EIA1819-1P [EXCELICS]
18.7-19.7GHz, 1W Internally Matched Power FET; 18.7-19.7GHz ， 1W内部匹配功率场效应管
| 型号： | EIA1819-1P |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | 18.7-19.7GHz, 1W Internally Matched Power FET |
| 文件： | 总1页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Excelics
EIA/EIB1819-1P
Not recommended for new designs. Contact factory. Effective 03/2003
18.7-19.7GHz, 1W Internally Matched Power FET
·
18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
·
·
·
EIA FEATURES HIGH PAE( 25% TYPICAL)
EIB FEATURES HIGH IP3(43dBm TYPICAL)
+30.0/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR
EIA/EIB
·
·
6.5/5.5dB TYPICAL G1dB POWER GAIN FOR EIA/EIB
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1819-1P
TYP
EIB1819-1P
TYP
SYMBOLS
PARAMETERS/TEST CONDITIONS
UNIT
dBm
dB
MIN
MAX
MIN
MAX
Output Power at 1dB Compression f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
29
30.0
29.0
29.5
P1dB
G1dB
PAE
Gain at 1dB Compression
f=18.7-19.7GHz
6.0
6.5
25
5.0
5.5
20
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Power Added Efficiency at 1dB compression
f=18.7-19.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
%
Drain Current at 1dB Compression
440
37
425
43*
mA
Id1dB
IP3
Output 3rd Order Intercept Point
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
f=18.7-19.7GHz
dBm
Saturated Drain Current Vds=3V, Vgs=0V
550
-13
720
760
-1.0
-15
16
850
-2.5
550
720
360
-2.0
-15
16
850
-3.5
mA
mS
V
Idss
Gm
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
Vds=3V, Ids=6mA
Vp
Drain Breakdown Voltage Igd=2.4mA
V
BVgd
Thermal Resistance (Au-Sn Eutectic Attach)
oC/W
Rth
*Typical –45dBc IM3 at Pout=20dBm/Tone
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Vgs
Ids
Drain-Source Voltage
Gate-Source Voltage
Drain Current
12V
-8V
8V
-3V
Idss
Idss
Igsf
Pin
Tch
Tstg
Pt
Forward Gate Current
Input Power
90mA
32dBm
175oC
-65/175oC
8.5W
15mA
@ 3dB Compression
150oC
-65/150oC
Channel Temperature
Storage Temperature
Total Power Dissipation
7.1W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com
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