2N5460D26Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN;型号: | 2N5460D26Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN |
文件: | 总5页 (文件大小:114K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMBF5460
MMBF5461
MMBF5462
2N5460
2N5461
2N5462
G
S
TO-92
D
G
SOT-23
Mark: 6E / 61U / 61V
NOTE: Source & Drain
are interchangeable
S
D
P-Channel General Purpose Amplifier
This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources. Sourced
from Process 89.
Absolute Maximum Ratings*
TA= 25°C unless otherwise noted
-
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
- 40
40
V
V
VGS
IGF
10
mA
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ ,Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5460-5462
*MMBF5460-5462
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
350
2.8
125
225
1.8
mW
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2N5460/5461/5462/MMBF5460/5461/5462, Rev A
2001 Fairchild Semiconductor Corporation
P-Channel General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
40
V
m
IG = 10 A, VDS = 0
IGSS
Gate Reverse Current
VGS = 20 V, VDS = 0
VGS = 20 V, VDS = 0, TA = 100 C
5.0
1.0
nA
m
A
°
VGS(off)
Gate-Source Cutoff Voltage
0.75
1.0
1.8
6.0
7.5
9.0
V
V
V
m
5460
5461
5462
5460
5461
5462
VDS = 15 V, ID = 1.0
A
VGS
Gate-Source Voltage
0.5
0.8
1.5
4.0
4.5
6.0
V
V
V
VDS = 15 V, ID = 0.1 mA
VDS = 15 V, ID = 0.2 mA
VDS = 15 V, ID = 0.4 mA
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
5460
5461
5462
- 1.0
- 2.0
- 4.0
- 5.0
- 9.0
- 16
mA
mA
mA
VDS = 15 V, VGS = 0
SMALL SIGNAL CHARACTERISTICS
Forward Transfer Conductance
VDS = 15 V, VGS = 0, f = 1.0 kHz
5460 1000
gfs
4000
5000
6000
m
mhos
1500
2000
5461
5462
m
mhos
m
mhos
Output Conductance
Input Capacitance
VDS = 15 V, VGS = 0, f = 1.0 kHz
75
7.0
2.0
2.5
m
mhos
gos
VDS = 15 V, VGS = 0, f = 1.0 MHz
VDS = 15 V, VGS = 0, f = 1.0 MHz
5.0
1.0
1.0
pF
Ciss
Crss
NF
Reverse Transfer Capacitance
Noise Figure
pF
VDS = 15 V, VGS = 0,
RG = 1.0 megohm, f = 100 Hz,
BW = 1.0 Hz
dB
Equivalent Short-Circuit Input
Noise Voltage
VDS = 15 V, VGS = 0, f = 100 Hz,
BW = 1.0 Hz
60
115
en
nV/ÖHz
5
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2%
P-Channel General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Transfer Characteristics
Transfer Charactersitics
Common Drain-Source
Parameter Interactions
Channel Resistance vs.
Temperature
Leakage Current vs. Voltage
P-Channel General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Transconductance vs.
Drain Current
Output Conductance vs.
Drain Current
Noise Voltage vs. Frequency
Capacitance vs. Voltage
5
Power Dissipation vs.
Ambient Temperature
350
300
250
200
150
100
50
TO-92
SOT-23
0
0
25
50
75
100
125
150
TEMPERATURE (ºC)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Stealth™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H2
相关型号:
2N5460J05Z
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN
FAIRCHILD
2N5460J18Z
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92, TO-92, 3 PIN
FAIRCHILD
2N5460L
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA,
VISHAY
2N5460L-18
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA,
VISHAY
2N5460LTA
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA,
VISHAY
2N5460R-STYLE-B
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
2N5460R-STYLE-C
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
2N5460R-STYLE-D
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-226AA
ALLEGRO
2N5460RL
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-92
MOTOROLA
©2020 ICPDF网 联系我们和版权申明