4N37TM [FAIRCHILD]

Transistor Output Optocoupler, 1-Element, 7500V Isolation, DIP-6;
4N37TM
型号: 4N37TM
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Transistor Output Optocoupler, 1-Element, 7500V Isolation, DIP-6

输出元件 光电
文件: 总9页 (文件大小:253K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
January 2009  
4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M,  
H11A1M, H11A2M, H11A3M, H11A4M, H11A5M  
General Purpose 6-Pin Phototransistor Optocouplers  
Features  
Description  
UL recognized (File # E90700, Volume 2)  
VDE recognized (File # 102497)  
– Add option V (e.g., 4N25VM)  
The general purpose optocouplers consist of a gallium  
arsenide infrared emitting diode driving a silicon pho-  
totransistor in a 6-pin dual in-line package.  
Applications  
Power supply regulators  
Digital logic inputs  
Microprocessor inputs  
Schematic  
Package Outlines  
1
6
5
4
2
3
NC  
PIN 1. ANODE  
2. CATHODE  
3. NO CONNECTION  
4. EMITTER  
5. COLLECTOR  
6. BASE  
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.2  
www.fairchildsemi.com  
Absolute Maximum Ratings (T = 25°C unless otherwise specified)  
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Symbol  
Parameter  
Value  
Units  
TOTAL DEVICE  
T
Storage Temperature  
Operating Temperature  
-40 to +150  
-40 to +100  
260 for 10 sec  
250  
°C  
°C  
STG  
T
OPR  
T
Wave solder temperature (see page 8 for reflow solder profile)  
°C  
SOL  
P
Total Device Power Dissipation @ T = 25°C  
mW  
D
A
Derate above 25°C  
2.94  
EMITTER  
I
DC/Average Forward Input Current  
Reverse Input Voltage  
60  
6
mA  
V
F
V
R
I (pk)  
Forward Current – Peak (300µs, 2% Duty Cycle)  
3
A
F
P
LED Power Dissipation @ T = 25°C  
120  
1.41  
mW  
mW/°C  
D
A
Derate above 25°C  
DETECTOR  
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Collector Voltage  
30  
70  
V
V
CEO  
CBO  
ECO  
7
V
P
Detector Power Dissipation @ T = 25°C  
150  
1.76  
mW  
mW/°C  
D
A
Derate above 25°C  
Electrical Characteristics (T = 25°C unless otherwise specified)  
A
Individual Component Characteristics  
Symbol  
EMITTER  
Parameter  
Test Conditions  
Min.  
Typ.* Max. Unit  
V
Input Forward Voltage  
I = 10mA  
1.18  
1.50  
10  
V
F
F
I
Reverse Leakage Current  
V = 6.0V  
0.001  
µA  
R
R
DETECTOR  
BV  
BV  
BV  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Collector Breakdown Voltage  
Collector-Emitter Dark Current  
Collector-Base Dark Current  
Capacitance  
I = 1.0mA, I = 0  
30  
70  
7
100  
120  
10  
V
V
CEO  
CBO  
ECO  
C
F
I = 100µA, I = 0  
C
F
I = 100µA, I = 0  
V
E
F
I
I
V
= 10V, I = 0  
1
50  
20  
nA  
nA  
pF  
CEO  
CBO  
CE  
CB  
CE  
F
V
V
= 10V  
C
= 0V, f = 1 MHz  
8
CE  
Isolation Characteristics  
Symbol Characteristic  
Test Conditions  
Min. Typ.* Max.  
Units  
V
R
C
Input-Output Isolation Voltage  
Isolation Resistance  
f = 60Hz, t = 1 sec  
7500  
Vac(pk)  
ISO  
ISO  
ISO  
11  
V
V
= 500 VDC  
10  
I-O  
I-O  
Isolation Capacitance  
= &, f = 1MHz  
0.2  
2
pF  
*Typical values at T = 25°C  
A
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.2  
www.fairchildsemi.com  
2
Electrical Characteristics (Continued) (T = 25°C unless otherwise specified)  
A
Transfer Characteristics  
Symbol  
Parameter  
Test Conditions  
Device  
Min. Typ.* Max. Unit  
DC CHARACTERISTICS  
CTR  
Current Transfer Ratio,  
Collector to Emitter  
I = 10mA, V = 10V  
4N35M, 4N36M,  
4N37M  
100  
%
F
CE  
H11A1M  
H11A5M  
50  
30  
20  
4N25M, 4N26M  
H11A2M, H11A3M  
4N27M, 4N28M  
H11A4M  
10  
40  
I = 10mA, V = 10V,  
4N35M, 4N36M,  
4N37M  
F
CE  
T = -55°C  
A
I = 10mA, V = 10V,  
4N35M, 4N36M,  
4N37M  
40  
F
CE  
T = +100°C  
A
V
Collector-Emitter  
Saturation Voltage  
I = 2mA, I = 50mA  
4N25M, 4N26M,  
4N27M, 4N28M,  
0.5  
0.3  
0.4  
V
CE (SAT)  
C
F
I = 0.5mA, I = 10mA  
4N35M, 4N36M,  
4N37M  
C
F
H11A1M, H11A2M,  
H11A3M, H11A4M,  
H11A5M  
AC CHARACTERISTICS  
T
Non-Saturated  
Turn-on Time  
I = 10mA, V = 10V,  
4N25M, 4N26M,  
4N27M, 4N28M,  
H11A1M, H11A2M,  
H11A3M, H11A4,  
H11A5M  
2
µs  
ON  
F
CC  
R = 100(Fig. 11)  
L
I = 2mA, V = 10V,  
4N35M, 4N36M,  
4N37M  
2
2
10  
10  
µs  
µs  
C
CC  
R = 100(Fig. 11)  
L
T
Turn-off Time  
I = 10mA, V = 10V,  
4N25M, 4N26M,  
4N27M, 4N28M,  
H11A1M, H11A2M,  
H11A3M, H11A4M,  
H11A5M  
OFF  
F
CC  
R = 100(Fig. 11)  
L
I = 2mA, V = 10V,  
4N35M, 4N36M,  
4N37M  
2
C
CC  
R = 100(Fig. 11)  
L
* Typical values at T = 25°C  
A
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.2  
www.fairchildsemi.com  
3
Typical Performance Curves  
Fig. 2 Normalized CTR vs. Forward Current  
Fig. 1 LED Forward Voltage vs. Forward Current  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
T
= 5.0V  
= 25°C  
Normalized to  
= 10 mA  
CE  
I
A
F
T
T
T
= -55°C  
= 25°C  
= 100°C  
A
A
A
1
10  
100  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
I
- LED FORWARD CURRENT (mA)  
I - FORWARD CURRENT (mA)  
F
F
Fig. 4 CTR vs. RBE (Unsaturated)  
Fig. 3 Normalized CTR vs. Ambient Temperature  
1.4  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
I
= 20 mA  
F
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
I
= 5 mA  
F
I
= 10 mA  
F
I
= 5 mA  
F
I
= 10 mA  
F
I
= 20 mA  
F
V
CE  
= 5.0 V  
Normalized to  
= 10 mA  
I
F
T
= 25°C  
A
-60  
-40  
-20  
0
20  
40  
60  
80  
100  
10  
100  
1000  
R
BE  
- BASE RESISTANCE (kΩ)  
T
- AMBIENT TEMPERATURE (°C)  
A
Fig. 6 Collector-Emitter Saturation Voltage  
vs. Collector Current  
Fig. 5 CTR vs. RBE (Saturated)  
100  
10  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
T
= 25˚C  
A
V
CE  
= 0.3 V  
I
= 20 mA  
F
1
I
= 10 mA  
F
I
= 2.5 mA  
F
0.1  
I
= 5 mA  
F
I
= 20 mA  
F
0.01  
I
= 10 mA  
I
= 5 mA  
F
F
0.001  
10  
100  
1000  
0.01  
0.1  
1
10  
R - BASE RESISTANCE (k Ω)  
BE  
I
- COLLECTOR CURRENT (mA)  
C
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.2  
www.fairchildsemi.com  
4
Typical Performance Curves (Continued)  
Fig. 8 Normalized t vs. R  
Fig. 7 Switching Speed vs. Load Resistor  
on  
BE  
1000  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
I
V
T
= 10 mA  
= 10 V  
F
V
I
R
10 V  
CC =  
= 2 mA  
CC  
= 25°C  
C
A
= 100 Ω  
L
100  
10  
1
T
off  
T
f
T
on  
T
r
0.1  
0.1  
1
10  
100  
10  
100  
R
1000  
10000  
100000  
R-LOAD RESISTOR (kΩ)  
- BASE RESISTANCE (k Ω)  
BE  
Fig. 10 Dark Current vs. Ambient Temperature  
Fig. 9 Normalized t vs. R  
off  
BE  
10000  
1000  
100  
10  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
V
= 10 V  
= 25°C  
CE  
T
A
1
V
I
R
10 V  
CC =  
= 2 mA  
C
0.1  
= 100 Ω  
L
0.01  
0.001  
0
20  
40  
60  
80  
100  
10  
100  
1000  
10000  
100000  
T
- AMBIENT TEMPERATURE (°C)  
A
R - BASE RESISTANCE (k Ω)  
BE  
TEST CIRCUIT  
WAVE FORMS  
VCC = 10V  
INPUT PULSE  
IC  
IF  
RL  
10%  
90%  
INPUT  
OUTPUT  
OUTPUT PULSE  
RBE  
tr  
tf  
toff  
ton  
IF  
IC  
Adjust to produce = 2 mA  
Figure 11. Switching Time Test Circuit and Waveforms  
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.2  
www.fairchildsemi.com  
5
Package Dimensions  
Through Hole  
0.4" Lead Spacing  
8.13–8.89  
6
4
8.13–8.89  
6
4
6.10–6.60  
6.10–6.60  
Pin 1  
1
3
Pin 1  
1
3
5.08 (Max.)  
3.28–3.53  
0.25–0.36  
7.62 (Typ.)  
5.08 (Max.)  
3.28–3.53  
0.25–0.36  
0.38 (Min.)  
2.54–3.81  
2.54 (Bsc)  
0.38 (Min.)  
2.54–3.81  
2.54 (Bsc)  
0.20–0.30  
(0.86)  
15° (Typ.)  
(0.86)  
0.41–0.51  
0.76–1.14  
0.20–0.30  
10.16–10.80  
1.02–1.78  
0.41–0.51  
0.76–1.14  
1.02–1.78  
Surface Mount  
(1.78)  
8.13–8.89  
6
4
(1.52)  
(2.54)  
(7.49)  
6.10–6.60  
8.43–9.90  
(10.54)  
1
3
(0.76)  
Pin 1  
Rcommended Pad Layout  
0.25–0.36  
3.28–3.53  
5.08  
(Max.)  
0.20–0.30  
0.38 (Min.)  
0.16–0.88  
(8.13)  
2.54 (Bsc)  
(0.86)  
0.41–0.51  
0.76–1.14  
1.02–1.78  
Note:  
All dimensions in mm.  
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.2  
www.fairchildsemi.com  
6
Ordering Information  
Order Entry Identifier  
(Example)  
Option  
Description  
No option  
4N25M  
4N25SM  
Standard Through Hole Device  
Surface Mount Lead Bend  
Surface Mount; Tape and Reel  
0.4" Lead Spacing  
S
SR2  
T
4N25SR2M  
4N25TM  
V
4N25VM  
VDE 0884  
TV  
4N25TVM  
4N25SVM  
4N25SR2VM  
VDE 0884, 0.4" Lead Spacing  
VDE 0884, Surface Mount  
VDE 0884, Surface Mount, Tape and Reel  
SV  
SR2V  
Marking Information  
1
2
4N25  
V X YY Q  
6
5
3
4
Definitions  
1
2
Fairchild logo  
Device number  
VDE mark (Note: Only appears on parts ordered with VDE  
option – See order entry table)  
3
4
5
6
One digit year code, e.g., ‘7’  
Two digit work week ranging from ‘01’ to ‘53’  
Assembly package code  
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are  
marked with date code ‘325’ or earlier are marked in portrait format.  
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.2  
www.fairchildsemi.com  
7
Carrier Tape Specification  
12.0 ± 0.1  
2.0 ± 0.05  
4.5 ± 0.20  
Ø1.5 MIN  
1.75 ± 0.10  
0.30 ± 0.05  
4.0 ± 0.1  
11.5 ± 1.0  
24.0 ± 0.3  
9.1 ± 0.20  
21.0 ± 0.1  
Ø1.5 ± 0.1/-0  
10.1 ± 0.20  
0.1 MAX  
User Direction of Feed  
Reflow Profile  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
260°C  
>245°C = 42 Sec  
Time above  
183°C = 90 Sec  
°C  
1.822°C/Sec Ramp up rate  
60  
40  
33 Sec  
20  
0
0
60  
120  
180  
270  
360  
Time (s)  
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.2  
www.fairchildsemi.com  
8
TRADEMARKS  
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not  
intended to be an exhaustive list of all such trademarks.  
FRFET®  
Build it Now  
CorePLUS™  
CorePOWER™  
CROSSVOLT™  
CTL™  
Programmable Active Droop™  
QFET®  
QS™  
Quiet Series™  
RapidConfigure™  
Global Power ResourceSM  
Green FPS™  
TinyBoost™  
TinyBuck™  
TinyLogic®  
TINYOPTO™  
TinyPower™  
TinyPWM™  
TinyWire™  
Green FPSe-Series™  
GTO™  
IntelliMAX™  
ISOPLANAR™  
MegaBuck™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MillerDrive™  
MotionMax™  
Current Transfer Logic™  
EcoSPARK®  
EfficentMax™  
EZSWITCH™ *  
Saving our world, 1mW/W/kW at a time™  
SmartMax™  
SMART START™  
TriFault Detect™  
µSerDes™  
SPM®  
®
STEALTH™  
SuperFET™  
SuperSOT-3  
SuperSOT-6  
SuperSOT-8  
SupreMOS™  
Fairchild®  
Motion-SPM™  
UHC®  
Ultra FRFET™  
UniFET™  
VCX™  
VisualMax™  
XS™  
Fairchild Semiconductor®  
FACT Quiet Series™  
FACT®  
OPTOLOGIC®  
OPTOPLANAR®  
®
FAST®  
SyncFET™  
FastvCore™  
FlashWriter® *  
FPS™  
®
PDP SPM™  
Power-SPM™  
PowerTrench®  
PowerXS™  
The Power Franchise®  
F-PFS™  
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR  
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE  
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDíS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,  
WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILDíS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE  
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are  
intended for surgical implant into the body or (b) support or sustain life,  
and (c) whose failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be reasonably  
expected to result in a significant injury of the user.  
2. A critical component in any component of a life support, device, or  
system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
ANTI-COUNTERFEITING POLICY  
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,  
under Sales Support.  
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.  
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,  
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of  
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are  
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have  
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.  
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide  
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our  
customers to do their part in stopping this practice by buying direct or from authorized distributors.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification Product Status  
Definition  
Datasheet contains the design specifications for product development. Specifications may change in  
any manner without notice.  
Advance Information  
Preliminary  
Formative / In Design  
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  
Semiconductor reserves the right to make changes at any time without notice to improve design.  
First Production  
Full Production  
Not In Production  
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes  
at any time without notice to improve the design.  
No Identification Needed  
Obsolete  
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.  
The datasheet is for reference information only.  
Rev. I38  
©2005 Fairchild Semiconductor Corporation  
4NXXM, H11AXM Rev. 1.0.2  
www.fairchildsemi.com  
9

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