4N29SR2M [FAIRCHILD]
General Purpose 6-Pin Photodarlington Optocoupler; 通用6引脚光电复合光耦
| 型号： | 4N29SR2M |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | General Purpose 6-Pin Photodarlington Optocoupler |
| 文件： | 总10页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
September 2009
4N29M, 4N30M, 4N32M, 4N33M, H11B1M,TIL113M
General Purpose 6-Pin Photodarlington Optocoupler
Features
Description
■ High sensitivity to low input drive current
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and
TIL113M have a gallium arsenide infrared emitter
optically coupled to a silicon planar photodarlington.
■ Meets or exceeds all JEDEC Registered
Specifications
■ UL, C-UL approved, File #E90700, Volume 2
■ IEC 60747-5-2 approved (ordering option V)
Applications
■ Low power logic circuits
■ Telecommunications equipment
■ Portable electronics
■ Solid state relays
■ Interfacing coupling systems of different potentials
and impedances
Schematic
ANODE 1
6 BASE
6
6
1
CATHODE
N/C
COLLECTOR
2
3
5
4
1
6
EMITTER
1
©2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.3
Absolute Maximum Ratings (T = 25°C unless otherwise specified.)
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute
maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
-50 to +150
-40 to +100
260 for 10 sec
250
°C
°C
STG
T
OPR
T
Lead Solder Temperature (Wave)
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate above 25°C
3.3
EMITTER
I
Continuous Forward Current
Reverse Voltage
80
3
mA
V
F
V
R
I (pk)
Forward Current – Peak (300µs, 2% Duty Cycle)
3.0
150
2.0
A
F
P
LED Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate above 25°C
DETECTOR
BV
BV
BV
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
30
30
V
V
CEO
CBO
ECO
5
V
P
Detector Power Dissipation @ T = 25°C
150
2.0
150
mW
mW/°C
mA
D
A
Derate above 25°C
I
Continuous Collector Current
C
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
2
Electrical Characteristics (T = 25°C Unless otherwise specified.)
A
Individual Component Characteristics
Symbol
EMITTER
Parameter
Test Conditions
Device
Min.
Typ. Max. Unit
V
Input Forward Voltage*
I = 10mA
4NXXM
1.2
1.2
1.5
1.5
V
F
F
H11B1M,
TIL113M
0.8
I
Reverse Leakage Current*
Capacitance*
V
V
= 3.0V
= 6.0V
4NXXM
0.001
0.001
100
10
µA
R
R
R
H11B1M,
TIL113M
C
V = 0V, f = 1.0MHz
All
150
60
pF
V
F
DETECTOR
BV
Collector-Emitter Breakdown Voltage* I = 1.0mA, I = 0
4NXXM,
TIL113M
30
CEO
C
B
H11B1M
All
25
30
5.0
7
60
100
10
BV
BV
Collector-Base Breakdown Voltage*
I
= 100µA, I = 0
V
V
CBO
ECO
C
E
Emitter-Collector Breakdown Voltage* I = 100µA, I = 0
4NXXM
E
B
H11B1M,
TIL113M
10
I
Collector-Emitter Dark Current*
V
= 10V, Base Open
CE
All
1
100
nA
CEO
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.
Max.
Unit
DC CHARACTERISTICS
(1, 2)
I
Collector Output Current*
I = 10mA, V = 10V,
4N32M,
4N33M
50 (500)
mA (%)
C(CTR)
F
B
CE
I
= 0
4N29M, 10 (100)
4N30M
I = 1mA, V = 5V
H11B1M
5 (500)
F
CE
I = 10mA, V = 1V
TIL113M 30 (300)
4NXXM
F
CE
(2)
V
Saturation Voltage*
I = 8mA, I = 2.0mA
1.0
1.25
1.0
V
CE(SAT)
F
C
TIL113M
I = 1mA, I = 1mA
H11B1M
F
C
AC CHARACTERISTICS
t
Turn-on Time
I = 200mA, I = 50mA,
4NXXM,
TIL113M
5.0
µs
µs
on
F
C
V
= 10V, R = 100Ω
CC
L
I = 10mA, V = 10V,
H11B1M
25
F
CE
R = 100Ω
L
t
Turn-off Time
I = 200mA, I = 50mA,
4N32M,
4N33M,
TIL113M
100
40
off
F
C
V
= 10V, R = 100Ω
CC
L
4N29M,
4N30M
I = 10mA, V = 10V,
H11B1M
18
30
F
CE
R = 100Ω
L
(3, 4)
BW
kHz
Bandwidth
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
3
Electrical Characteristics (T = 25°C Unless otherwise specified.) (Continued)
A
Isolation Characteristics
Symbol
Characteristic
Test Conditions
f = 60Hz, t = 1 sec.
VDC
Device Min. Typ. Max.
Units
(5)
V
Input-Output Isolation Voltage
All
4N32M*
4N33M*
All
7500
2500
1500
V
PEAK
ISO
AC
V
VDC
(5)
11
R
C
Isolation Resistance
V
V
= 500VDC
10
Ω
ISO
ISO
I-O
I-O
(5)
Isolation Capacitance
= Ø, f = 1MHz
All
0.8
pF
* Indicates JEDEC registered data.
Notes:
1. The current transfer ratio(I /I ) is the ratio of the detector collector current to the LED input current.
C F
2. Pulse test: pulse width = 300µs, duty cycle ≤ 2.0% .
3. I adjusted to I = 2.0mA and I = 0.7mA rms.
F
C
C
4. The frequency at which I is 3dB down from the 1kHz value.
C
5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classification
I-IV
I-IV
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
CTI
175
V
Input to Output Test Voltage, Method b,
1594
V
V
PR
peak
V
x 1.875 = V , 100% Production Test
IORM
PR
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
1275
peak
V
x 1.5 = V , Type and Sample Test
PR
IORM
with tm = 60 sec, Partial Discharge < 5pC
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
V
850
6000
7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
Ω
External Clearance
7
Insulation Thickness
0.5
9
RIO
Insulation Resistance at Ts, V = 500V
10
IO
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
4
Typical Performance Curves
Fig. 2 Normalized CTR vs. Forward Current
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
T
= 5.0V
= 25°C
Normalized to
= 10 mA
CE
I
A
F
T
T
T
= -55°C
= 25°C
= 100°C
A
A
A
0
2
4
6
8
10
12
14
16
18
20
1
10
100
I
- LED FORWARD CURRENT (mA)
F
I - FORWARD CURRENT (mA)
F
Fig. 3 Normalized CTR vs. Ambient Temperature
Fig. 4 CTR vs. RBE (Unsaturated)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
= 20 mA
F
I
= 5 mA
F
I
= 10 mA
F
I
= 5 mA
F
I
= 10 mA
F
I
= 20 mA
F
V = 5.0 V
CE
Normalized to
= 10 mA
I
F
T
= 25°C
A
-60
-40
-20
0
20
40
60
80
100
10
100
1000
T
- AMBIENT TEMPERATURE (°C)
R
BE
- BASE RESISTANCE (kΩ)
A
Fig. 6 Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 5 CTR vs. RBE (Saturated)
100
10
1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
T
= 25˚C
A
V = 0.3 V
CE
I
= 20 mA
= 10 mA
F
I
= 2.5 mA
F
I
F
0.1
0.01
I
= 5 mA
F
I
= 20 mA
F
I
= 5 mA
F
I
= 10 mA
F
0.001
0.01
0.1
1
10
10
100
1000
I
- COLLECTOR CURRENT (mA)
R - BASE RESISTANCE (k Ω)
BE
C
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
5
Typical Performance Curves (Continued)
Fig. 7 Switching Speed vs. Load Resistor
Fig. 8 Normalized t vs. R
on BE
1000
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I
V
T
= 10 mA
F
V
CC =
10 V
= 10 V
CC
= 25°C
I
R
= 2 mA
= 100 Ω
C
L
A
100
10
1
T
off
T
f
T
on
T
r
0.1
0.1
1
10
100
10
100
R
1000
10000
100000
R-LOAD RESISTOR (kΩ)
- BASE RESISTANCE (k Ω)
BE
Fig. 10 Dark Current vs. Ambient Temperature
Fig. 9 Normalized t vs. R
off
BE
10000
1000
100
10
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
V
T
= 10 V
CE
A
= 25°
C
1
V
10 V
= 2 mA
= 100 Ω
CC =
I
C
L
0.1
R
0.01
0.001
0
20
40
60
80
100
10
100
1000
10000
100000
R - BASE RESISTANCE (k Ω)
BE
T
- AMBIENT TEMPERATURE (°C)
A
TEST CIRCUIT
WAVE FORMS
VCC = 10V
INPUT PULSE
IC
IF
RL
10%
90%
INPUT
OUTPUT
OUTPUT PULSE
RBE
tr
tf
toff
ton
I
I
Adjust
F
t
o
p
r
o
d
u
c
e
C
=
2
m
A
Figure 11. Switching Time Test Circuit and Waveforms
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
6
Package Dimensions
Through Hole
0.4" Lead Spacing
8.13–8.89
6
4
8.13–8.89
6
4
6.10–6.60
6.10–6.60
Pin 1
1
3
Pin 1
1
3
5.08 (Max.)
3.28–3.53
0.25–0.36
7.62 (Typ.)
5.08 (Max.)
3.28–3.53
0.25–0.36
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.38 (Min.)
2.54–3.81
2.54 (Bsc)
0.20–0.30
(0.86)
15° (Typ.)
(0.86)
0.41–0.51
0.76–1.14
0.20–0.30
10.16–10.80
1.02–1.78
0.41–0.51
0.76–1.14
1.02–1.78
Surface Mount
(1.78)
8.13–8.89
6
4
(1.52)
(2.54)
(7.49)
6.10–6.60
8.43–9.90
(10.54)
1
3
(0.76)
Pin 1
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.20–0.30
0.38 (Min.)
0.16–0.88
(8.13)
2.54 (Bsc)
(0.86)
0.41–0.51
0.76–1.14
1.02–1.78
Note:
All dimensions in mm.
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
7
Ordering Information
Suffix
Example
Option
No Suffix
4N32M
4N32SM
Standard Through Hole Device (50 units per tube)
Surface Mount Lead Bend
S
SR2
T
4N32SR2M
4N32TM
Surface Mount; Tape and Reel (1,000 units per reel)
0.4" Lead Spacing
V
4N32VM
VDE 0884
TV
4N32TVM
4N32SVM
4N32SR2VM
VDE 0884, 0.4" Lead Spacing
SV
SR2V
VDE 0884, Surface Mount
VDE 0884, Surface Mount, Tape & Reel (1,000 units per reel)
Marking Information
1
2
4N29
6
V X YY Q
5
3
4
Definitions
1
2
Fairchild logo
Device number
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
3
4
5
6
One digit year code, e.g., ‘7’
Two digit work week ranging from ‘01’ to ‘53’
Assembly package code
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
8
Tape Dimensions
12.0 ± 0.1
2.0 ± 0.05
4.5 ± 0.20
Ø1.5 MIN
1.75 ± 0.10
4.0 ± 0.1
0.30 ± 0.05
11.5 ± 1.0
24.0 ± 0.3
9.1 ± 0.20
21.0 ± 0.1
Ø1.5 ± 0.1/-0
10.1 ± 0.20
User Direction of Feed
0.1 MAX
Note:
All dimensions are in millimeters.
Reflow Soldering Profile
300
280
260
240
220
200
180
160
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
°C
140
120
100
80
60
40
20
0
1.822°C/Sec Ramp up rate
33 Sec
0
60
120
180
270
360
Time (s)
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
9
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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PowerXS™
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Current Transfer Logic™
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EfficentMax™
EZSWITCH™*
™*
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
Programmable Active Droop™
QFET®
TinyBoost™
TinyBuck™
QS™
Quiet Series™
RapidConfigure™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
SMART START™
SPM®
®
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
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FACT Quiet Series™
FACT®
UHC®
Ultra FRFET™
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VCX™
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OPTOPLANAR®
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®
FastvCore™
FETBench™
PDP SPM™
Power-SPM™
Sync-Lock™
FlashWriter®
®
*
*
FPS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
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SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
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under Sales Support.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
www.fairchildsemi.com
10
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