1N459AT50R [FAIRCHILD]
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,;
| 型号： | 1N459AT50R |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35, |
| 文件： | 总3页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N/FDLL 456/A - 1N/FDLL 459/A
COLOR BAND MARKING
DEVICE
1ST BAND 2ND BAND
FDLL456
BROWN
WHITE
WHITE
BLACK
BLACK
BROWN
BROWN
RED
FDLL456A BROWN
FDLL457 RED
FDLL457A RED
FDLL458 RED
FDLL458A RED
FDLL459 RED
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35
FDLL459A RED
RED
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
WIV
Working Inverse Voltage
25
60
125
175
200
V
V
V
V
mA
456/A
457/A
458/A
459/A
IO
Average Rectified Current
DC Forward Current
IF
500
600
mA
mA
Recurrent Peak Forward Current
if
Peak Forward Surge Current
Pulse width = 1.0 second
if(surge)
1.0
4.0
A
A
Pulse width = 1.0 microsecond
Storage Temperature Range
-65 to +200
C
°
Tstg
TJ
Operating Junction Temperature
175
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
1N / FDLL 456/A - 459/A
PD
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Ambient
500
3.33
300
mW
mW/ C
°
°
Rθ
C/W
°
JA
1997 Fairchild Semiconductor Corporation
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
BV
Breakdown Voltage
30
70
150
200
V
V
V
V
456/A
457/A
458/A
459/A
I = 100
A
µ
µ
µ
µ
R
I = 100
A
A
A
R
I = 100
R
I = 100
R
IR
Reverse Current
VR = 25 V
25
5.0
25
5.0
25
nA
A
µ
nA
A
µ
nA
A
µ
nA
456/A
457/A
458/A
459/A
V = 25 V, T = 150 C
°
R
A
VR = 60 V
V = 60 V, T = 150 C
°
R
A
VR = 125 V
5.0
25
V = 125 V, T = 150 C
°
R
A
VR = 175 V
5.0
V = 175 V, T = 150 C
A
µ
°
R
A
VF
Forward Voltage
IF = 40 mA
IF = 10 mA
IF = 7.0 mA
IF = 3.0 mA
IF = 100 mA
1.0
1.0
1.0
1.0
1.0
6.0
V
V
V
V
V
456
457
458
459
456/A-459/A
CO
Diode Capacitance
VR = 0, f = 1.0 MHz
pF
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E
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