2N5457-S00Z [FAIRCHILD]
Transistor;型号: | 2N5457-S00Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Transistor |
文件: | 总5页 (文件大小:129K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMBF5457
MMBF5458
MMBF5459
2N5457
2N5458
2N5459
G
S
TO-92
G
S
SOT-23
Mark: 6D / 61S / 6L
NOTE: Source & Drain
are interchangeable
D
D
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
25
- 25
V
V
VGS
IGF
10
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5457-5459
*MMBF5457-5459
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
125
350
2.8
mW
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
N-Channel General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
- 25
V
IG = 10 µA, VDS = 0
IGSS
Gate Reverse Current
VGS = -15 V, VDS = 0
VGS = -15 V, VDS = 0, TA = 100°C
- 1.0
- 200
nA
nA
VGS(off)
Gate-Source Cutoff Voltage
- 0.5
- 1.0
- 2.0
- 6.0
- 7.0
- 8.0
V
V
V
V
DS = 15 V, ID = 10 nA
5457
5458
5459
VGS
Gate-Source Voltage
- 2.5
- 3.5
- 4.5
V
V
V
VDS = 15 V, ID = 100 µA 5457
DS = 15 V, ID = 200 µA 5458
VDS = 15 V, ID = 400 µA 5459
V
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
1.0
2.0
4.0
3.0
6.0
9.0
5.0
9.0
16
mA
mA
mA
VDS = 15 V, VGS = 0
5457
5458
5459
SMALL SIGNAL CHARACTERISTICS
Forward Transfer Conductance*
VDS = 15 V, VGS = 0, f = 1.0 kHz
gfs
1000
1500
2000
5000
5500
6000
5457
5458
5459
µmhos
µmhos
µmhos
Output Conductance*
Input Capacitance
VDS = 15 V, VGS = 0, f = 1.0 kHz
VDS = 15 V, VGS = 0, f = 1.0 MHz
VDS = 15 V, VGS = 0, f = 1.0 MHz
10
4.5
1.5
50
7.0
3.0
3.0
gos
µ
mhos
pF
pF
dB
Ciss
Crss
NF
Reverse Transfer Capacitance
Noise Figure
VDS = 15 V, VGS = 0, f = 1.0 kHz,
RG = 1.0 megohm, BW = 1.0 Hz
*Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%
5
Typical Characteristics
Transfer Characteristics
Transfer Characteristics
N-Channel General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Transfer Characteristics
Transfer Characteristics
Common Drain-Source
Parameter Interaction
Output Conductance vs.
Drain Current
Transconductance vs.
Drain Current
N-Channel General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Channel Resistance vs.
Temperature
Noise Voltage vs.
Frequency
Leakage Current vs. Voltage
Capacitance vs. Voltage
5
Power Dissipation vs
Ambient Temperature
700
600
500
400
300
200
100
0
TO-92
SOT-23
0
25
50
75
100
125
150
TEMPERATURE (oC)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
相关型号:
©2020 ICPDF网 联系我们和版权申明