Infrared
applied system
Device Selection Guide
LED Part No.
PT
Chip
Material
Silicon
Lens Color
Black
Everlight Electronics Co., Ltd.
Device No:CDPT-053-001
http:\\www.everlight.com
Prepared date: 2007/6/13
Rev 2
Page: 1 of 7
Prepared by: wangyinsheng
PT534-6B
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions
±0.1mm
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Lead Soldering Temperature
Power Dissipation at (or
below)
25℃ Free Air Temperature
Symbol
V
CEO
V
ECO
I
C
Topr
Tstg
Tsol
Pc
Rating
30
5
20
-40 ~ +85
-40 ~ +100
260
75
Units
V
V
mA
mW
Notes:
*1:Soldering time≦5 seconds.
Everlight Electronics Co., Ltd.
Device No:CDPT-053-001
http:\\www.everlight.com
Prepared date: 2007/6/13
Rev 2
Page: 2 of 7
Prepared by: wangyinsheng
PT534-6B
Electro-Optical Characteristics (Ta=25℃)
Parameter
Collector – Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Symbol
BV
CEO
BV
ECO
V
CE)(sat)
t
r
t
f
V
CE
=5V
I
C
=1mA
RL=1000Ω
Ee=0mW/cm
2
V
CE
=20V
Ee=1mW/cm
2
V
CE
=5V
---
---
Condition
I
C
=100μA
Ee=0mW/cm
2
I
E
=100μA
Ee=0mW/cm
2
I
C
=2mA
Ee=1mW/cm
2
Min
30
5
---
Typ
---
---
---
Max Unit
---
---
V
V
V
0.4
---
---
---
15
15
---
---
μS
---
100
nA
Collector Dark Current
I
CEO
On State Collector Current
Wavelength of
Peak Sensitivity
Rang of Spectral Bandwidth
I
C(on)
λp
λ
0.5
0.7
1.2
---
mA
---
---
980
800-1200
---
---
nm
nm
Everlight Electronics Co., Ltd.
Device No:CDPT-053-001
http:\\www.everlight.com
Prepared date: 2007/6/13
Rev 2
Page: 3 of 7
Prepared by: wangyinsheng
PT534-6B
Typical Electro-Optical Characteristics Curves
Fig.1Collector Power Dissipation vs.
Ambient Temperature
Fig.2 Spectral Sensitivity
100
80
60
40
20
0
-25
0
25
50
75 85 100
1.0
Ta=25 C
0.8
0.6
0.4
0.2
0
700
800
900
1000 1100 1300
Fig.3 Relative Collector Current vs.
Ambient Temperature
Fig.4 Collector Current vs.
Irradiance
160
140
120
100
80
60
40
20
0
0
10
20
30
40 50
60
70
2
100
C
10
1
0.1
0.01
0.5
1
1.5
2
3
Everlight Electronics Co., Ltd.
Device No:CDPT-053-001
http:\\www.everlight.com
Prepared date: 2007/6/13
Rev 2
Page: 4 of 7
Prepared by: wangyinsheng
PT534-6B
Typical Electro-Optical Characteristics Curves
Fig.5 Collector Dark Current vs.
Ambient Temperature
Fig.6 Collector Current vs.
Collector-Emitter Voltage
10
14
12
10
10
10
8
6
10
4
2
10
0
25
50
75
100
0
0
1
2
3
4
Everlight Electronics Co., Ltd.
Device No:CDPT-053-001
http:\\www.everlight.com
Prepared date: 2007/6/13
Rev 2
Page: 5 of 7
Prepared by: wangyinsheng
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