EMP211 [EXCELICS]
9.5 - 12.0 GHz Power Amplifier MMIC; 9.5 - 12.0 GHz功率放大器MMIC
| 型号： | EMP211 |
| 厂家： | 
EXCELICS SEMICONDUCTOR, INC. |
| 描述： | 9.5 - 12.0 GHz Power Amplifier MMIC |
| 文件： | 总2页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMP211
UPDATED 06/19/2006
9.5 – 12.0 GHz Power Amplifier MMIC
FEATURES
•
•
•
•
9.5 – 12.0 GHz Operating Frequency Range
27.0dBm Output Power at 1dB Compression
17.0 dB Typical Small Signal Gain
-40dBc OIMD3 @Each Tone Pout 17dBm
APPLICATIONS
Dimension: 2500um X 1130um
Thickness: 75um ± 13um
•
•
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=380mA)
SYMBOL
F
PARAMETER/TEST CONDITIONS
Operating Frequency Range
MIN
9.5
TYP
MAX
UNITS
GHz
dBm
dB
12.0
P1dB
Gss
Output Power at 1dB Gain Compression
25.5
14.0
27.0
17.0
Small Signal Gain
Output 3rd Order Intermodulation Distortion
OIMD3
-40
-37
dBc
@∆f=10MHz, Each Tone Pout 17dBm
Input RL
Output RL
Idss
Input Return Loss
Output Return Loss
-10
-10
619
7
-7
-7
dB
dB
Saturate Drain Current
Power Supply Voltage
V
DS =3V, VGS =0V
460
-35
700
8
mA
VDD
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
Operating Base Plate Temperature
15
oC/W
ºC
Tb
+85
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS
VGS
IDD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
8 V
-4 V
Idss
IGSF
PIN
Forward Gate Current
Input Power
7.5mA
@ 3dB compression
150°C
TCH
TSTG
PT
Channel Temperature
Storage Temperature
Total Power Dissipation
-65/150°C
7.9W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised June 2006
EMP211
UPDATED 06/19/2006
9.5 – 12.0 GHz Power Amplifier MMIC
ASSEMBLY DRAWING
The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line and
separate the wires to minimize the mutual inductance.
CHIP OUTLINE
Chip Size 1130 x 2500 microns
Chip Thickness: 75 ± 13 microns
PAD Dimensions: 100 x 100 microns
All Dimensions in Microns
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 2
Revised June 2006
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