EMA109 [EXCELICS]
0.5 - 3.0 GHz High Linearity Power MMIC; 0.5 - 3.0 GHz高线性度MMIC功率
| 型号： | EMA109 |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | 0.5 - 3.0 GHz High Linearity Power MMIC |
| 文件： | 总3页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMA109
UPDATED 11/11/2004
0.5 – 3.0 GHz High Linearity Power MMIC
FEATURES
•
•
•
•
•
•
0.5 – 3.0 GHz BANDWIDTH
24.0dBm TYPICAL OUTPUT POWER
-45dBc OIMD3 @ 14dBm EACH TONE Pout
11.0 dB TYPICAL POWER GAIN
SINGLE BIAS SUPPLY
100% DC TESTED
Dimension: 760um X 700um
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
F
PARAMETER/TEST CONDITIONS1
MIN
0.5
TYP
MAX
UNITS
GHz
dBm
dB
Operating Frequency Range
3.0
Power at 1dB Compression
Small Signal Gain
VDD = 8.0V, F = 2.4G
VDD = 8.0V, F = 2.4G
P1dB
23.0
10.0
24.0
11.0
Gss
Output 3rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 14dBm
IMD3
-45
-42
dBc
VDD = 8.0V, F = 2.4G
RLIN
RLOUT
IDD
Input Return Loss
Output Return Loss
Drain Current
V
DD = 8.0V
DD = 8.0V
-12
-12
120
70
-8
-8
dB
dB
V
90
150
mA
RTH
Thermal Resistance1
oC/W
Note: 1. Overall Rth depends on die attach.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
VDD
CHARACTERISTIC
Power Supply Voltage
VALUE
8 V
-3 V
VGG
IDD
Gate Voltage
Drain Current
IDSS
IGSF
Forward Gate Current
Input Power
10 mA
PIN
@ 3dB compression
1.4 W
PT
Total Power Dissipation
Channel Temperature
Storage Temperature
TCH
150°C
TSTG
-65/+150°C
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –THS)/RTH; where THS = temperature of heatsink,
and PT = (VDD * IDD) – (POUT – PIN).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised November 2004
EMA109
UPDATED 11/11/2004
0.5 – 3.0 GHz High Linearity Power MMIC
Typical Performance:
1. P-1 VS VD
EMA109C P-1(dBm) VS VD
25
24
23
22
21
VD=5.5V
VD=6.5V
VD=8V
20
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
2. G-1 VS VD
EMA109C G-1(dB) VS VD
14
13
12
11
10
VD=5.5V
VD=6.5V
VD=8V
9
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 3
Revised November 2004
EMA109
UPDATED 11/11/2004
0.5 – 3.0 GHz High Linearity Power MMIC
Typical Performance:
3. OIP3 VS VD
EMA109C OIP3 VS VD
43
41
39
37
35
33
31
29
27
25
VD=8V
VD=6.5V
VD=5.5V
0
5
10
15
20
Each Tone Pout (dBm)
4. Small Signal Performance
EMA109C Small Signal Performance
20
15
10
5
0
-5
-10
-15
-20
-25
-30
DB(|S[1,1]|) *
DB(|S[2,1]|) *
DB(|S[2,2]|) *
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3
Frequency (GHz)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 3 of 3
Revised November 2004
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