1N5400 [FAIRCHILD]

3.0 Ampere General Purpose Rectifiers; 3.0安培通用整流器
1N5400
型号: 1N5400
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

3.0 Ampere General Purpose Rectifiers
3.0安培通用整流器

二极管
文件: 总2页 (文件大小:41K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Discr ete P OWER & Sign a l  
Tech n ologies  
1N5400 - 1N5408  
Features  
1.0 min (25.4)  
3.0 ampere operation at TA = 75°C  
with no thermal runaway.  
Dimensions in  
inches (mm)  
High current capability.  
Low leakage.  
0.375 (9.53)  
0.285 (7.24)  
DO-201AD  
COLOR BAND DENOTES CATHODE  
0.210 (5.33)  
0.190 (4.83)  
0.052 (1.32)  
0.048 (1.22)  
3.0 Ampere General Purpose Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
Average Rectified Current  
.375 " lead length @ TA = 75°C  
Peak Forward Surge Current  
8.3 ms single half-sine-wave  
Superimposed on rated load (JEDEC method)  
Total Device Dissipation  
3.0  
A
if(surge)  
200  
A
PD  
6.25  
50  
20  
W
mW/°C  
°C/W  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
RθJA  
Tstg  
TJ  
Storage Temperature Range  
-55 to +150  
-55 to +150  
°C  
°C  
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
5400 5401 5402 5403 5404 5405 5406 5407 5408  
Peak Repetitive Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
100  
1000  
DC Reverse Voltage  
Maximum Reverse Current  
@ rated VR TA = 25°C  
TA = 100°C  
(Rated VR)  
5.0  
500  
µA  
µA  
V
Maximum Forward Voltage @ 3.0 A  
1.2  
Maximum Full Load Reverse  
0.5  
30  
mA  
pF  
Current, Full Cycle  
Typical Junction Capacitance  
VR = 4.0 V, f = 1.0 MHz  
TA = 105°C  
ã 1998 Fairchild Semiconductor Corporation  
General Purpose Rectifiers  
(continued)  
Typical Characteristics  
Forward Current Derating Curve  
Forward Characteristics  
4
100  
3
10  
5
º
= 25 C  
T
J
9.5mm LEAD LENGTH  
Pulse Width = 200µS  
1% Duty Cycle  
2
1
0
1
0.1  
25  
50  
75  
100  
125  
150  
º
175  
200  
0.01  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
AMBIENT TEMPERATURE ( C)  
FORWARD VOLTAGE (V)  
Overload Surge Current  
Reverse Characteristics  
200  
160  
120  
80  
100  
10  
1
T
= 25 C  
º
A
º
= 105 C  
T
A
40  
0
0.1  
1
2
5
10  
20  
50  
100  
0
20  
40  
60  
80  
100  
120  
140  
NUMBER OF CYCLES AT 60Hz  
NORMALIZED REVERSE VOLTAGE (%)  
Junction Capacitance  
100  
50  
10  
5
1
0.1  
1
5
10  
50 100  
REVERSE VOLTAGE (V)  

相关型号:

1N5400(G)

暂无描述
LGE

1N5400-A

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon,
DIODES

1N5400-B

3.0A RECTIFIER
ONSEMI

1N5400-B

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon
FRONTIER

1N5400-BC01

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC

1N5400-BC01-BP

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC

1N5400-BC01-TP

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC

1N5400-BC02-BP

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC

1N5400-BC02-TP

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN
MCC

1N5400-BP

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC

1N5400-E3/100

DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY

1N5400-E3/4E

DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
VISHAY