EFA960CR-180F [EXCELICS]
Low Distortion GaAs Power FET; 低失真功率的GaAs FET
| 型号： | EFA960CR-180F |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | Low Distortion GaAs Power FET |
| 文件： | 总2页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EFA960CR-180F
ISSUED 05/11/2006
Low Distortion GaAs Power FET
FEATURES
•
•
•
•
•
•
Non-Hermetic 180mil Metal Flange Package
+36.5 dBm Typical Output Power
16.0 dB Typical Power Gain at 2GHz
0.5 x 9600 Micron Recessed “Mushroom” Gate
Si3N4 Passivation
Advanced Epitaxial Heterojunction Profile
Provides High Power Efficiency, Linearity
and Reliability
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
PARAMETERS/TEST CONDITIONS1
MIN
35.0
TYP
36.5
36.5
16.0
11.0
MAX
UNITS
Output Power at 1dB Compression
VDS = 8 V, IDS ≈ 50% IDSS
f = 2GHz
f = 4GHz
dBm
14.5
Gain at 1dB Compression
VDS = 8 V, IDS ≈ 50% IDSS
f = 2GHz
f = 4GHz
G1dB
PAE
dB
%
Power Added Efficiency at 1dB Compression
34
VDS = 8 V, IDS ≈ 50% IDSS
f = 2GHz
VDS = 3 V, VGS = 0 V
DS = 3 V, VGS = 0 V
VDS = 3 V, IDS = 28 mA
IDSS
GM
Saturated Drain Current
1600
1100
2720
1450
-2.0
-15
3520
-3.5
mA
mS
V
Transconductance
V
VP
Pinch-off Voltage
BVGD
BVGS
RTH
Drain Breakdown Voltage
Source Breakdown Voltage
Thermal Resistance
I
GD = 9.6 mA
GS = 9.6 mA
-13
-7
V
I
-14
V
oC/W
6*
* Overall Rth depends on case mounting.
MAXIMUM RATINGS AT 25OC
SYMBOLS
Vds
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reversed Gate Current
Input Power
ABSOLUTE1
CONTINUOUS2
8V
12V
-5V
Vgs
-3V
Igsf
43.2 mA
-7.2 mA
33 dBm
175oC
14.4 mA
-2.4 mA
Igsr
Pin
@ 3dB Compression
175oC
Tch
Channel Temperature
Storage Temperature
Total Power Dissipation
Tstg
Pt
-65/175oC
-65/175oC
23 W
23 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised May 2006
EFA960CR-180F
ISSUED 05/11/2006
Low Distortion GaAs Power FET
S-PARAMETERS
VDS = 8 V, IDS ≈ 50% IDSS
FREQ
(GHz)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
--- S11 ---
MAG
--- S21 ---
MAG
--- S12 ---
MAG
--- S22 ---
MAG
ANG
-158.7
-176.4
176.1
168.5
162.1
155.3
146.5
134.3
119.2
101.9
84.3
ANG
93.1
ANG
22.1
ANG
179.7
176.5
169.2
167.2
165.4
163.3
158.0
149.5
136.4
119.1
100.0
79.4
0.976
0.971
0.948
0.934
0.929
0.908
0.893
0.868
0.847
0.835
0.830
0.823
0.807
0.807
0.824
0.851
0.882
0.901
0.890
0.893
5.862
3.028
2.702
2.132
1.853
1.736
1.728
1.740
1.751
1.735
1.700
1.661
1.632
1.603
1.473
1.259
1.047
0.876
0.733
0.666
0.010
0.012
0.018
0.021
0.025
0.030
0.038
0.047
0.056
0.065
0.074
0.083
0.089
0.096
0.095
0.087
0.078
0.066
0.072
0.068
0.822
0.808
0.743
0.733
0.704
0.671
0.626
0.562
0.503
0.453
0.415
0.389
0.391
0.386
0.420
0.481
0.574
0.660
0.659
0.673
77.0
22.3
69.3
26.4
60.0
27.2
51.1
26.9
41.5
24.1
29.7
18.8
14.9
7.8
-2.0
-3.7
-20.3
-38.6
-57.7
-77.4
-100.2
-124.5
-147.7
-167.0
174.5
160.0
144.8
-17.5
-31.2
-46.7
-63.4
-81.6
-101.8
-119.4
-136.7
-146.5
-158.3
-177.5
65.8
46.7
59.1
21.5
35.4
-7.2
7.6
-33.9
-54.9
-74.3
-88.9
-104.2
-17.7
-36.3
-47.1
-54.7
-64.4
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised May 2006
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