2N5830 [FAIRCHILD]
NPN General Purpose Amplifier; NPN通用放大器
| 型号： | 2N5830 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN General Purpose Amplifier |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
2N5830
TO-92
C
B
E
NPN General Purpose Amplifier
This device is designed for general purpose high
voltage amplifiers and gas discharge display driving. Sourced
from Process 16. See 2N5551 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
100
120
V
V
Collector-Base Voltage
Emitter-Base Voltage
5.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
mA
°C
-55 to +150
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
2N5830
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
83.3
mW
mW/°C
°C/W
Rθ
JC
Thermal Resistance, Junction to Ambient
200
Rθ
°C/W
JA
1997 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0
100
120
5.0
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 100 V, IE = 0
50
25
50
nA
µA
nA
VCB = 100 V, IE = 0, TA = 100 °C
VEB = 4.0 V, IC = 0
IEBO
Emitter Cutoff Current
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 5.0 V, IC = 1.0 mA
60
80
80
V
CE = 5.0 V, IC = 10 mA
500
VCE = 5.0 V, IC = 50 mA
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
0.15
0.2
0.25
0.8
1.0
1.0
V
V
V
V
V
V
VCE(sat)
VBE(sat)
VBE(on)
VCE = 5.0 V, IC = 1.0 mA
0.8
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCB = 10 V, f = 1.0 MHz
4.0
5.0
pF
Ccb
hfe
Small-Signal Current Gain
IC = 10 mA, VCE = 10 V,
f = 100 MHz
IC = 1.0 mA, VCE = 10 V,
1.0
60
Input Impedance
6.0
40
KΩ
h
ie
Output Admittance
Small-Signal Current Gain
f = 1.0 kHz
µmho
hoe
hfe
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
相关型号：
2N5830-18FLEADFREE
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F, 3 PIN
CENTRAL
2N5830-18R
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R, 3 PIN
CENTRAL
2N5830-18RLEADFREE
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18R, 3 PIN
CENTRAL
2N5830-5T
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T, 3 PIN
CENTRAL
2N5830-5T1
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-5T1, 3 PIN
CENTRAL
2N5830APMLEADFREE
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
CENTRAL
2N5830APPLEADFREE
Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
CENTRAL
2N5830D26Z
Small Signal Bipolar Transistor, 0.2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
FAIRCHILD
2N5830D27Z
Small Signal Bipolar Transistor, 0.2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明