2N5460D26Z [FAIRCHILD]

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN;
2N5460D26Z
型号: 2N5460D26Z
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN

文件: 总5页 (文件大小:114K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBF5460  
MMBF5461  
MMBF5462  
2N5460  
2N5461  
2N5462  
G
S
TO-92  
D
G
SOT-23  
Mark: 6E / 61U / 61V  
NOTE: Source & Drain  
are interchangeable  
S
D
P-Channel General Purpose Amplifier  
This device is designed primarily for low level audio and general  
purpose applications with high impedance signal sources. Sourced  
from Process 89.  
Absolute Maximum Ratings*  
TA= 25°C unless otherwise noted  
-
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
- 40  
40  
V
V
VGS  
IGF  
10  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ ,Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5460-5462  
*MMBF5460-5462  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
350  
2.8  
125  
225  
1.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
556  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
2N5460/5461/5462/MMBF5460/5461/5462, Rev A  
2001 Fairchild Semiconductor Corporation  
P-Channel General Purpose Amplifier  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min Typ Max Units  
OFF CHARACTERISTICS  
V(BR)GSS  
Gate-Source Breakdown Voltage  
40  
V
m
IG = 10 A, VDS = 0  
IGSS  
Gate Reverse Current  
VGS = 20 V, VDS = 0  
VGS = 20 V, VDS = 0, TA = 100 C  
5.0  
1.0  
nA  
m
A
°
VGS(off)  
Gate-Source Cutoff Voltage  
0.75  
1.0  
1.8  
6.0  
7.5  
9.0  
V
V
V
m
5460  
5461  
5462  
5460  
5461  
5462  
VDS = 15 V, ID = 1.0  
A
VGS  
Gate-Source Voltage  
0.5  
0.8  
1.5  
4.0  
4.5  
6.0  
V
V
V
VDS = 15 V, ID = 0.1 mA  
VDS = 15 V, ID = 0.2 mA  
VDS = 15 V, ID = 0.4 mA  
ON CHARACTERISTICS  
IDSS  
Zero-Gate Voltage Drain Current*  
5460  
5461  
5462  
- 1.0  
- 2.0  
- 4.0  
- 5.0  
- 9.0  
- 16  
mA  
mA  
mA  
VDS = 15 V, VGS = 0  
SMALL SIGNAL CHARACTERISTICS  
Forward Transfer Conductance  
VDS = 15 V, VGS = 0, f = 1.0 kHz  
5460 1000  
gfs  
4000  
5000  
6000  
m
mhos  
1500  
2000  
5461  
5462  
m
mhos  
m
mhos  
Output Conductance  
Input Capacitance  
VDS = 15 V, VGS = 0, f = 1.0 kHz  
75  
7.0  
2.0  
2.5  
m
mhos  
gos  
VDS = 15 V, VGS = 0, f = 1.0 MHz  
VDS = 15 V, VGS = 0, f = 1.0 MHz  
5.0  
1.0  
1.0  
pF  
Ciss  
Crss  
NF  
Reverse Transfer Capacitance  
Noise Figure  
pF  
VDS = 15 V, VGS = 0,  
RG = 1.0 megohm, f = 100 Hz,  
BW = 1.0 Hz  
dB  
Equivalent Short-Circuit Input  
Noise Voltage  
VDS = 15 V, VGS = 0, f = 100 Hz,  
BW = 1.0 Hz  
60  
115  
en  
nV/ÖHz  
5
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2%  
P-Channel General Purpose Amplifier  
(continued)  
Typical Characteristics (continued)  
Transfer Characteristics  
Transfer Charactersitics  
Common Drain-Source  
Parameter Interactions  
Channel Resistance vs.  
Temperature  
Leakage Current vs. Voltage  
P-Channel General Purpose Amplifier  
(continued)  
Typical Characteristics (continued)  
Transconductance vs.  
Drain Current  
Output Conductance vs.  
Drain Current  
Noise Voltage vs. Frequency  
Capacitance vs. Voltage  
5
Power Dissipation vs.  
Ambient Temperature  
350  
300  
250  
200  
150  
100  
50  
TO-92  
SOT-23  
0
0
25  
50  
75  
100  
125  
150  
TEMPERATURE (ºC)  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
OPTOPLANAR™  
PACMAN™  
POP™  
PowerTrench  
QFET™  
QS™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
FAST  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QT Optoelectronics™  
Quiet Series™  
SILENT SWITCHER  
SMART START™  
Stealth™  
UltraFET  
VCX™  
EcoSPARK™  
E2CMOSTM  
EnSignaTM  
FACT™  
FACT Quiet Series™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. H2  

相关型号:

2N5460D74Z

P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, TO-92, 3 PIN
FAIRCHILD

2N5460G

JFET Amplifier P−Channel − Depletion
ONSEMI

2N5460J05Z

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN
FAIRCHILD

2N5460J18Z

P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
TI

2N5460J18Z

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN
FAIRCHILD

2N5460L

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA,
VISHAY

2N5460L-18

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA,
VISHAY

2N5460LTA

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA,
VISHAY

2N5460R-STYLE-B

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO

2N5460R-STYLE-C

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO

2N5460R-STYLE-D

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO

2N5460RL

Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92
MOTOROLA