1N457A.T50R [FAIRCHILD]
Rectifier Diode, 1 Element, 0.2A, 70V V(RRM), Silicon, DO-35;
| 型号： | 1N457A.T50R |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Element, 0.2A, 70V V(RRM), Silicon, DO-35 |
| 文件： | 总1页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N457/A
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
IF(AV)
IFSM
Maximum Repetitive Reverse Voltage
70
V
Average Rectified Forward Current
200
mA
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
1.0
4.0
A
A
Pulse Width = 1.0 microsecond
Storage Temperature Range
-65 to +200
°C
Tstg
TJ
Operating Junction Temperature
175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Power Dissipation
Thermal Resistance, Junction to Ambient
500
300
mW
RθJA
C/W
°
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
VR
VF
Breakdown Voltage
70
V
IR = 100 µA
Forward Voltage
Reverse Current
Total Capacitance
IF = 20 mA
IF = 100 mA
VR = 60 V
VR = 60 V, TA = 150°C
VR = 0, f = 1.0 MHz
1.0
1.0
25
5
V
V
nA
µA
pF
1N457
1N457A
IR
CT
8.0
1N457
1N457/A, Rev. A
2002 Fairchild Semiconductor Corporation
相关型号：
©2020 ICPDF网 联系我们和版权申明