EIB1011-4P [EXCELICS]

10.7-11.7GHz, 4W Internally Matched Power FET; 10.7-11.7GHz ， 4W内部匹配功率场效应管


型号：	EIB1011-4P
厂家：	EXCELICS SEMICONDUCTOR, INC.
描述：	10.7-11.7GHz, 4W Internally Matched Power FET 10.7-11.7GHz ， 4W内部匹配功率场效应管
文件：	总1页 (文件大小：46K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Excelics

EIA/EIB1011-4P

Not recommended for new designs. Contact factory. Effective 03/2003

10.7-11.7GHz, 4W Internally Matched Power FET

10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT

IMPEDANCE MATCHED TO 50 OHM

EIA FEATURES HIGH PAE( 30% TYPICAL)

EIB FEATURES HIGH IP3(49dBm TYPICAL)

+36.5/+35.5dBm TYPICAL P_1dBOUTPUT POWER FOR

EIA/EIB

9/8dB TYPICAL G_1dBPOWER GAIN FOR EIA/EIB

NON-HERMETIC METAL FLANGE PACKAGE

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

EIA1011-4P

TYP

EIB1011-4P

TYP

SYMBOLS

PARAMETERS/TEST CONDITIONS

UNIT

dBm

MIN

MAX

MIN

MAX

Output Power at 1dB Compression f=10.7-11.7GHz

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

35.5

36.5

35.5

P_1dB

G_1dB

PAE

Gain at 1dB Compression

f=10.7-11.7GHz

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

Power Added Efficiency at 1dB compression

f=10.7-11.7GHz

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

Drain Current at 1dB Compression

1760

1700

49*

Id_1dB

IP3

Output 3^rdOrder Intercept Point

Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)

f=10.7-11.7GHz

dBm

Saturated Drain Current Vds=3V, Vgs=0V

2200

-13

2880

3000

-1.0

-15

3400

-2.5

2200

2720

1400

-2.0

-15

3400

-3.5

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=24mA

Drain Breakdown Voltage Igd=9.6mA

BVgd

Thermal Resistance (Au-Sn Eutectic Attach)

4.5

^oC/W

Rth

*Typical –45dBc IM3 at Pout=26dBm/Tone

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

Drain-Source Voltage

Gate-Source Voltage

Drain Current

12V

-8V

-3V

Idss

3120mA

60mA

Igsf

Tch

Tstg

Forward Gate Current

Input Power

360mA

35dBm

175^oC

-65/175^oC

30W

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

25W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085

Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com

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