EFA060BV [EXCELICS]
Low Distortion GaAs Power FET; 低失真功率的GaAs FET
| 型号： | EFA060BV |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | Low Distortion GaAs Power FET |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFA060B/EFA060BV
Excelics
DATA SHEET
Low Distortion GaAs Power FET
350
50
+25.0dBm TYPICAL OUTPUT POWER
10.5dB TYPICAL POWER GAIN FOR EFA060B AND
12.0dB FOR EFA060BV AT 12GHz
•
•
D
48
0.3 X 600 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
•
•
•
350
100
G
40
95
50
EFA060BV WITH VIA HOLE SOURCE GROUNDING
Idss SORTED IN 10mA PER BIN RANGE
•
•
Chip Thickness: 75 ± 20 microns
All Dimensions In Microns
:
Via Hole
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
No Via Hole For EFA060B
SYMBOLS
PARAMETERS/TEST CONDITIONS
EFA060B
TYP
UNIT
EFA060BV
MIN
MAX
MIN
TYP
MAX
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
f=18GHz
23.0
25.0
25.0
23.0
25.0
25.0
P1dB
G1dB
PAE
Idss
Gm
dBm
dB
%
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
f=18GHz
9.0
10.5
8.0
10.5
12.0
10.0
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
f=12GHz
35
36
Saturated Drain Current Vds=3V, Vgs=0V
100
70
170
240
-3.5
100
70
170
240
-3.5
mA
mS
V
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
90
-2.0
-15
-14
75
90
-2.0
-15
-14
55
Vp
Vds=3V, Ids=1.5mA
BVgd
BVgs
Rth
Drain Breakdown Voltage Igd=1.0mA
Source Breakdown Voltage Igs=1.0mA
Thermal Resistance (Au-Sn Eutectic Attach)
-12
-7
-12
-7
V
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
EFA060B
EFA060BV
ABSOLUTE1
CONTINUOUS2
ABSOLUTE1
CONTINUOUS2
Vds
Vgs
Ids
Drain-Source Voltage
Gate-Source Voltage
Drain Current
12V
8V
12V
8V
-8V
-4V
-8V
-4V
Idss
190mA
2.5mA
Idss
Idss
Igsf
Pin
Forward Gate Current
Input Power
15mA
23dBm
15mA
23dBm
2.5mA
@ 3dB
@ 3dB
Compression
Compression
Tch
Tstg
Pt
Channel Temperature
Storage Temperature
Total Power Dissipation
175oC
150oC
175oC
150oC
-65/175oC
-65/150oC
-65/175oC
-65/150oC
1.8W
1.5W
2.5W
2.1W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA060B/EFA060BV
DATA SHEET
Low Distortion GaAs Power FET
EFA060B
P-1dB & PAE vs, Vds
Pout & PAE vs. Pin
f = 12 GHz
Ids = 50% Idss
f = 12 GHz
Vds = 8V, Ids = 50% Idss
30
25
20
15
60
55
50
45
40
35
30
25
20
40
PA
E
35
30
25
Pout
20
15
10
5
10
4
0
5
6
7
8
9
10
0
5
10
15
20
25
Drain-Source Voltage (V)
Pin (dBm)
EFA060B
S-PARAMETERS
8V, 1/2 Idss
EFA060BV
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.969 -31.6 7.567 157.9 0.021 71.4 0.580 -14.0
2.0 0.939 -60.4 6.840 139.5 0.038 57.0 0.548 -27.1
3.0 0.900 -85.0 5.997 123.4 0.051 44.0 0.506 -37.2
4.0 0.879 -105.5 5.203 109.8 0.058 33.6 0.470 -45.4
5.0 0.866 -122.6 4.517 98.0 0.062 24.7 0.440 -52.1
6.0 0.859 -135.6 3.933 88.2 0.063 18.4 0.423 -57.8
7.0 0.860 -145.8 3.475 79.9 0.064 12.8 0.412 -62.8
8.0 0.860 -154.1 3.108 72.1 0.065 8.5 0.406 -68.0
9.0 0.861 -160.9 2.812 65.1 0.065 4.3 0.403 -73.3
10.0 0.861 -166.7 2.575 58.7 0.065 0.1 0.406 -78.6
11.0 0.859 -172.2 2.380 52.1 0.065 -3.1 0.408 -84.9
12.0 0.858 -177.9 2.225 45.4 0.065 -6.5 0.414 -91.0
13.0 0.853 176.4 2.083 38.7 0.066 -10.1 0.417 -97.5
14.0 0.846 169.8 1.963 31.6 0.066 -13.8 0.426 -104.1
15.0 0.845 163.0 1.847 24.3 0.067 -18.1 0.435 -110.6
16.0 0.843 156.0 1.724 17.0 0.067 -21.2 0.447 -117.0
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0 0.981 -31.1 6.867 158.9 0.020 73.0 0.540 -11.0
2.0 0.955 -58.2 6.229 140.5 0.037 60.1 0.500 -22.2
3.0 0.920 -80.1 5.422 125.4 0.048 48.3 0.457 -30.0
4.0 0.889 -97.0 4.722 112.7 0.054 39.5 0.421 -36.6
5.0 0.869 -110.8 4.163 101.8 0.058 33.4 0.396 -42.8
6.0 0.855 -121.8 3.692 92.3 0.060 28.1 0.373 -49.0
7.0 0.843 -130.5 3.322 83.9 0.061 24.4 0.361 -54.9
8.0 0.837 -139.1 3.033 75.6 0.062 19.3 0.352 -61.5
9.0 0.825 -146.9 2.769 67.7 0.062 15.3 0.344 -68.7
10.0 0.818 -153.2 2.566 60.9 0.061 12.0 0.338 -76.0
11.0 0.815 -160.1 2.419 53.4 0.062 9.2 0.336 -84.8
12.0 0.813 -168.3 2.278 45.5 0.062 5.6 0.335 -94.3
13.0 0.819 -175.0 2.135 37.8 0.062 2.3 0.332 -104.7
14.0 0.817 178.5 2.018 30.1 0.063 0.2 0.335 -115.4
15.0 0.816 171.4 1.887 22.1 0.063 -3.2 0.340 -127.6
16.0 0.824 164.7 1.755 13.9 0.063 -6.5 0.353 -139.9
17.0 0.844 148.9 1.610
18.0 0.849 141.9 1.497
19.0 0.856 135.8 1.384
9.6 0.068 -26.2 0.458 -123.4
2.5 0.066 -29.8 0.470 -129.3
-4.4 0.065 -33.0 0.483 -135.2
17.0 0.835 160.1 1.619
18.0 0.847 156.0 1.505
19.0 0.854 151.9 1.385
6.6 0.064 -8.5 0.369 -152.7
-0.6 0.064 -10.1 0.391 -164.3
-8.1 0.064 -10.7 0.421 -175.1
20.0 0.865 131.1 1.278 -10.7 0.065 -35.6 0.498 -140.7
21.0 0.882 130.5 1.175 -15.9 0.063 -38.7 0.518 -149.1
22.0 0.888 128.4 1.091 -21.1 0.062 -39.2 0.542 -155.0
23.0 0.898 127.4 1.016 -25.8 0.060 -40.2 0.565 -160.1
24.0 0.902 126.6 0.953 -30.5 0.059 -39.8 0.589 -165.2
25.0 0.905 126.3 0.911 -34.6 0.058 -40.5 0.613 -169.8
26.0 0.899 124.8 0.860 -39.1 0.058 -40.6 0.640 -172.6
20.0 0.856 150.2 1.256 -15.0 0.064 -12.0 0.455 175.1
21.0 0.852 148.9 1.137 -20.4 0.064 -11.5 0.487 166.1
22.0 0.863 149.8 1.040 -25.3 0.064 -10.4 0.522 158.2
23.0 0.871 150.5 0.976 -29.6 0.064 -7.2 0.551 151.6
24.0 0.879 149.1 0.913 -35.4 0.066 -4.5 0.579 145.6
25.0 0.878 147.4 0.862 -40.4 0.069 -1.7 0.604 141.7
26.0 0.876 147.5 0.803 -44.2 0.070 0.7 0.619 136.2
Note: The data included 0.7 mils diameter Au bonding wires; 1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each;
no source wires for EFA060BV.
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