2N3390 [FAIRCHILD]

NPN General Purpose Amplifier; NPN通用放大器
2N3390
型号: 2N3390
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

NPN General Purpose Amplifier
NPN通用放大器

晶体 放大器 晶体管 开关
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中文:  中文翻译
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Discr ete P OWER & Sign a l  
Tech n ologies  
2N3390  
2N3391  
2N3391A  
2N3392  
2N3393  
TO-92  
B
C
E
NPN General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 300 mA. Sourced  
from Process 10. See PN100A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
25  
25  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
-55 to +150  
C
TJ, T  
stg  
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N3390 / 3391/A / 3392 / 3393  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
°C/W  
1997 Fairchild Semiconductor Corporation  
3390-93, Rev B  
NPN General Purpose Amplifier  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
Collector-Emitter Breakdown  
Voltage*  
Collector-Base Breakdown Voltage  
IC = 10 mA, IB = 0  
C = 10 µA, IE = 0  
25  
V
V(BR)CBO  
V(BR)EBO  
ICBO  
25  
V
V
I
Emitter-Base Breakdown Voltage  
Collector-Cutoff Current  
5.0  
IE = 10 µA, IC = 0  
VCB = 18 V, IE = 0  
VEB = 5.0 V, IC = 0  
100  
100  
nA  
nA  
IEBO  
Emitter-Cutoff Current  
ON CHARACTERISTICS*  
hFE  
DC Current Gain  
VCE = 4.5 V, IC = 2.0 mA  
400  
250  
150  
90  
800  
500  
300  
180  
2N3390  
2N3391/A  
2N3392  
2N3393  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
VCB = 10 V, f = 1.0 MHz  
IC = 2.0 mA, VCE = 4.5 V,  
f = 1.0 kHz 2N3390  
2.0  
10  
pF  
dB  
Cob  
Small-Signal Current Gain  
hfe  
400  
250  
150  
90  
1250  
800  
500  
400  
2N3391/A  
2N3392  
2N3393  
NF  
Noise Figure  
V
CE = 4.5 V, IC = 100 µA,  
5.0  
RG = 500 , 2N3391A only  
BW = 15.7 kHz  
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%  

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