SP3232EBEA-L/TR_技术文档

SP3222EB/SP3232EB

True +3.0V to +5.5V RS-232 Transceivers

FEATURES

■ Meets true EIA/TIA-232-F Standards

from a +3.0V to +5.5V power supply

■ 250kbps Transmission Rate Under Load

■ 1µA Low Power Shutdown with

Receivers active (SP3222EB)

■ Interoperable with RS-232 down to a

+2.7V power source

■ Enhanced ESD Speciﬁcations:

+15kV Human Body Model

+15kV IEC61000-4-2 Air Discharge

+8kV IEC61000-4-2 Contact Discharge

DESCRIPTION

The SP3222EB/SP3232EB series is an RS-232 transceiver solution intended for portable or

hand-held applications such as notebook or laptop computers. The SP3222EB/SP3232EB

series has a high-efﬁciency, charge-pump power supply that requires only 0.1µF capacitors

in 3.3V operation. This charge pump allows the SP3222EB/SP3232EB series to deliver true

RS-232performancefromasinglepowersupplyrangingfrom+3.0Vto+5.5V.TheSP3222EB/

SP3232EB are 2-driver/2-receiver devices. The ESD tolerance of the SP3222EB/SP3232EB

devices is over +/-15kV for both Human Body Model and IEC61000-4-2 Air discharge test

methods. The SP3222EB device has a low-power shutdown mode where the devices' driver

outputs and charge pumps are disabled. During shutdown, the supply current falls to less

than 1µA.

SELECTION TABLE

Device

Power

RS-232

External

Shutdown

TTL

# of

Supplies

Drivers Receivers Components

3-State

Pins

SP3222EB

SP3232EB

+3.0V to

+5.5V

2

4 Capacitors

Yes

No

18, 20

16

+3.0V to

+5.5V

No

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SP3222EB/SP3232EB_106_022316

1

ABSOLUTE MAXIMUM RATINGS

These are stress ratings only and functional operation

of the device at these ratings or any other above those

indicated in the operation sections of the speciﬁcations

below is not implied. Exposure to absolute maximum

rating conditions for extended periods of time may

affect reliability and cause permanent damage to the

device.

Power Dissipation per package

V_CC.......................................................-0.3V to +6.0V

V+ (NOTE 1).......................................-0.3V to +7.0V

V- (NOTE 1)........................................+0.3V to -7.0V

V+ + |V-| (NOTE 1)...........................................+13V

20-pin SSOP (derate 9.25mW/^oC above +70^oC)..............750mW

18-pin SOIC (derate 15.7mW/^oC above +70^oC)..............1260mW

20-pin TSSOP (derate 11.1mW/^oC above +70^oC).............890mW

16-pin SSOP (derate 9.69mW/^oC above +70^oC)...............775mW

16-pin Wide SOIC (derate 11.2mW/^oC above +70^oC)........900mW

16-pin TSSOP (derate 10.5mW/^oC above +70^oC)..............850mW

16-pin nSOIC (derate 13.57mW/^oC above +70^oC)...........1086mW

I

_CC(DC V_CCor GND current).........................+100mA

Input Voltages

TxIN, EN..............................................-0.3V to +6.0V

RxIN...................................................................+25V

Output Voltages

TxOUT.............................................................+13.2V

RxOUT, .......................................-0.3V to (V_CC+0.3V)

Short-Circuit Duration

Maximum Junction Temperature .......................................+125°C

Thermal Resistance (16-pin TSSOP) ΘJA ...................100.4°C/W

Thermal Resistance (16-pin TSSOP) ΘJC .....................19.0°C/W

Thermal Resistance (16-pin QFN) ΘJA ......................... 44.0°C/W

Thermal Resistance (16-pin QFN) ΘJC ...........................7.3°C/W

TxOUT....................................................Continuous

Storage Temperature......................-65°C to +150°C

NOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V.

NOTE 2: Driver Input hysteresis is typically 250mV.

ELECTRICAL CHARACTERISTICS

Unless otherwise noted, the following speciﬁcations apply for V_CC= +3.0V to +5.5V with T_AMB= T_MINto T_MAX

C1 - C4 = 0.1µF.

,

PARAMETER

MIN.

TYP.

MAX. UNITS CONDITIONS

DC CHARACTERISTICS

Supply Current

0.3

1.0

10

mA

µA

no load, V_CC= 3.3V,

_AMB= 25^oC, TxIN = GND or V_CC

T

Shutdown Supply Current

SHDN = GND, VCC = 3.3V,

_AMB= 25^oC, TxIN = Vcc or GND

T

LOGIC INPUTS AND RECEIVER OUTPUTS

Input Logic Threshold LOW

GND

0.8

V

TxIN, EN, SHDN, Note 2

Input Logic Threshold HIGH

Input Leakage Current

2.0

2.4

Vcc

+1.0

V

Vcc = 3.3V, Note 2

Vcc = 5.0V, Note 2

V

+0.01

+0.05

µA

TxIN, EN, SHDN,

T_AMB= +25^oC, V_IN= 0V to V_CC

Output Leakage Current

Output Voltage LOW

Output Voltage HIGH

DRIVER OUTPUTS

Output Voltage Swing

+10

0.4

µA

V

Receivers disabled, V_OUT= 0V to V_CC

I_OUT= 1.6mA

V

_CC-0.6 V_CC-0.1

V

I_OUT= -1.0mA

+5.0

+5.4

V

All driver outputs loaded with 3kΩ to

GND, T_AMB= +25^oC

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SP3222EB/SP3232EB_106_022316

2

ELECTRICAL CHARACTERISTICS

Unless otherwise noted, the following speciﬁcations apply for V_CC= +3.0V to +5.5V with T_AMB= T_MINto T_MAX

C1 - C4 = 0.1µF. Typical values apply at V_CC= +3.3V or +5.0V and T_AMB= 25°C.

,

PARAMETER

MIN.

TYP. MAX. UNITS CONDITIONS

DRIVER OUTPUTS (continued)

Output Resistance

300

Ω

mA

µA

V_CC= V+ = V- = 0V, V_OUT=+2V

V_OUT= 0V

Output Short-Circuit Current

Output Leakage Current

+35

+60

+25

V_CC= 0V or 3.0V to 5.5V, V_OUT

+12V, Drivers disabled

=

RECEIVER INPUTS

Input Voltage Range

Input Threshold LOW

Input Threshold HIGH

Input Hysteresis

-15

0.6

0.8

15

V

1.2

1.5

1.8

0.3

5

Vcc = 3.3V

Vcc = 5.0V

Vcc = 3.3V

Vcc = 5.0V

V

2.4

V

Input Resistance

3

7

kΩ

TIMING CHARACTERISTICS

Maximum Data Rate

250

kbps

R_L= 3kΩ, C_L= 1000pF, one

driver active

Receiver Propagation Delay, t_PHL

Receiver Propagation Delay, t_PLH

0.15

µs

Receiver input to Receiver

output, C_L= 150pF

Receiver input to Receiver

output, C_L= 150pF

Receiver Output Enable Time

Receiver Output Disable Time

Driver Skew

200

100

ns

| t_PHL- t_PLH|, T_AMB= 25°C

Receiver Skew

50

ns

| t_PHL- t_PLH|

Transition-Region Slew Rate

30

V/µs

Vcc = 3.3V, R_L= 3kΩ,

C_L= 1000pF, T_AMB= 25°C,

measurements taken from -3.0V

to +3.0V or +3.0V to -3.0V

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SP3222EB/SP3232EB_106_022316

3

TYPICAL PERFORMANCE CHARACTERISTICS

Unless otherwise noted, the following performance characteristics apply for V_CC= +3.3V, 1000kbps data rate, all

drivers loaded with 3kΩ, 0.1µF charge pump capacitors, and T_AMB= +25°C.

Figure 1. Transmitter Output Voltage vs Load

Capacitance

Figure 2. Slew Rate vs Load Capacitance

Figure 3. Supply Current VS. Load Capacitance

when Transmitting Data

Figure 4. Supply Current VS. Supply Voltage

Figure 5. Transmitter Output Voltage vs Supply

Voltage

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SP3222EB/SP3232EB_106_022316

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PIN FUNCTION

PIN NUMBER

SP3222EB

SP3232EB

SOIC SSOP

SSOP QFN

NAME

EN

FUNCTION

TSSOP TSSOP

NSOIC

WSOIC

Receiver Enable. Apply Logic LOW for normal operation.

Apply logic HIGH to disable the receiver outputs (high-Z state)

1

-

C1+

V+

Positive terminal of the voltage doubler charge-pump capacitor

+5.5V output generated by the charge pump

2

3

2

3

1

2

15

16

1

C1-

C2+

C2-

V-

Negative terminal of the voltage doubler charge-pump capacitor

Positive terminal of the inverting charge-pump capacitor

Negative terminal of the inverting charge-pump capacitor

-5.5V output generated by the charge pump

4

3

5

4

2

6

5

3

7

6

4

T₁OUT RS-232 driver output.

T₂OUT RS-232 driver output.

15

8

17

8

14

7

12

5

R₁IN

R₂IN

RS-232 receiver input

14

9

16

9

13

8

11

6

R₁OUT TTL/CMOS receiver output

R₂OUT TTL/CMOS receiver output

13

10

12

11

16

17

15

10

13

12

18

19

12

9

10

7

T₁IN

T₂IN

GND

V_CC

TTL/CMOS driver input

11

10

15

16

9

TTL/CMOS driver input

8

Ground.

13

14

+3.0V to +5.5V supply voltage

Shutdown Control Input. Drive HIGH for normal device opera-

SHDN tion. Drive LOW to shutdown the drivers (high-Z output) and

the on-board power supply

18

-

20

-

N.C.

No Connect

11, 14

Table 1. Device Pin Description

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SP3222EB/SP3232EB_106_022316

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PINOUT

Figure 6. Pinout Conﬁgurations for the SP3222EB

Figure 7. Pinout Conﬁguration for the SP3232EB

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SP3222EB/SP3232EB_106_022316

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TYPICAL OPERATING CIRCUITS

Figure 8. SP3222EB Typical Operating Circuits

Figure 9. SP3232EB Typical Operating Circuit

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SP3222EB/SP3232EB_106_022316

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DESCRIPTION

The SP3222EB/SP3232EB transceivers

meet the EIA/TIA-232 and ITU-T V.28/V.24

communication protocols and can be imple-

mented in battery-powered, portable, or

hand-held applications such as notebook

or palmtop computers. The SP3222EB/

SP3232EB devices feature Exar's propri-

etary on-board charge pump circuitry that

generates ±5.5V for RS-232 voltage levels

from a single +3.0V to +5.5V power supply.

This series is ideal for +3.3V-only systems,

mixed+3.3Vto+5.5Vsystems,or+5.0V-only

systems that require true RS-232 perfor-

mance.TheSP3222EB/SP3232EB devices

can operate at a data rate of 250kbps when

fully loaded.

The drivers can guarantee a data rate of

250kbps fully loaded with 3kΩ in parallel

with 1000pF, ensuring compatability with

PC-to-PC communication software.

Theslewrateofthedriverisinternallylimited

to a maximum of 30V/µs in order to meet the

EIA standards (EIA RS-232D 2.1.7, Para-

graph 5). The transition of the loaded output

fromHIGHtoLOWalsomeetthemonotonic-

ity requirements of the standard.

Figure 10 shows a loopback test circuit

used to test the RS-232 Drivers. Figure

11 shows the test results of the loopback

circuit with all drivers active at 120kbps

with RS-232 loads in parallel with a

1000pF capacitor. Figure 12 shows the

test results where one driver was active

at 250kbps and all drivers loaded with an

RS-232 receiver in parallel with 1000pF

capacitors. A solid RS-232 data transmis-

sion rate of 250kbps provides compatibility

with many designs in personal computer

peripherals and LAN applications.

The SP3222EB and SP3232EB are 2-

driver/2- receiver devices ideal for portable

or hand-held applications. The SP3222EB

featuresa1µA shutdownmodethatreduces

power consumption and extends battery life

in portable systems. Its receivers remain

active in shutdown mode, allowing external

devices such as modems to be monitored

using only 1µA supply current.

The SP3222EB driver's output stages are

turned off (tri-state) when the device is in

shutdown mode. When the power is off, the

SP3222EB device permits the outputs to be

driven up to +/-12V. The driver's inputs do

nothavepull-upresistors. Designersshould

connect unused inputs to Vcc or GND.

THEORY OF OPERATION

The SP3222EB/SP3232EB series is made

up of three basic circuit blocks:

1. Drivers

2. Receivers

3. The Exar proprietary charge pump

In the shutdown mode, the supply current

falls to less than 1µA, where SHDN = LOW.

When the SP3222EB device is shut down,

the device's driver outputs are disabled (tri-

stated) and the charge pumps are turned off

with V+ pulled down to Vcc and V- pulled to

GND. The time required to exit shutdown is

typically 100µs. Connect SHDN to Vcc if the

shutdown mode is not used.

Drivers

The drivers are inverting level transmitters

that convert TTL or CMOS logic levels to

+5.0V EIA/TIA-232 levels with an inverted

sense relative to the input logic levels.

Typically, the RS-232 output voltage swing

is +5.4V with no load and +5V minimum fully

loaded. The driver outputs are protected

against inﬁnite short-circuits to ground with-

out degradation in reliability. Driver outputs

will meet EIA/TIA-562 levels of +/-3.7V with

supply voltages as low as 2.7V.

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SP3222EB/SP3232EB_106_022316

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DESCRIPTION

Receivers

The Receivers convert EIA/TIA-232 levels

to TTL or CMOS logic output levels. The

SP3222EB receivers have an inverting

tri-state output. These receiver outputs

(RxOUT) are tri-stated when the enable

control EN = HIGH. In the shutdown mode,

the receivers can be active or inactive. EN

hasnoeffectonTxOUT.Thetruthtablelogic

oftheSP3222EBdriverandreceiveroutputs

can be found in Table 2.

SHDN

EN

TxOUT

RxOUT

0

1

0

1

0

1

Tri-state

Active

Tri-state

Active

Tri-state

Figure 10. SP3222EB/SP3232EB Driver Loopback

Test Circuit

Table 2. SP3222EB Truth Table Logic for Shutdown

and Enable Control

Since receiver input is usually from a trans-

mission line where long cable lengths and

system interference can degrade the signal,

the inputs have a typical hysteresis margin

of 300mV. This ensures that the receiver

is virtually immune to noisy transmission

lines. Should an input be left unconnected,

an internal 5kΩ pulldown resistor to ground

will commit the output of the receiver to a

HIGH state.

Figure 11. Loopback Test results at 120kbps

Charge Pump

The charge pump is an Exar-patended

design (U.S. 5,306,954) and uses a unique

approach compared to older less-efﬁcient

designs.Thechargepumpstillrequiresfour

external capacitors, but uses a four-phase

voltage shifting technique to attain sym-

metrical 5.5V power supplies. The internal

power supply consists of a regulated dual

charge pump that provides output voltages

of +/-5.5V regardless of the input voltage

(Vcc) over the +3.0V to +5.5V range.

Figure 12. Loopback Test results at 250kbps

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SP3222EB/SP3232EB_106_022316

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DESCRIPTION

Inmostcircumstances,decouplingthepower

supply can be achieved adequately using

a 0.1µF bypass capacitor at C5 (refer to

ﬁgures 8 and 9)

Phase 4

— V transfer — The fourth phase of

the c^Dlo^Dck connects the negative terminal

of C₂to GND, and transfers this positive

generated voltage across C₂to C₄, the

V_DDstorage capacitor. This voltage is

regulated to +5.5V. At this voltage, the in-

ternal oscillator is disabled. Simultaneous

with the transfer of the voltage to C₄, the

positive side of capacitor C is switched

to V and the negative¹side is con-

nect^Ce^Cd to GND, allowing the charge

pump cycle to begin again. The charge

pump cycle will continue as long as the

operational conditions for the internal

oscillator are present.

In applications that are sensitive to power-

supply noise, decouple Vcc to ground with a

capacitorofthesamevalueascharge-pump

capacitor C1. Physically connect bypass

capcitors as close to the IC as possible.

The charge pump operates in a discontinu-

ous mode using an internal oscillator. If the

output voltages are less than a magnitude

of 5.5V, the charge pump is enabled. If the

outputvoltages exceedamagnitudeof5.5V,

the charge pump is disabled. This oscillator

controls the four phases of the voltage shift-

ing. A description of each phase follows.

Since both V⁺and V^–are separately gener-

ated from V_CC, in a no–load condition V⁺

and V^–will be symmetrical. Older charge

pump approaches that generate V^–from

V⁺will show a decrease in the magnitude

of V^–compared to V⁺due to the inherent

inefﬁciencies in the design.

Phase 1

— V_SScharge storage — During this phase

oftheclockcycle,thepositivesideofcapaci-

tors C₁and C₂are initially charged to V_CC.

C_l⁺is then switched to GND and the charge

in C₁^–is transferred to C ^–. Since C₂⁺is con-

nected to V , the volta²ge potential across

capacitor C₂^CCis now 2 times V_CC.

The clock rate for the charge pump typically

operatesatgreaterthan250kHz. Theexter-

nal capacitors can be as low as 0.1µF with

a 16V breakdown voltage rating.

Phase 2

— V transfer — Phase two of the clock

conn^Se^SctsthenegativeterminalofC₂totheV_SS

storagecapacitorandthepositiveterminalof

C₂to GND. This transfers a negative gener-

ated voltage to C₃. This generated voltage is

regulated to a minimum voltage of -5.5V.

Simultaneous with the transfer of the volt-

age to C₃, the positive side of capacitor C₁

is switched to V_CCand the negative side is

connected to GND.

Phase 3

— V_DDcharge storage — The third phase of

the clock is identical to the ﬁrst phase — the

charge transferred in C₁produces –V_CCin

the negative terminal of C , which is applied

to the negative side of ca¹pacitor C₂. Since

C ⁺is at V , the voltage potential across C₂

is²2 times^CV^C_CC.

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SP3222EB/SP3232EB_106_022316

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DESCRIPTION

Figure 13. Charge Pump — Phase 1

Figure 14. Charge Pump — Phase 2

Figure 15. Charge Pump Waveforms

Figure 16. Charge Pump — Phase 3

Figure 17. Charge Pump — Phase 4

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DESCRIPTION

ESD TOLERANCE

thesystemisrequiredtowithstandanamount

of static electricity when ESD is applied to

points and surfaces of the equipment that

are accessible to personnel during normal

The SP3222EB/SP3232EB series incor-

porates ruggedized ESD cells on all driver

output and receiver input pins. The ESD

structure is improved over our previous

family for more rugged applications and

environments sensitive to electro-static

discharges and associated transients. The

improved ESD tolerance is at least +15kV

without damage nor latch-up.

usage. The transceiver IC receives most

of the ESD current when the ESD source is

appliedtotheconnectorpins. Thetestcircuit

for IEC61000-4-2 is shown on Figure 19.

TherearetwomethodswithinIEC61000-4-2,

the Air Discharge method and the Contact

Discharge method.

With the Air Discharge Method, an ESD

voltage is applied to the equipment under

test (EUT) through air. This simulates an

electricallychargedpersonreadytoconnect

a cable onto the rear of the system only to

ﬁndanunpleasantzapjustbeforetheperson

touches the back panel. The high energy

potential on the person discharges through

anarcingpathtotherearpanelofthesystem

before he or she even touches the system.

This energy, whether discharged directly or

throughair,ispredominantlyafunctionofthe

discharge current rather than the discharge

voltage. Variableswithanairdischargesuch

asapproachspeedoftheobjectcarryingthe

ESD potential to the system and humidity

will tend to change the discharge current.

For example, the rise time of the discharge

current varies with the approach speed.

There are different methods of ESD testing

applied:

a) MIL-STD-883, Method 3015.7

b) IEC61000-4-2 Air-Discharge

c) IEC61000-4-2 Direct Contact

The Human Body Model has been the

generally accepted ESD testing method

for semi-conductors. This method is also

speciﬁed in MIL-STD-883, Method 3015.7

forESDtesting.ThepremiseofthisESDtest

is to simulate the human body’s potential to

store electro-static energy and discharge it

to an integrated circuit. The simulation is

performed by using a test model as shown

in Figure 18. This method will test the IC’s

capability to withstand an ESD transient

during normal handling such as in manu-

facturing areas where the ICs tend to be

handled frequently.

The Contact Discharge Method applies the

ESDcurrentdirectlytotheEUT. Thismethod

was devised to reduce the unpredictability

of the ESD arc. The discharge current rise

time is constant since the energy is directly

transferred without the air-gap arc. In situ-

ations such as hand held systems, the ESD

charge can be directly discharged to the

The IEC-61000-4-2, formerly IEC801-2, is

generallyusedfortestingESDonequipment

and systems. For system manufacturers,

theymustguaranteeacertainamountofESD

protection since the system itself is exposed

totheoutsideenvironmentandhumanpres-

ence. ThepremisewithIEC61000-4-2isthat

Figure 18. ESD Test Circuit for Human Body Model

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SP3222EB/SP3232EB_106_022316

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DESCRIPTION

Figure 19. ESD Test Circuit for IEC61000-4-2

equipment from a person already holding

the equipment. The current is transferred

on to the keypad or the serial port of the

equipment directly and then travels through

the PCB and ﬁnally to the IC.

The higher C_Svalue and lower R value in

the IEC61000-4-2 model are more^Sstringent

than the Human Body Model. The larger

storage capacitor injects a higher voltage

to the test point when SW2 is switched on.

The lower current limiting resistor increases

the current charge onto the test point.

The circuit models in Figures 18 and 19 rep-

resentthetypicalESDtestingcircuitusedfor

allthreemethods. TheC_Sisinitiallycharged

with the DC power supply when the ﬁrst

switch (SW1) is on. Now that the capacitor

is charged, the second switch (SW2) is on

while SW1 switches off. The voltage stored

in the capacitor is then applied through R ,

the current limiting resistor, onto the devic^Se

under test (DUT). In ESD tests, the SW2

switch is pulsed so that the device under

test receives a duration of voltage.

For the Human Body Model, the current

limitingresistor(R_S)andthesourcecapacitor

(C_S) are 1.5kΩ an 100pF, respectively. For

IEC-61000-4-2, the current limiting resistor

(R ) and the source capacitor (C_S) are 330Ω

an^S150pF, respectively.

Figure 20. ESD Test Waveform for IEC61000-4-2

DEVICE PIN

TESTED

HUMAN BODY

MODEL

IEC61000-4-2

Air Discharge Direct Contact

Level

Driver Outputs

Receiver Inputs

+15kV

+8kV

4

Table 3. Transceiver ESD Tolerance Levels

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SP3222EB/SP3232EB_106_022316

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PACKAGE: 20 PIN SSOP

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SP3222EB/SP3232EB_106_022316

14

PACKAGE: 16 PIN SSOP

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SP3222EB/SP3232EB_106_022316

15

PACKAGE: 16 PIN WSOIC

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SP3222EB/SP3232EB_106_022316

16

PACKAGE: 18 PIN WSOIC

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SP3222EB/SP3232EB_106_022316

17

PACKAGE: 16 PIN nSOIC

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SP3222EB/SP3232EB_106_022316

18

PACKAGE: 16 PIN TSSOP

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SP3222EB/SP3232EB_106_022316

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PACKAGE: 20 PIN TSSOP

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SP3222EB/SP3232EB_106_022316

20

PACKAGE: 16 PIN QFN

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7000• www.exar.com

SP3222EB/SP3232EB_106_022316

21

ORDERING INFORMATION

Part Number

Temp. Range

0°C to +70°C

-40°C to +85°C

Package

SP3222EBCA-L

SP3222EBCA-L/TR

SP3222EBCT-L

SP3222EBCT-L/TR

SP3222EBCY-L

SP3222EBCY-L/TR

SP3222EBEA-L

SP3222EBEA-L/TR

SP3222EBET-L

20 Pin SSOP

18 Pin WSOIC

20 Pin TSSOP

20 Pin SSOP

18 Pin WSOIC

20 Pin TSSOP

SP3222EBET-L/TR

SP3222EBEY-L

SP3222EBEY-L/TR

Part Number

Temp. Range

0°C to +70°C

-40°C to +85°C

Package

SP3232EBCA-L

SP3232EBCA-L/TR

SP3232EBCN-L

SP3232EBCN-L/TR

SP3232EBCT-L

16 Pin SSOP

16 Pin NSOIC

16 Pin WSOIC

16 Pin TSSOP

16 Pin SSOP

16 Pin NSOIC

16 Pin WSOIC

16 Pin TSSOP

16 Pin QFN

SP3232EBCT-L/TR

SP3232EBCY-L

SP3232EBCY-L/TR

SP3232EBEA-L

SP3232EBEA-L/TR

SP3232EBEN-L

SP3232EBEN-L/TR

SP3232EBET-L

SP3232EBET-L/TR

SP3232EBEY-L

SP3232EBEY-L/TR

SP3232EBER-L

SP3232EBER-L/TR

16 Pin QFN

Note: "/TR" is for tape and Reel option. "-L" is for lead free packaging

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7000 • www.exar.com

SP3222EB/SP3232EB_106_022316

22

REVISION HISTORY

DATE

REVISION DESCRIPTION

11/02/05

09/09/09

--

Legacy Sipex Datasheet

1.0.0

Convert to Exar Format, Update ordering information and

change revision to 1.0.0.

06/07/11

03/14/13

8/14/14

5/28/15

1.0.1

1.0.2

1.0.3

1.0.4

Remove obsolete devices per PDN 110510-01 and change

ESD rating to IEC-61000-4-2.

Correct type error to RX input voltage range and TX transi-

tion region slew rate condition.

Add Max Junction temperature and package thermal infor-

mation.

Update Absolute Max Rating for RxIN input voltage to +/-25V,

update logo.

10/27/15

2/23/16

1.0.5

1.0.6

Add SP3232EBER (QFN_16) preliminary package option.

Remove preminary status of QFN_16 package option.

Notice

EXAR Corporation reserves the right to make changes to any products contained in this publication in order to improve design, performance or reli-

ability. EXAR Corporation assumes no representation that the circuits are free of patent infringement. Charts and schedules contained herein are

only for illustration purposes and may vary depending upon a user's speciﬁc application. While the information in this publication has been carefully

checked; no responsibility, however, is assumed for inaccuracies.

EXAR Corporation does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to signiﬁcantly affect its safety or effectiveness. Products are not authorized for

use in such applications unless EXAR Corporation receives, in writting, assurances to its satisfaction that: (a) the risk of injury or damage has been

minimized ; (b) the user assumes all such risks; (c) potential liability of EXAR Corporation is adequately protected under the circumstances.

Datasheet February 2016

Send your serial transceiver technical inquiry with technical details to: serialtechsupport@exar.com

Reproduction, in part or whole, without the prior written consent of EXAR Corporation is prohibited.

Exar Corporation 48720 Kato Road, Fremont CA, 94538 • 510-668-7000• www.exar.com

SP3222EB/SP3232EB_106_022316

23

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Exar:

SP3222EBCA-L SP3232EBCN-L SP3232EBCA-L SP3232EBEN-L SP3222EBEY-L SP3232EBCY-L

SP3222EBCY-L SP3232EBEA-L SP3232EBEY-L SP3222EBEA-L SP3232EBEY-L/TR SP3232EBCY-L/TR

SP3222EBEY-L/TR SP3232EBCT-L SP3222EBET-L/TR SP3222EBET-L SP3232EBET-L SP3222EBCT-L/TR

SP3222EBCT-L SP3222EBEA-L/TR SP3232EBET-L/TR SP3232EBEA-L/TR SP3232EBCN-L/TR SP3232EBCA-

L/TR SP3222EBCA-L/TR SP3222EBCY-L/TR SP3232EBCT-L/TR SP3232EBEN-L/TR SP3232EBEP-L


型号：	SP3232EBEA-L/TR
厂家：	EXAR CORPORATION
描述：	True 3.0V to 5.5V RS-232 Transceivers 驱动光电二极管接口集成电路驱动器
文件：	总24页 (文件大小：644K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SP3232EBEA-L/TR [EXAR]

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